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    Semiconductor light-emitting device, display unit, and electronic apparatus
    3.
    发明授权
    Semiconductor light-emitting device, display unit, and electronic apparatus 有权

    公开(公告)号：US10540916B2

    公开(公告)日：2020-01-21

    申请号：US16062962

    申请日：2016-12-27

    Applicant: SONY CORPORATION

    Inventor： Kota Tokuda ,  Takayuki Kawasumi

    IPC: G09F9/33 ,  H01S5/343 ,  H01S5/22 ,  H01S5/32 ,  H01L33/32

    Abstract: A semiconductor light-emitting device according to an embodiment of the present disclosure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer and including a plurality of well layers. In the plurality of well layers included in the active layer, a band gap inclination angle θ1 of a second well layer located relatively close to the p-type semiconductor layer is smaller than a band gap inclination angle θ2 of a first well layer located relatively close to the n-type semiconductor layer.

    SEMICONDUCTOR LIGHT-EMISSION DEVICE AND MANUFACTURING METHOD
    4.
    发明申请
    SEMICONDUCTOR LIGHT-EMISSION DEVICE AND MANUFACTURING METHOD 审中-公开
    半导体发光装置及制造方法

    公开(公告)号：US20140231838A1

    公开(公告)日：2014-08-21

    申请号：US14167655

    申请日：2014-01-29

    Applicant: Sony Corporation

    Inventor： Kota Tokuda ,  Makoto Oota ,  Takayuki Kawasumi

    IPC: H01L33/30

    CPC classification number: H01L33/04 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/34333

    Abstract: A semiconductor light-emission device includes: a p-type conductive layer that is one or more layers each made of a III-V compound semiconductor; an active layer made of a III-V compound semiconductor; and an electron barrier layer inserted between the p-type conductive layer and the active layer, and made of a III-V compound semiconductor. The electron barrier layer includes first and second regions. The first region is provided closer to the active layer than the second region, has a first interface and a second interface located farther from the active layer than the first interface, and has a band gap of a fixed magnitude. The second region is provided in contact with the second interface, and has a band gap smaller than the band gap of the first region and becomes smaller from an interface with the first region towards an interface with the p-type conductive layer of the second region.

    Abstract translation: 半导体发光器件包括：p型导电层，其为由III-V族化合物半导体制成的一层或多层; 由III-V族化合物半导体制成的有源层; 以及插入在p型导电层和有源层之间并由III-V族化合物半导体制成的电子势垒层。 电子势垒层包括第一和第二区域。 第一区域被提供为比第二区域更靠近有源层，具有比第一界面更靠近有源层的第一界面和第二界面，并具有固定大小的带隙。 第二区域设置成与第二界面接触，并且具有小于第一区域的带隙的带隙，并且从与第一区域的界面朝向与第二区域的p型导电层的界面变小 。

    Semiconductor light-emitting element, manufacturing method of semiconductor light-emitting element, and semiconductor device
    6.
    发明授权
    Semiconductor light-emitting element, manufacturing method of semiconductor light-emitting element, and semiconductor device 有权

    公开(公告)号：US10320146B2

    公开(公告)日：2019-06-11

    申请号：US14633363

    申请日：2015-02-27

    Applicant: Sony Corporation

    Inventor： Kota Tokuda ,  Takayuki Kawasumi

    IPC: H01S5/22 ,  H01S5/042 ,  H01S5/30 ,  H01S5/32 ,  H01S5/343 ,  H01S5/20

    Abstract: A semiconductor light-emitting element includes a laminated structure which has an active layer between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a first semiconductor layer which includes at least the first conductivity-type semiconductor layer of the laminated structure, an insulation film which is formed on the first semiconductor layer and has an opening, and a second semiconductor layer which is formed on the insulation film and includes at least the second conductivity-type semiconductor layer of the laminated structure. The second semiconductor layer includes a first region facing the opening of the insulation film and a second region not facing the opening, and the second region has a portion with a higher impurity concentration than the first region.

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT, MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT, MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND SEMICONDUCTOR DEVICE 审中-公开
    半导体发光元件，半导体发光元件的制造方法和半导体器件

    公开(公告)号：US20150255950A1

    公开(公告)日：2015-09-10

    申请号：US14633363

    申请日：2015-02-27

    Applicant: Sony Corporation

    Inventor： Kota Tokuda ,  Takayuki Kawasumi

    IPC: H01S5/042 ,  H01S5/22 ,  H01S5/343

    CPC classification number: H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2226 ,  H01S5/3054 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2304/04

    Abstract: A semiconductor light-emitting element includes a laminated structure which has an active layer between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a first semiconductor layer which includes at least the first conductivity-type semiconductor layer of the laminated structure, an insulation film which is formed on the first semiconductor layer and has an opening, and a second semiconductor layer which is formed on the insulation film and includes at least the second conductivity-type semiconductor layer of the laminated structure. The second semiconductor layer includes a first region facing the opening of the insulation film and a second region not facing the opening, and the second region has a portion with a higher impurity concentration than the first region.

    Abstract translation: 半导体发光元件包括在第一导电型半导体层和第二导电型半导体层之间具有有源层的层压结构，至少包括层叠的第一导电型半导体层的第一半导体层 结构，形成在第一半导体层上并具有开口的绝缘膜，以及形成在绝缘膜上并且至少包括层叠结构的第二导电类型半导体层的第二半导体层。 第二半导体层包括面向绝缘膜的开口的第一区域和不面向开口的第二区域，并且第二区域具有比第一区域更高的杂质浓度的部分。

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