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公开(公告)号：US20240321576A1
公开(公告)日：2024-09-26
申请号：US18579934
申请日：2022-07-19
发明人： Kazunori HAGIMOTO , Ippei KUBONO
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L29/2003
摘要： A nitride semiconductor substrate including: a composite substrate with multiple layers stacked, a silicon oxide layer or a TEOS layer having a central flat surface and a side surface around the flat surface and stacked on the composite substrate; a single crystal silicon layer stacked on the silicon oxide layer or the TEOS layer, and a nitride semiconductor thin film deposited on the single crystal silicon layer, wherein the entire central flat surface of the silicon oxide layer or the TEOS layer is covered with the single crystal silicon layer.
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公开(公告)号：US20240162041A1
公开(公告)日：2024-05-16
申请号：US18284615
申请日：2022-03-16
IPC分类号： H01L21/263 , H01L21/02
CPC分类号： H01L21/263 , H01L21/02658 , H01L21/02381 , H01L21/02458 , H01L21/0254
摘要： A method for producing a nitride semiconductor wafer by forming a nitride semiconductor film on a silicon single-crystal substrate, including the steps of forming the nitride semiconductor film on the silicon single-crystal substrate and irradiating the silicon single-crystal substrate with electron beams with an irradiation dose of 1×1014/cm2 or more. A method produces a nitride semiconductor wafer in which a nitride semiconductor film is formed on a silicon single-crystal substrate, and in which a loss and a second harmonic characteristic due to the substrate are improved.
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公开(公告)号：US20230279581A1
公开(公告)日：2023-09-07
申请号：US18020032
申请日：2021-04-08
CPC分类号： C30B25/18 , C30B29/403 , H01L29/2003 , H01L21/02381 , H01L21/0254
摘要： A method for producing a nitride semiconductor wafer, in which a nitride semiconductor thin film is grown on a silicon single crystal substrate by vapor phase growth, includes, by using a silicon single crystal substrate having a resistivity of 1000 Ω·cm or more, an oxygen concentration of less than 1×1017 atoms/cm3 and a thickness of 1000 μm or more, growing the nitride semiconductor thin film on the silicon single crystal substrate by vapor phase growth. As a result, a method produces a nitride semiconductor wafer in which plastic deformation and warpage are suppressed even in the case of a high-resistivity, ultra-low oxygen concentration silicon single crystal substrate, which is promising as a support substrate for high frequency devices.
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4.发明申请公开(公告)号：US20170323960A1
公开(公告)日：2017-11-09
申请号：US15525153
申请日：2015-11-06
发明人： Ken SATO , Hiroshi SHIKAUCHI , Hirokazu GOTO , Masaru SHINOMIYA , Keitaro TSUCHIYA , Kazunori HAGIMOTO
CPC分类号： H01L29/778 , C30B25/183 , C30B25/22 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/1075 , H01L29/2003 , H01L29/7786
摘要： An epitaxial wafer including: a silicon-based substrate; a first buffer layer on the substrate and including a first multilayer structure buffer region composed of AlxGa1-xN layers and AlyGa1-yN layers (x>y) alternately disposed and a first insertion layer composed of an AlzGa1-zN layer (x>z) and is thicker than the AlyGa1-yN layer, the first regions and insertion layers alternately disposed; a second buffer layer on the first and including a second multilayer structure buffer region composed of AlαGa1-αN layers and AlβGa1-βN layers (α>β) alternately disposed and a second insertion layer composed of an AlγGa1-γN layer (α>γ) and is thicker than the AlβGa1-βN layer, the second regions and insertion layers alternately disposed; and a channel layer on the second buffer layer and thicker than the second insertion layer. The average Al composition in the second buffer layer is higher than that in the first.
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公开(公告)号：US20240355620A1
公开(公告)日：2024-10-24
申请号：US18713455
申请日：2022-10-25
IPC分类号： H01L21/02 , H01L29/20 , H01L29/786
CPC分类号： H01L21/02389 , H01L21/0242 , H01L21/0262 , H01L29/2003 , H01L29/7869
摘要： A nitride semiconductor substrate includes: a silicon single-crystal substrate; and a nitride semiconductor thin film formed on the silicon single-crystal substrate, wherein the silicon single-crystal substrate has a carbon concentration of 5E16 atoms/cm3 or more and 2E17 atoms/cm3 or less. This provides a nitride semiconductor substrate resistant against plastic deformation and a manufacturing method therefor.
