公开(公告)号：US20160343908A1

公开(公告)日：2016-11-24

申请号：US15226656

申请日：2016-08-02

Applicant: SORAA, INC.

Inventor： RAFAEL ALDAZ ,  AURELIEN J.F. DAVID ,  DANIEL F. FEEZELL ,  THOMAS M. KATONA ,  RAJAT SHARMA ,  MICHAEL J. CICH

IPC: H01L33/22 ,  H01L33/58 ,  H01L33/24 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32

Abstract: A method of fabricating LEDs from a wafer comprising a substrate and epitaxial layers and having a substrate side and a epitaxial side, said method comprising: (a) applying a laser beam across at least one of said substrate side or said epitaxial side of said wafer to define at least one laser-scribed recess having a laser-machined surface; and (b) singulating said wafer along said laser-scribed recess to form singulated LEDs, said singulated LEDs having a top surface, a bottom surface, and a plurality of sidewalls, at least one of said sidewalls comprising at least a first portion comprising at least a portion of said laser-machined surface.

Abstract translation: 一种从包括衬底和外延层并且具有衬底侧和外延侧的晶片制造LED的方法，所述方法包括：（a）在所述晶片的所述衬底侧或所述外延侧中的至少一个上施加激光束 以限定具有激光加工表面的至少一个激光刻划凹槽; 和（b）沿着所述激光刻划的凹槽对所述晶片进行单片化以形成单独的LED，所述分离的LED具有顶表面，底表面和多个侧壁，所述侧壁中的至少一个包括至少第一部分， 所述激光加工表面的至少一部分。

公开(公告)号：US20150207032A1

公开(公告)日：2015-07-23

申请号：US14632755

申请日：2015-02-26

Applicant: SORAA, INC.

Inventor： RAFAEL ALDAZ ,  AURELIEN J.F. DAVID ,  DANIEL F. FEEZELL ,  THOMAS M. KATONA ,  RAJAT SHARMA

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/18 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/18 ,  H01L33/32 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0083

Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.

Abstract translation: 本公开的实施例涉及用于从III族氮化物体积LED芯片实现高性能光提取的改进方法。 更具体地，本文公开了用于使用表面和侧壁粗糙化从III族氮化物体积LED芯片实现高性能光提取的技术。

公开(公告)号：US20190044028A1

公开(公告)日：2019-02-07

申请号：US16055683

申请日：2018-08-06

Applicant: SORAA, INC.

Inventor： RAFAEL ALDAZ ,  AURELIEN J.F. DAVID ,  DANIEL F. FEEZELL ,  THOMAS M. KATONA ,  RAJAT SHARMA ,  MICHAEL J. CICH

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L33/20

Abstract: A method of fabricating LEDs from a wafer comprising a substrate and epitaxial layers and having a substrate side and a epitaxial side, said method comprising: (a) applying a laser beam across at least one of said substrate side or said epitaxial side of said wafer to define at least one laser-scribed recess having a laser-machined surface; and (b) singulating said wafer along said laser-scribed recess to form singulated LEDs, said singulated LEDs having a top surface, a bottom surface, and a plurality of sidewalls, at least one of said sidewalls comprising at least a first portion comprising at least a portion of said laser-machined surface.

公开(公告)号：US20170012168A1

公开(公告)日：2017-01-12

申请号：US15270928

申请日：2016-09-20

Applicant: SORAA, INC.

Inventor： RAJAT SHARMA ,  ANDREW FELKER ,  AURELIEN J.F. DAVID

IPC: H01L33/12 ,  H01L33/16 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/12 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32

Abstract: A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.

Abstract translation: 含氮和氮的光学器件具有基极区域，并且从基极区域提供的三角形结构中不超过三个主要的平面侧面区域。