公开(公告)号：US20160204308A1

公开(公告)日：2016-07-14

申请号：US15074665

申请日：2016-03-18

Applicant: SORAA, INC.

Inventor： THOMAS M. KATONA ,  JAMES W. RARING ,  MARK P. D'EVELYN ,  MICHAEL R. KRAMES ,  AURELIEN J.F. DAVID

IPC: H01L33/20 ,  H01L33/32

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H05B33/0842

Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

Abstract translation: 发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该装置具有横向尺寸和厚的垂直尺寸，使得几何纵横比形成体积二极管，其在横向尺寸的范围内传递几乎均匀的电流密度。

公开(公告)号：US20190044028A1

公开(公告)日：2019-02-07

申请号：US16055683

申请日：2018-08-06

Applicant: SORAA, INC.

Inventor： RAFAEL ALDAZ ,  AURELIEN J.F. DAVID ,  DANIEL F. FEEZELL ,  THOMAS M. KATONA ,  RAJAT SHARMA ,  MICHAEL J. CICH

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L33/20

Abstract: A method of fabricating LEDs from a wafer comprising a substrate and epitaxial layers and having a substrate side and a epitaxial side, said method comprising: (a) applying a laser beam across at least one of said substrate side or said epitaxial side of said wafer to define at least one laser-scribed recess having a laser-machined surface; and (b) singulating said wafer along said laser-scribed recess to form singulated LEDs, said singulated LEDs having a top surface, a bottom surface, and a plurality of sidewalls, at least one of said sidewalls comprising at least a first portion comprising at least a portion of said laser-machined surface.

公开(公告)号：US20160343908A1

公开(公告)日：2016-11-24

申请号：US15226656

申请日：2016-08-02

Applicant: SORAA, INC.

Inventor： RAFAEL ALDAZ ,  AURELIEN J.F. DAVID ,  DANIEL F. FEEZELL ,  THOMAS M. KATONA ,  RAJAT SHARMA ,  MICHAEL J. CICH

IPC: H01L33/22 ,  H01L33/58 ,  H01L33/24 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32

Abstract: A method of fabricating LEDs from a wafer comprising a substrate and epitaxial layers and having a substrate side and a epitaxial side, said method comprising: (a) applying a laser beam across at least one of said substrate side or said epitaxial side of said wafer to define at least one laser-scribed recess having a laser-machined surface; and (b) singulating said wafer along said laser-scribed recess to form singulated LEDs, said singulated LEDs having a top surface, a bottom surface, and a plurality of sidewalls, at least one of said sidewalls comprising at least a first portion comprising at least a portion of said laser-machined surface.

Abstract translation: 一种从包括衬底和外延层并且具有衬底侧和外延侧的晶片制造LED的方法，所述方法包括：（a）在所述晶片的所述衬底侧或所述外延侧中的至少一个上施加激光束 以限定具有激光加工表面的至少一个激光刻划凹槽; 和（b）沿着所述激光刻划的凹槽对所述晶片进行单片化以形成单独的LED，所述分离的LED具有顶表面，底表面和多个侧壁，所述侧壁中的至少一个包括至少第一部分， 所述激光加工表面的至少一部分。

公开(公告)号：US20150207032A1

公开(公告)日：2015-07-23

申请号：US14632755

申请日：2015-02-26

Applicant: SORAA, INC.

Inventor： RAFAEL ALDAZ ,  AURELIEN J.F. DAVID ,  DANIEL F. FEEZELL ,  THOMAS M. KATONA ,  RAJAT SHARMA

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/18 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/18 ,  H01L33/32 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0083

Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.

Abstract translation: 本公开的实施例涉及用于从III族氮化物体积LED芯片实现高性能光提取的改进方法。 更具体地，本文公开了用于使用表面和侧壁粗糙化从III族氮化物体积LED芯片实现高性能光提取的技术。