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    POLYMERIC MONOLITHIC CAPACITOR
    4.
    发明申请
    POLYMERIC MONOLITHIC CAPACITOR 审中-公开

    公开(公告)号：US20170213646A1

    公开(公告)日：2017-07-27

    申请号：US15483780

    申请日：2017-04-10

    申请人： SIGMA LABORATORIES OF ARIZONA, LLC

    发明人： Angelo Yializis

    IPC分类号： H01G4/14 ,  C08F122/14 ,  H01G4/232 ,  H01G4/30 ,  H01G4/005

    CPC分类号： H01G4/14 ,  C08F122/14 ,  H01G4/005 ,  H01G4/129 ,  H01G4/232 ,  H01G4/30 ,  H01G4/304

    摘要： Prismatic polymer monolithic capacitor structure operating at temperatures exceeding 140° C. and including multiple interleaving radiation-cured polymer dielectric layers and metal layers. Method for fabrication of same. The geometry of structure is judiciously chosen to increase sheet resistance of metal electrodes while reducing the capacitor's equivalent series resistance. Metal electrode layers are provided with a thickened peripheral portion to increase strength of terminating connections and are passivated to increase corrosion resistance. Materials for polymer dielectric layers are devised to ensure that the capacitor's dissipation factor remains substantially unchanged across the whole range of operating temperatures, to procure glass transition temperature that is no less than the desired operating temperature, and to optimize the absorption of ambient moisture by the polymeric layers.

    Polymeric monolithic capacitor
    5.
    发明授权
    Polymeric monolithic capacitor 有权

    公开(公告)号：US09711286B2

    公开(公告)日：2017-07-18

    申请号：US14668787

    申请日：2015-03-25

    申请人： SIGMA LABORATORIES OF ARIZONA, LLC

    发明人： Angelo Yializis

    IPC分类号： H01G4/06 ,  H01G4/30 ,  H01G4/12 ,  H01G4/33

    CPC分类号： H01G4/14 ,  C08F122/14 ,  H01G4/005 ,  H01G4/129 ,  H01G4/232 ,  H01G4/30 ,  H01G4/304

    摘要： Prismatic polymer monolithic capacitor structure operating at temperatures exceeding 140° C. and including multiple interleaving radiation-cured polymer dielectric layers and metal layers. Method for fabrication of same. The geometry of structure is judiciously chosen to increase sheet resistance of metal electrodes while reducing the capacitor's equivalent series resistance. Metal electrode layers are provided with a thickened peripheral portion to increase strength of terminating connections and are passivated to increase corrosion resistance. Materials for polymer dielectric layers are devised to ensure that the capacitor's dissipation factor remains substantially unchanged across the whole range of operating temperatures, to procure glass transition temperature that is no less than the desired operating temperature, and to optimize the absorption of ambient moisture by the polymeric layers.

    Polymeric monolithic capacitor
    7.
    发明授权
    Polymeric monolithic capacitor 有权

    公开(公告)号：US10347422B2

    公开(公告)日：2019-07-09

    申请号：US15483780

    申请日：2017-04-10

    申请人： SIGMA LABORATORIES OF ARIZONA, LLC

    发明人： Angelo Yializis

    IPC分类号： H01G4/008 ,  H01G4/30 ,  H01G4/12 ,  H01G4/14 ,  C08F122/14 ,  H01G4/005 ,  H01G4/232

    摘要： Prismatic polymer monolithic capacitor structure operating at temperatures exceeding 140° C. and including multiple interleaving radiation-cured polymer dielectric layers and metal layers. Method for fabrication of same. The geometry of structure is judiciously chosen to increase sheet resistance of metal electrodes while reducing the capacitor's equivalent series resistance. Metal electrode layers are provided with a thickened peripheral portion to increase strength of terminating connections and are passivated to increase corrosion resistance. Materials for polymer dielectric layers are devised to ensure that the capacitor's dissipation factor remains substantially unchanged across the whole range of operating temperatures, to procure glass transition temperature that is no less than the desired operating temperature, and to optimize the absorption of ambient moisture by the polymeric layers.

