公开(公告)号：US3746496A

公开(公告)日：1973-07-17

申请号：US3746496D

申请日：1971-02-08

Applicant: SIEMENS AG

Inventor： DIETZE W ,  REUSCHEL K ,  SANDMANN H

IPC: C23C16/44 ,  C23C16/01 ,  C23C16/22 ,  C30B25/00 ,  C30B25/02 ,  C30B29/08 ,  C30B29/60 ,  C30B35/00 ,  H01L21/22 ,  C23C13/08 ,  B29C13/00

CPC classification number: C30B29/06 ,  C23C16/01 ,  C23C16/22 ,  C30B25/00 ,  C30B25/02 ,  C30B29/60

Abstract: A device for producing tubular bodies of semiconductor material, preferably of silicon or germanium. To this end, a rod or tube shaped carrier is heated in a reaction gas for precipitating the respective semiconductor, as a result of which the jacket area of the carrier is coated with a layer of the semiconductor. Following the removal of the carrier, this semiconductor layer defines the desired tube. At least two vertical carriers of carbon material, e.g. graphite, are each held at their lower ends by an electrode, and are connected at their upper ends by a conductive bridge, preferably of carbon.

Abstract translation: 一种用于生产优选硅或锗的半导体材料的管状体的装置。 为此，在反应气体中加热棒状或管状的载体，以使相应的半导体沉淀，由此，载体的护套区域涂覆有半导体层。 在移除载体之后，该半导体层限定所需的管。 至少两个碳材料的垂直载体，例如。 石墨通过电极保持在其下端，并且在其上端通过导电桥，优选碳连接。

公开(公告)号：US3828726A

公开(公告)日：1974-08-13

申请号：US26194472

申请日：1972-06-12

Applicant: SIEMENS AG

Inventor： DIETZE W ,  REUSCHEL K ,  STUT H

IPC: H01L21/00 ,  B05C11/14

CPC classification number: H01L21/67115 ,  Y10S206/832

Abstract: A fixture for positioning semiconductor discs in a diffusion furnace for diffusing doping material therein including a troughshaped holder having sidewalls composed of a semiconductor material, the sidewalls having opposed grooves therein proportioned to receive individual semiconductor discs therein, the sidewalls being positioned to engage the peripheries of said discs along limited areas of contact which lie approximately at the horizontal plane including the center of gravity of the discs.

Abstract translation: 一种用于将半导体盘定位在扩散炉中用于在其中扩散其中的掺杂材料的固定装置，其包括具有由半导体材料构成的侧壁的槽形保持器，所述侧壁具有相对的凹槽，其中各个半导体盘在其中成比例， 围绕着大致在包括盘的重心的水平面的有限接触区域的所述盘的周边。

公开(公告)号：US3747559A

公开(公告)日：1973-07-24

申请号：US3747559D

申请日：1972-05-15

Applicant: SIEMENS AG

Inventor： DIETZE W

IPC: C23C16/01 ,  C23C13/08

CPC classification number: C23C16/01

Abstract: An apparatus comprised of a housing member having an inner hollow chamber, a pair of electrically conductive mounting members electrically insulated from each other and positioned within the chamber, a carbon rod member mounted on one of the mounting members and a carbon tube member mounted on the other of the mounting members concentrically about the rod member, a carbon cap member joining the rod and tube members at their upper surfaces to provide a substantially continuous smooth exterior surface for formation of a tube thereon, means for feeding a gaseous material which includes a semiconductor material into the chamber, means for withdrawing a residual gas from the chamber and means for supplying energy to the mounting means so that the exterior surfaces of the tube member and cap member are uniformly heated and a desired tube closed at one end thereof forms about such heated carbon surfaces.

Abstract translation: 一种装置，包括具有内部中空室的壳体构件，彼此电绝缘并位于腔室内的一对导电安装构件，安装在一个安装构件上的碳棒构件和安装在该壳体构件上的碳管构件 其他安装构件围绕杆构件同心;碳帽构件，其在其上表面处连接杆和管构件，以提供用于在其上形成管的基本上连续的平滑外表面，用于供给包含半导体的气体材料的装置 进入腔室的材料，用于从室中取出残余气体的装置和用于向安装装置供应能量的装置，使得管构件和盖构件的外表面被均匀地加热，并且期望的管在其一端封闭 加热碳表面。

