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    METHODS AND DEVICES FOR LIGHT EXTRACTION FROM A GROUP III-NITRIDE VOLUMETRIC LED USING SURFACE AND SIDEWALL ROUGHENING
    3.
    发明申请
    METHODS AND DEVICES FOR LIGHT EXTRACTION FROM A GROUP III-NITRIDE VOLUMETRIC LED USING SURFACE AND SIDEWALL ROUGHENING 审中-公开
    从使用表面和面板粗糙度的III类氮化物体积的LED轻轻提取的方法和装置

    公开(公告)号：US20160343908A1

    公开(公告)日：2016-11-24

    申请号：US15226656

    申请日：2016-08-02

    Applicant: SORAA, INC.

    Inventor： RAFAEL ALDAZ ,  AURELIEN J.F. DAVID ,  DANIEL F. FEEZELL ,  THOMAS M. KATONA ,  RAJAT SHARMA ,  MICHAEL J. CICH

    IPC: H01L33/22 ,  H01L33/58 ,  H01L33/24 ,  H01L33/32 ,  H01L33/00

    CPC classification number: H01L33/22 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32

    Abstract: A method of fabricating LEDs from a wafer comprising a substrate and epitaxial layers and having a substrate side and a epitaxial side, said method comprising: (a) applying a laser beam across at least one of said substrate side or said epitaxial side of said wafer to define at least one laser-scribed recess having a laser-machined surface; and (b) singulating said wafer along said laser-scribed recess to form singulated LEDs, said singulated LEDs having a top surface, a bottom surface, and a plurality of sidewalls, at least one of said sidewalls comprising at least a first portion comprising at least a portion of said laser-machined surface.

    Abstract translation: 一种从包括衬底和外延层并且具有衬底侧和外延侧的晶片制造LED的方法，所述方法包括：（a）在所述晶片的所述衬底侧或所述外延侧中的至少一个上施加激光束 以限定具有激光加工表面的至少一个激光刻划凹槽; 和（b）沿着所述激光刻划的凹槽对所述晶片进行单片化以形成单独的LED，所述分离的LED具有顶表面，底表面和多个侧壁，所述侧壁中的至少一个包括至少第一部分， 所述激光加工表面的至少一部分。

    HIGH-PERFORMANCE LED FABRICATION
    6.
    发明申请
    HIGH-PERFORMANCE LED FABRICATION 有权
    高性能LED制造

    公开(公告)号：US20150155439A1

    公开(公告)日：2015-06-04

    申请号：US14615315

    申请日：2015-02-05

    Applicant: SORAA, INC.

    Inventor： MICHAEL J. CICH ,  AURELIEN J.F. DAVID ,  CHRISTOPHE HURNI ,  RAFAEL ALDAZ ,  MICHAEL RAGAN KRAMES

    IPC: H01L33/32 ,  F21V29/70 ,  H01L33/60

    CPC classification number: H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

    Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

    Abstract translation: 公开了高性能发光二极管及其装置和方法实施例。 发光二极管器件发射波长为390nm至470nm，波长为405nm至430nm。 发光二极管器件的特征在于在器件的横向尺寸和器件的垂直尺寸之间具有几何关系（例如，纵横比），使得几何纵横比形成体积发光二极管，其传送基本平坦的电流密度 跨越设备（例如，跨过活动区域的横向尺寸测量）。 发光二极管器件的特征在于，有源区中的电流密度大于约175A / cm 2。

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