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公开(公告)号：US09269867B2
公开(公告)日：2016-02-23
申请号：US14076626
申请日：2013-11-11
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Ye Seul Kim , Shin Hyoung Kim , Kyoung Wan Kim , Yeo Jin Yoon , Jun Woong Lee , Tae Gyun Kim
CPC classification number: H01L33/32 , H01L33/14 , H01L33/22 , H01L33/382 , H01L2933/0016
Abstract: A light-emitting device according to an exemplary embodiment of the present invention includes a first conductivity-type semiconductor layer disposed on a substrate; an active layer disposed on the first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer disposed on the active layer; and an irregular convex-concave pattern disposed on a surface of the first conductivity-type semiconductor layer. The irregular convex-concave pattern includes convex portions and concave portions, and the convex portions have irregular heights and the concave portions have irregular depths. The first conductivity-type semiconductor layer including the irregular convex-concave pattern is exposed from the active layer and the second conductivity-type semiconductor layer.
Abstract translation: 根据本发明的示例性实施例的发光器件包括设置在基板上的第一导电型半导体层; 设置在所述第一导电型半导体层上的有源层; 设置在有源层上的第二导电型半导体层; 以及设置在第一导电型半导体层的表面上的不规则的凸凹图案。 不规则的凸凹图案包括凸部和凹部，凸部具有不规则的高度，凹部具有不规则的深度。 包含不规则凸凹图案的第一导电型半导体层从有源层和第二导电型半导体层露出。
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公开(公告)号：US09960318B2
公开(公告)日：2018-05-01
申请号：US15288043
申请日：2016-10-07
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Gyun Kim , Joon Hee Lee , Ki Hyun Kim , Sung Su Son
CPC classification number: H01L33/145 , H01L33/10 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/44 , H01L33/46 , H01L2933/0016
Abstract: A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers, an active layer, a first electrode electrically connected to the first conductive type semiconductor layer, a current blocking layer disposed on a lower surface of the light emitting structure, and a second electrode electrically connected to the second conductive type semiconductor layer. The second electrode includes a first reflective metal layer adjoining the second conductive type semiconductor layer, and a second reflective metal layer covering a lower surface of the current blocking layer and a lower surface of the first reflective metal layer, and adjoining the second conductive type semiconductor layer. A contact resistance between the second reflective metal layer and the second conductive type semiconductor layer is higher than a contact resistance between the first reflective metal layer and the second conductive type semiconductor layer.
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公开(公告)号：US20140131731A1
公开(公告)日：2014-05-15
申请号：US14076626
申请日：2013-11-11
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul KIM , Shin Hyoung Kim , Kyoung Wan Kim , Yeo Jin Yoon , Jun Woong Lee , Tae Gyun Kim
IPC: H01L33/32
CPC classification number: H01L33/32 , H01L33/14 , H01L33/22 , H01L33/382 , H01L2933/0016
Abstract: A light-emitting device according to an exemplary embodiment of the present invention includes a first conductivity-type semiconductor layer disposed on a substrate; an active layer disposed on the first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer disposed on the active layer; and an irregular convex-concave pattern disposed on a surface of the first conductivity-type semiconductor layer. The irregular convex-concave pattern includes convex portions and concave portions, and the convex portions have irregular heights and the concave portions have irregular depths. The first conductivity-type semiconductor layer including the irregular convex-concave pattern is exposed from the active layer and the second conductivity-type semiconductor layer.
Abstract translation: 根据本发明的示例性实施例的发光器件包括设置在基板上的第一导电型半导体层; 设置在所述第一导电型半导体层上的有源层; 设置在有源层上的第二导电型半导体层; 以及设置在第一导电型半导体层的表面上的不规则的凸凹图案。 不规则的凸凹图案包括凸部和凹部，凸部具有不规则的高度，凹部具有不规则的深度。 包含不规则凸凹图案的第一导电型半导体层从有源层和第二导电型半导体层露出。
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公开(公告)号：US09450153B2
公开(公告)日：2016-09-20
申请号：US14949554
申请日：2015-11-23
Applicant: Seoul Viosys Co., Ltd.
Inventor： Hyoung Jin Lim , Chan Seob Shin , Kyu Ho Lee , Tae Gyun Kim , Sung Won Tae
CPC classification number: H01L33/38 , H01L33/22 , H01L33/42 , H01L2933/0016 , H01L2933/0091
Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.
