Abstract:
Provided are an X-ray imaging panel capable of suppressing a leak current of a photoelectric conversion layer while reducing the number of steps for manufacturing the imaging panel, and a method for manufacturing the same. An imaging panel 1 generates an image based on scintillation light obtained from X-rays passing through a subject. The imaging panel 1 is provided with a thin film transistor 13, passivation films 103 and 104 covering the thin film transistor 13, a photoelectric conversion layer 15 converting scintillation light into a charge, an upper electrode 16, and a lower electrode 14 connected to the thin film transistor 13, on a substrate 101. End portions of the lower electrode 14 are disposed on an inner side than the end portions of the photoelectric conversion layer 15. The lower electrode 14 and the thin film transistor 13 are connected to each other via a contact hole CH1 formed in the passivation films 103 and 104, in a region in which the photoelectric conversion layer 15 is provided.
Abstract:
A scanned antenna (1000) is a scanned antenna including antenna elements (U) arranged together, the scanned antenna including: a TFT substrate (101) including a first dielectric substrate (1), TFTs, gate bus lines, source bus lines, and patch electrodes (15); a slot substrate (201) including a second dielectric substrate (51) a slot electrode (55); a liquid crystal layer (LC) provided between the TFT substrate and the slot substrate; and a reflective conductive plate (65). The slot electrode includes slots (57) arranged so as to correspond to the patch electrodes. As seen from the normal direction to the first dielectric substrate, a plurality of spacer structures (75) provided between the TFT substrate and the slot substrate are arranged so as not to overlap with first regions (Rp1) and/or second regions (Rp2), where the first regions are regions that are within a distance of 0.3 mm from edges of the slots and the second regions are regions that are within a distance of 0.3 mm from edges of the patch electrodes.
Abstract:
A method includes steps of (a) forming a substrate layer 10 above a support substrate 8 which is transparent, and then a thin-film element above the substrate layer 10; and (b) emitting laser beams La and Lb to a face of the support substrate 8 opposite to another face of the support substrate to which the substrate layer 10 and the thin-film element are formed, and delaminating the substrate layer 10 and the thin-film element from the support substrate 8. In step (b), the laser beams La and Lb are emitted from different directions.
Abstract:
A scanning antenna includes a TFT substrate including a plurality of TFTs supported by a first dielectric substrate and a plurality of patch electrodes, a slot substrate including a slot electrode supported by a second dielectric substrate, a liquid crystal layer provided between the TFT substrate and the slot substrate, and a reflective conductive plate disposed opposing the second dielectric substrate across a dielectric layer. The slot electrode includes a plurality of slots disposed corresponding to the plurality of patch electrodes, each patch electrode is connected to a drain of the corresponding TFT, the slot electrode includes Cu layers, and lower metal layers and/or an upper metal layer, and the lower metal layer and/or the upper metal layer decrease about a half or more of a tensile stress of the Cu layer.
Abstract:
An imaging device according to an embodiment of the present invention includes a photoelectric conversion part that converts incident light into electric charge, and a detection part that detects the electric charge generated in the photoelectric conversion part. The photoelectric conversion part includes a plurality of photodiodes arranged in a matrix, and the detection part includes a plurality of thin film transistors provided corresponding to the plurality of photodiodes and arranged in a matrix. Each of the photodiodes includes a lower electrode, a semiconductor layer, and an upper electrode, and an insulating layer is provided between at least a portion of the lower electrode in the thickness direction and the semiconductor layer in the peripheral portion of the semiconductor layer. An end of the insulating layer has a tapered shape having an acute angle between the lower surface and the side surface of the insulating layer.
Abstract:
An imaging panel includes an imaging element that is formed on a substrate. The imaging element includes a gate line, a source line, a switching element, a photoelectric conversion element, and a bias line. The gate line and the source line are formed in a layer in which a part of the switching element is formed, a layer in which a part of the photoelectric conversion element is formed, or a layer in which the bias line is formed.
Abstract:
In an organic EL display device (electroluminescent device) including an organic EL element (electroluminescent element), a first sealing film covers the organic El element, a second sealing film is formed on the first sealing film, and a third sealing film covers the first sealing film and the second sealing film.