公开(公告)号：US3853974A

公开(公告)日：1974-12-10

申请号：US33429473

申请日：1973-02-21

Applicant: SIEMENS AG

Inventor： REUSCHEL K ,  DIETZE W

IPC: C01B33/02 ,  C23C16/01 ,  C23C16/24 ,  B01J17/28 ,  B29C13/04

CPC classification number: C23C16/24 ,  C01B33/02 ,  C23C16/01 ,  Y10S148/007 ,  Y10S148/025 ,  Y10S148/027 ,  Y10S148/049 ,  Y10S148/073 ,  Y10S148/122

Abstract: An at least unilaterally open hollow body of silicon or other semiconductor material is produced by thermally reducing a gaseous compound of the same material and precipitating the segregated material upon a heated carrier of different material, preferably graphite or other industrial carbon, and thereafter removing the resulting hollow semiconductor body from the carrier. The gaseous compound is supplied to the heated carrier in mixture with a reduction gas, preferably hydrogen, in a molar ratio that substantially corresponds to the reaction equilibrium at the carrier temperature obtaining at the beginning of the reduction and precipitation process. After the precipitated hollow body has reached a layer thickness of a few microns, the molar ratio is changed so as to increase the rate of precipitation. The method can be modified by changing the throughput of the gaseous mixtures from a lower to a higher value after a layer thickness of a few microns has been reached and then continuing the precipitation at a higher rate until the desired full layer thickness is obtained.

Abstract translation: 通过热还原相同材料的气态化合物并将分离的材料沉淀在不同材料，优选石墨或其它工业碳的加热载体上，然后除去所得到的至少单向开放的硅或其它半导体材料的中空体 中空半导体体从载体。 将气态化合物与还原气体（优选氢气）混合加入到加热的载体中，其摩尔比基本上对应于在还原和沉淀过程开始时获得的载体温度下的反应平衡。 在沉淀的中空体已经达到几微米的层厚度之后，改变摩尔比以增加沉淀速率。 可以通过在达到几微米的层厚度之后将气态混合物的生产量从较低值改变为更高的值，然后以更高的速率继续沉淀直到获得所需的全层厚度来修改该方法。

公开(公告)号：US3805735A

公开(公告)日：1974-04-23

申请号：US34825873

申请日：1973-04-05

Applicant: SIEMENS AG

Inventor： REUSCHEL K ,  DIETZE W ,  SUB M

IPC: C30B31/14 ,  C30B31/16 ,  C23C13/08

CPC classification number: C30B31/165 ,  C30B31/14 ,  Y10S118/90

Abstract: In a silicon tube whose diameter is two to three times larger than the diameter of the wafers to be diffused, a rod is situated centrally and in parallel to the tubular axis and has channels extending in parallel to the rod axis. These channels define, together with the tubular wall, cages for the stacks of wafers. In this manner, several parallel wafer stacks may be diffused in a single silicon tube. Favorable degrees of utilization of the silicon tube are obtained with five and six parallel stacks of wafers.

Abstract translation: 在直径比要扩散的晶片的直径大2至3倍的硅管中，杆位于中心并且平行于管状轴线并且具有平行于杆轴线延伸的通道。 这些通道与管状壁一起限定了用于堆叠的晶片的笼。 以这种方式，几个平行的晶片堆叠可以在单个硅管中扩散。 通过五个和六个平行堆叠的晶片获得硅管的有利程度。

公开(公告)号：US3805734A

公开(公告)日：1974-04-23

申请号：US26194272

申请日：1972-06-12

Applicant: SIEMENS AG

Inventor： DIETZE W

IPC: C30B31/10 ,  C23C13/08

CPC classification number: C30B31/10 ,  Y10S118/90

Abstract: A device used for receiving semiconductor discs and doping material during a diffusion process which includes a heating step to diffuse the doping material into the semiconductor disc characterized by the semiconductor disc being arranged in small tubes formed of the same semiconductor material which small tubes are disposed in a larger tube formed of the same semiconductor material and containing the source of doping material. The small tubes are opened at least at one end which receives a supporting member to hold the disc in the proper position in the small tubes and the supporting member has a diameter less than the inner diameter of the tube and is formed of the same semiconductor material.