Abstract translation: 本文公开了包括多个包括氧化锌的突起的发光二极管及其制造方法。 根据本公开的示例性实施例，发光二极管包括：基板; 设置在所述基板上的氮化物发光结构; 以及设置在所述氮化物发光结构上的透明电极层，其中所述透明电极层包括多个突起，所述多个突起各自具有下部和上部，所述下部的一侧和 上部具有不同的梯度。
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5.发明申请LIGHT-EMITTING DIODE HAVING IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHOD FOR MANUFACTURING SAME 审中-公开具有改进的光提取效率的发光二极管及其制造方法公开(公告)号：US20150014702A1
公开(公告)日：2015-01-15
申请号：US14383470
申请日：2013-02-26
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jin Woong Lee , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh , Tae Gyun Kim
CPC classification number: H01L33/22 , H01L33/0075 , H01L33/20 , H01L33/32 , H01L2933/0058
Abstract: Disclosed are a light-emitting diode having improved light extraction efficiency and a method for manufacturing same. This light-emitting diode includes: a gallium nitride substrate having an upper surface and a lower surface; and a gallium nitride semiconductor multilayer structure disposed on the lower surface of the substrate, and having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. Herein, the gallium nitride substrate has a main pattern having a protruding portion and a concave portion on the upper surface, and a rough surface formed on the protruding portion of the main pattern. The light-emitting diode is capable of improving light extraction efficiency through the upper surface thereof since the rough surface is formed along with the main pattern on the upper surface of the gallium nitride substrate.
Abstract translation: 公开了一种具有改进的光提取效率的发光二极管及其制造方法。 该发光二极管包括：具有上表面和下表面的氮化镓衬底; 以及设置在所述基板的下表面上并具有第一导电半导体层，有源层和第二导电半导体层的氮化镓半导体多层结构。 这里，氮化镓衬底具有在上表面上具有突出部分和凹入部分的主图案，以及形成在主图案的突出部分上的粗糙表面。 发光二极管能够通过其上表面提高光提取效率，因为粗糙表面与氮化镓衬底的上表面上的主图案一起形成。
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Patent Agency Ranking
公开(公告)号：US12237440B2
公开(公告)日：2025-02-25
申请号：US18584432
申请日：2024-02-22
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Tae Gyun Kim , Kyu Ho Lee
Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.
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公开(公告)号：US20170005231A1
公开(公告)日：2017-01-05
申请号：US15264420
申请日：2016-09-13
Applicant: Seoul Viosys Co., Ltd.
Inventor： Hyoung Jin Lim , Chan Seob Shin , Kyu Ho Lee , Tae Gyun Kim , Sung Won Tae
CPC classification number: H01L33/38 , H01L33/22 , H01L33/42 , H01L2933/0016 , H01L2933/0091
Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.
Abstract translation: 本文公开了包括多个包括氧化锌的突起的发光二极管及其制造方法。 根据本公开的示例性实施例，发光二极管包括：基板; 设置在所述基板上的氮化物发光结构; 以及设置在所述氮化物发光结构上的透明电极层，其中所述透明电极层包括多个突起，所述多个突起各自具有下部和上部，所述下部的一侧和 上部具有不同的梯度。
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公开(公告)号：US11942573B2
公开(公告)日：2024-03-26
申请号：US17344691
申请日：2021-06-10
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Tae Gyun Kim , Kyu Ho Lee
CPC classification number: H01L33/382 , H01L33/46 , H01L33/62
Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.
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公开(公告)号：US09761762B2
公开(公告)日：2017-09-12
申请号：US15264420
申请日：2016-09-13
Applicant: Seoul Viosys Co., Ltd.
Inventor： Hyoung Jin Lim , Chan Seob Shin , Kyu Ho Lee , Tae Gyun Kim , Sung Won Tae
CPC classification number: H01L33/38 , H01L33/22 , H01L33/42 , H01L2933/0016 , H01L2933/0091
Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.
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公开(公告)号：US20160087158A1
公开(公告)日：2016-03-24
申请号：US14949554
申请日：2015-11-23
Applicant: Seoul Viosys Co., Ltd.
Inventor： Hyoung Jin Lim , Chan Seob Shin , Kyu Ho Lee , Tae Gyun Kim , Sung Won Tae
CPC classification number: H01L33/38 , H01L33/22 , H01L33/42 , H01L2933/0016 , H01L2933/0091
Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.
Abstract translation: 本文公开了包括多个包括氧化锌的突起的发光二极管及其制造方法。 根据本公开的示例性实施例，发光二极管包括：基板; 设置在所述基板上的氮化物发光结构; 以及设置在所述氮化物发光结构上的透明电极层，其中所述透明电极层包括多个突起，所述多个突起各自具有下部和上部，所述下部的一侧和 上部具有不同的梯度。
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