    ULTRA-BRIGHT PASSIVATED ALUMINUM NANO-FLAKE PIGMENTS
    8.
    发明申请
    ULTRA-BRIGHT PASSIVATED ALUMINUM NANO-FLAKE PIGMENTS 审中-公开

    公开(公告)号：US20170218518A1

    公开(公告)日：2017-08-03

    申请号：US15488185

    申请日：2017-04-14

    申请人： SIGMA LABORATORIES OF ARIZONA, LLC

    发明人： Angelo Yializis

    IPC分类号： C23C22/73 ,  C09C1/00 ,  C09C3/08 ,  C09C3/10 ,  C23C14/28 ,  C09D5/24 ,  C09D11/52 ,  C09D11/037 ,  C23C14/00 ,  C23C14/14 ,  C09C1/64 ,  C09D17/00

    摘要： Nano-thick flakes that are either flat, and specularly-reflective in visible light or that have microroughness intentionally controlled to disperse or interfere with visible light. Coatings and inks utilizing such flakes. Method for fabrication of such flakes in partial vacuum includes the repeated multiple times deposition of a release layer over a substrate surface and a flake layer over the release layer to form a multilayer structure further reduced to individual flakes. Reactive metal is passivated inline with the deposition of the flake layer for superior corrosion resistance. Chemically-functional materials are optionally added to the release material to transfer their functionality to the surface of flake layer to create unique functional properties on a flake surface before the multilayer structure is removed from the substrate.

    High-Surface Capacitor Electrode
    10.
    发明授权
    High-Surface Capacitor Electrode 有权
    高表面电容器电极

    公开(公告)号：US09165717B1

    公开(公告)日：2015-10-20

    申请号：US13753637

    申请日：2013-01-30

    申请人： SIGMA LABORATORIES OF ARIZONA, LLC

    发明人： Angelo Yializis ,  Gordon Goodyear ,  Vladimir Gordyienko ,  Marlowe Engquist

    IPC分类号： B05D5/12 ,  H01G9/048 ,  H01G13/00 ,  C23C14/24 ,  C23C14/32 ,  C23C14/04 ,  C23C14/30 ,  C23C14/28 ,  C23C14/26 ,  B05D3/00

    CPC分类号： H01G9/048 ,  B05D3/00 ,  B05D5/12 ,  C23C14/04 ,  C23C14/14 ,  C23C14/16 ,  C23C14/243 ,  C23C14/246 ,  C23C14/26 ,  C23C14/28 ,  C23C14/30 ,  C23C14/32 ,  C23C14/325 ,  C23C14/5826 ,  C23C14/584 ,  C23C14/5853

    摘要： A high surface area valve-metal capacitor electrode is formed on a moving substrate in vacuum by a continuous multilayer vapor-phase deposition process under conditions of substrate temperature and speed that produce continuously growing, uninterrupted dendritic structures. The process is carried out in an atmosphere of inert gas, preferably including He or Ar, with or without an impurity gas such as oxygen. The substrate may be a valve-metal foil or wire, a metal screen, a polymer film, an organic or inorganic fiber, or a composite material. The direction of motion of the moving substrate may be reversed during the deposition process in order to increase the porosity of the dendrites. The electrode may be passivated using an oxygen-containing plasma before exposure to air. The process may also be carried out under conditions that produce boundary-layer turbulence in order to promote the continuously growth of uninterrupted dendritic structures.

    摘要翻译： 在基板温度和速度的条件下，通过连续的多层气相沉积工艺在真空中在移动的基板上形成高表面积的阀 - 金属电容器电极，从而产生连续生长的，不间断的树枝状结构。 该方法在惰性气体气氛中进行，优选包括He或Ar，有或无杂质气体如氧气。 基材可以是阀 - 金属箔或金属丝，金属网，聚合物膜，有机或无机纤维或复合材料。 移动的衬底的运动方向可以在沉积过程中反转，以增加枝晶的孔隙率。 在暴露于空气之前，可以使用含氧等离子体来钝化电极。 该方法也可以在产生边界层湍流的条件下进行，以促进不间断的树枝状结构的连续生长。