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公开(公告)号：US20240297224A1
公开(公告)日：2024-09-05
申请号：US18272621
申请日：2022-01-17
IPC分类号： H01L29/20 , H01L21/02 , H01L29/205
CPC分类号： H01L29/2003 , H01L21/0254 , H01L29/205
摘要： A nitride semiconductor substrate, including a Ga-containing nitride semiconductor thin film formed on a substrate for film-forming in which a single crystal silicon layer is formed on a composite substrate in which a plurality of layers is bonded, wherein the nitride semiconductor substrate has a region where the Ga-containing nitride semiconductor thin film is not formed inward from an edge of the single crystal silicon layer being a growth surface of the nitride semiconductor thin film. This provides: a nitride semiconductor substrate with inhibited generation of a reaction mark; and a manufacturing method therefor.
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公开(公告)号：US20220367188A1
公开(公告)日：2022-11-17
申请号：US17628390
申请日：2020-07-02
发明人： Kazunori HAGIMOTO , Shouzaburo GOTO
IPC分类号： H01L21/18 , H01L21/02 , H01L21/762 , C30B29/06 , H01L23/00
摘要： The present invention is a substrate for an electronic device, including a nitride semiconductor film formed on a joined substrate including a silicon single crystal, where the joined substrate has at least a bond wafer including a silicon single crystal joined on a base wafer including a silicon single crystal, the base wafer includes CZ silicon having a resistivity of 0.1 Ωcm or lower and a crystal orientation of , and the bond wafer has a crystal orientation of . This provides a substrate for an electronic device, having a suppressed warp.
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公开(公告)号：US20180269316A1
公开(公告)日：2018-09-20
申请号：US15760579
申请日：2016-08-29
IPC分类号： H01L29/778 , H01L29/20 , H01L21/02 , H01L29/66 , H01L29/36
CPC分类号： H01L29/7787 , H01L21/0254 , H01L29/2003 , H01L29/36 , H01L29/66431 , H01L29/66462 , H01L29/7786
摘要： A semiconductor base substance includes: a substrate; a buffer layer which is made of a nitride semiconductor and provided on the substrate; and a channel layer which is made of a nitride semiconductor and provided on the buffer layer, wherein the buffer layer includes: a first region which is provided on the substrate side and has boron concentration higher than acceptor element concentration; and a second region which is provided on the first region, and has boron concentration lower than that in the first region and acceptor element concentration higher than that in the first region. As a result, the semiconductor base substance which can obtain a high pit suppression effect while maintaining a high longitudinal breakdown voltage is provided.
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9.发明申请公开(公告)号：US20170236711A1
公开(公告)日：2017-08-17
申请号：US15585518
申请日：2017-05-03
发明人： Hiroshi SHIKAUCHI , Ken SATO , Hirokazu GOTO , Masaru SHINOMIYA , Keitaro TSUCHIYA , Kazunori HAGIMOTO
CPC分类号： H01L21/02658 , C30B23/025 , C30B25/18 , C30B25/186 , C30B29/06 , C30B29/403 , H01L21/02381 , H01L21/0245 , H01L21/0254 , H01L21/0259 , H01L21/02595 , H01L21/02598 , H01L21/2251 , H01L21/2258 , H01L29/36 , H01L29/66462 , H01L29/7786
摘要： A silicon-based substrate on which a nitride compound semiconductor layer is formed on a front surface thereof, including a first portion provided on the front surface side which has a first impurity concentration and a second portion provided on an inner side of the first portion which has a second impurity concentration higher than the first impurity concentration, wherein the first impurity concentration being 1×1014 atoms/cm3 or more and less than 1×1019 atoms/cm3. Consequently, there is provided the silicon-based substrate in which the crystallinity of the nitride compound semiconductor layer formed on an upper side thereof can be maintained excellently while improving a warpage of the substrate.
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10.发明公开公开(公告)号：US20240274452A1
公开(公告)日：2024-08-15
申请号：US18567262
申请日：2022-05-30
发明人： Kazunori HAGIMOTO , Shouzaburo GOTO
IPC分类号： H01L21/67 , H01L21/02 , H01L21/268 , H01L21/66
CPC分类号： H01L21/67282 , H01L21/0254 , H01L21/268 , H01L22/22
摘要： A wafer marking method uses a laser for performing a laser marking on a defect region of a nitride semiconductor substrate in which a nitride semiconductor layer contains at least a GaN layer formed by epitaxial growth on a single-crystal silicon substrate. The method includes that a surface of the GaN layer and a surface of the single-crystal silicon substrate are performed laser marking simultaneously by irradiating the defect region with a laser of a wavelength within ±10% of 365 nm, having a wavelength corresponding to a band gap energy of GaN.
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