Abstract translation: 一种用于在扩散过程期间接收半导体盘和掺杂材料的装置，其包括将掺杂材料扩散到半导体盘中的加热步骤，其特征在于，所述半导体盘被布置在由相同的半导体材料形成的小管中，小管被设置在 由相同的半导体材料形成并包含掺杂材料源的较大的管。 小管至少在一端打开，其接收支撑构件以将盘保持在小管中的适当位置，并且支撑构件的直径小于管的内径，并且由相同的半导体材料形成 。

公开(公告)号：US3834349A

公开(公告)日：1974-09-10

申请号：US26194572

申请日：1972-06-12

Applicant: SIEMENS AG

Inventor： DIETZE W ,  EMEIS R ,  REUSCHEL K ,  KELLER W ,  MUEHLBAUER A

IPC: H01L21/00 ,  B05C11/14

CPC classification number: H01L21/67115 ,  Y10S206/833 ,  Y10S269/903

Abstract: A device for holding semiconductor discs during high temperature treatment, such as the diffusion of impurities therein, consisting of a base plate having grooves extending therealong, and a plurality of spaced holders supported by the base plate, the holders having slots therein which are vertically aligned with the grooves in the base plate so that a semiconductor disc positioned with its edge in one of the grooves will be supported by the slots in the holder at a position at or above its center of gravity to prevent bending of the discs during high temperature treatment.

Abstract translation: 一种用于在高温处理期间保持半导体盘的装置，例如其中的杂质的扩散，其由具有沿其延伸的槽的基板组成，以及由基板支撑的多个间隔开的保持器，其中具有垂直对准的槽 底板中的凹槽使得在其一个凹槽中其边缘定位的半导体盘将在保持器中的位于其重心处或其重心处的位置处被支撑，以防止在高温处理期间盘的弯曲 。

公开(公告)号：US3820935A

公开(公告)日：1974-06-28

申请号：US29178772

申请日：1972-09-25

Applicant: SIEMENS AG

Inventor： DIETZE W

IPC: B21C37/06 ,  C01B33/02 ,  C01B33/035 ,  C23C16/01 ,  C23C16/22 ,  C23C16/44 ,  C30B25/00 ,  C30B25/02 ,  C30B29/60 ,  B29C13/00 ,  C23C13/08

CPC classification number: C30B29/06 ,  C23C16/01 ,  C23C16/22 ,  C30B25/00 ,  C30B25/02 ,  C30B29/60

Abstract: A method and device for the production of silicon tubes by deposition of self-supporting silicon layers from the gas-phase onto tubular heated carriers of graphite whereby two such vertical carriers are supported along the periphery of their lower ends by electrodes and are connected at their upper ends by a bridge of conductive material, whereby the tubular shaped carriers, as well as the supporting electrodes and the connecting bridge are so designed with respect to each other that the respective values for the product of the shortest circumference with the smallest current carrying cross-section and the specific conductivity for the electrodes and connecting bridge are at least five times, preferably ten times as large as the values of such products for the tubular carriers, and stopping the production of such layers when the temperature differential between the tubular carriers and the supporting elements, i.e., electrodes and connecting bridge, drops to 300*C.

公开(公告)号：US3793984A

公开(公告)日：1974-02-26

申请号：US3793984D

申请日：1972-11-13

Applicant: SIEMENS AG

Inventor： KASPER A ,  DIETZE W

IPC: C01B33/02 ,  C01B33/027 ,  C23C16/22 ,  C23C16/44 ,  C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  H01L21/205 ,  C23C13/08

CPC classification number: C23C16/22 ,  Y10S148/073 ,  Y10S148/122

Abstract: An apparatus for producing semiconductor tubes by means of depositing semiconductor material from a gaseous atmosphere onto a heated receiver body, the receiver body consists of a concentric assembly of inner and outer conductive members connected at one end by means of cooperating screw threads on the two members, and a conical end cap member covering the end of the assembly and forming a smooth continuous surface with the exterior of the outer member.

Abstract translation: 一种用于通过将半导体材料从气态气体沉积到加热的接收器主体上来制造半导体管的装置，所述接收器主体由内部和外部导电构件的同心组件组成，所述内部和外部导电构件的一端通过在两个构件上的协作螺纹连接 以及覆盖组件的端部的锥形端盖构件，并且与外部构件的外部形成平滑的连续表面。

公开(公告)号：US3781209A

公开(公告)日：1973-12-25

申请号：US3781209D

申请日：1971-12-02

Applicant: SIEMENS AG

Inventor： REUSCHEL K ,  DIETZE W ,  MUHLBAUER A ,  SANDMANN H

IPC: C30B13/00 ,  C30B13/08 ,  C30B13/10 ,  B01J17/08

CPC classification number: C30B13/08 ,  C30B13/00 ,  C30B13/10 ,  Y10S117/912

Abstract: A PERPENDICULAR TUBE OF SEMICONDUCTOR MATERIAL IS FILLED WITH CRYSTALLINE SEMICONDUCTOR WASTE AND/OR DOPANT. A MOLTEN ZONE IS GUIDED THROUGH THE TUBE AND THE FILLING, WHEREBY THE FILLING FUSES WITH THE TUBE.