公开(公告)号：US20180308670A1

公开(公告)日：2018-10-25

申请号：US15899634

申请日：2018-02-20

Applicant: SPTS Technologies Limited

Inventor： ANTHONY WILBY ,  STEVE BURGESS ,  IAN MONCRIEFF ,  CLIVE WIDDICKS ,  SCOTT HAYMORE ,  RHONDA HYNDMAN

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01J37/3408 ,  C23C14/345 ,  C23C14/351 ,  C23C14/50 ,  C23C14/505 ,  H01J37/32669 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3485 ,  H01L21/2855 ,  H01L21/76877

Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

公开(公告)号：US20210246545A1

公开(公告)日：2021-08-12

申请号：US17241237

申请日：2021-04-27

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： SCOTT HAYMORE ,  AMIT RASTOGI ,  RHONDA HYNDMAN ,  STEVE BURGESS ,  IAN MONCRIEFF

IPC: C23C14/50 ,  C23C14/34 ,  C23C14/54 ,  H01J37/34 ,  C23C14/35 ,  H01J37/32

Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.

公开(公告)号：US20160379807A1

公开(公告)日：2016-12-29

申请号：US15190722

申请日：2016-06-23

Applicant: SPTS Technologies Limited

Inventor： ANTHONY PAUL WILBY ,  STEPHEN R. BURGESS ,  IAN MONCRIEFF ,  PAUL DENSLEY ,  CLIVE L. WIDDICKS ,  PAUL RICH ,  ADRIAN THOMAS

IPC: H01J37/32 ,  C23C14/34 ,  H01L21/67

CPC classification number: H01J37/32495 ,  C23C14/34 ,  H01J37/321 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67069

Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

Abstract translation: 用于蚀刻衬底的ICP等离子体蚀刻装置包括至少一个室，位于室内的衬底支撑件，用于产生用于蚀刻衬底的等离子体的等离子体生成装置，以及围绕衬底支撑件的保护结构， 在使用中，保护基板的周边部分免于材料的不希望的沉积。 保护结构被布置成电偏压并且由金属材料形成，使得金属材料可以从保护结构溅射到室的内表面上，以将颗粒材料粘附到内表面。

公开(公告)号：US20200090913A1

公开(公告)日：2020-03-19

申请号：US16541635

申请日：2019-08-15

Applicant: SPTS Technologies Limited

Inventor： TONY WILBY ,  STEVE BURGESS ,  ADRIAN THOMAS ,  RHONDA HYNDMAN ,  SCOTT HAYMORE ,  VLIVE WIDDICKS ,  IAN MONCRIEFF

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/54

Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.

公开(公告)号：US20170294294A1

公开(公告)日：2017-10-12

申请号：US15478283

申请日：2017-04-04

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： SCOTT HAYMORE ,  AMIT RASTOGI ,  RHONDA HYNDMAN ,  STEVE BURGESS ,  IAN MONCRIEFF ,  CHRIS KENDAL

IPC: H01J37/34 ,  C23C14/06 ,  C23C14/50 ,  C23C14/35 ,  H01J37/32 ,  C23C14/34

CPC classification number: H01J37/3405 ,  C23C14/0617 ,  C23C14/0641 ,  C23C14/3407 ,  C23C14/345 ,  C23C14/35 ,  C23C14/505 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3426

Abstract: A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.

公开(公告)号：US20160240351A1

公开(公告)日：2016-08-18

申请号：US15016613

申请日：2016-02-05

Applicant: SPTS Technologies Limited

Inventor： STEPHEN R. BURGESS ,  ANTHONY PAUL WILBY ,  CLIVE L. WIDDICKS ,  IAN MONCRIEFF ,  P. DENSLEY

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32477 ,  H01J2237/0262 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/3065

Abstract: A plasma producing apparatus for plasma processing a substrate Includes a chamber having an interior surface, a plasma production device for producing an inductively coupled plasma within the chamber, a substrate support for supporting the substrate during plasma processing, and a Faraday shield disposed within the chamber for shielding at least part of the interior surface from material removed from the substrate by the plasma processing. The plasma production device includes an antenna and a RF power supply for supplying RF power to the antenna with a polarity which is alternated at a frequency of less than or equal to 1000 Hz.

Abstract translation: 用于等离子体处理衬底的等离子体制造装置包括具有内表面的室，用于在室内产生电感耦合等离子体的等离子体生产装置，用于在等离子体处理期间支撑衬底的衬底支撑件和设置在腔室内的法拉第屏蔽 用于通过等离子体处理将至少部分内表面与从衬底去除的材料进行屏蔽。 等离子体生产装置包括天线和RF电源，用于以小于或等于1000Hz的频率交替的极性向天线提供RF功率。