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公开(公告)号：US10326053B2
公开(公告)日：2019-06-18
申请号：US15745200
申请日：2016-07-11
发明人： Toshiyuki Obata
摘要： A group III nitride semiconductor element includes an active layer between an n-type layer and a p-type layer and has a mesa structure containing the p-type layer, and includes an n electrode on the n-type layer and a p electrode on the p-type layer. The p electrode is obtained by sequentially laminating a first metal layer, a conductive layer and a second metal layer in this order. The resistivity of the conductive layer is higher than the resistivity of the first metal layer.
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公开(公告)号：US12027647B2
公开(公告)日：2024-07-02
申请号：US17285848
申请日：2019-10-07
CPC分类号： H01L33/325 , H01L33/06
摘要： A semiconductor light-emitting element according to the present invention includes an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a p-electrode. The n-type semiconductor layer has a composition of AlGaN or AlInGaN. The active layer is formed on the n-type semiconductor layer. The active layer contains an AlGaN semiconductor or an AlInGaN semiconductor. The p-type semiconductor layer is formed on the active layer. The p-type semiconductor layer has a composition of AlN, AlGaN, or AlInGaN. The p-electrode is formed on the p-type semiconductor layer. The p-type semiconductor layer includes a contact layer formed on the p-electrode. The contact layer includes an AlGaN layer or an AlInGaN layer in which a band gap decreases toward an interface with the p-electrode. The contact layer includes a tunneling contact layer in contact with the p-electrode. The tunneling contact layer is connected to the p-electrode by a tunnel junction.
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公开(公告)号：US10312412B2
公开(公告)日：2019-06-04
申请号：US15555098
申请日：2016-02-29
发明人： Toshiyuki Obata , Tomoaki Satou
摘要： A group III nitride semiconductor light emitting element includes an active layer between an n-type layer and a p-type layer, having an n-electrode on the n-type layer and a p-electrode on the p-type layer, and having a mesa structure containing the p-type layer. In a top view of the group III nitride semiconductor light emitting element, the distance between a portion of an end part of the mesa structure and the periphery of the p-electrode is ⅓ or more of a diffusion length Ls.
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公开(公告)号：US10224458B2
公开(公告)日：2019-03-05
申请号：US15552500
申请日：2016-03-03
发明人： Hiroshi Furuya , Toshiyuki Obata , Toru Kinoshita
摘要： A group III nitride laminate includes, on an AlN single crystal substrate, a multilayer structure having an AlXGa1-XN layer (0
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公开(公告)号：US09896780B2
公开(公告)日：2018-02-20
申请号：US14905559
申请日：2014-07-25
发明人： Hiroshi Furuya , Toshiyuki Obata
CPC分类号： C30B25/186 , C30B25/20 , C30B29/403 , H01L21/02043 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L21/02658
摘要： Provided is a method for pretreatment of a group III nitride single crystal substrate having a high Al composition ratio, for manufacturing a high-quality group III nitride thin film.The method includes heating the base substrate at a temperature range of 1000 to 1250° C. for no less than 5 minutes under a first mixed gas atmosphere before a layer of a second group III nitride single crystal is grown, wherein the first mixed gas includes hydrogen gas and nitrogen gas; the base substrate includes a layer of a first group III nitride single crystal at least on a surface of the base substrate; the first group III nitride single crystal is represented by a composition formula of AlAGaBInCN; and the layer of the second group III nitride single crystal is to be grown on the layer of the first group III nitride single crystal.
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公开(公告)号：US11990564B2
公开(公告)日：2024-05-21
申请号：US17285848
申请日：2019-10-07
CPC分类号： H01L33/325 , H01L33/06
摘要： A semiconductor light-emitting element according to the present invention includes an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a p-electrode. The n-type semiconductor layer has a composition of AlGaN or AlInGaN. The active layer is formed on the n-type semiconductor layer. The active layer contains an AlGaN semiconductor or an AlInGaN semiconductor. The p-type semiconductor layer is formed on the active layer. The p-type semiconductor layer has a composition of AlN, AlGaN, or AlInGaN. The p-electrode is formed on the p-type semiconductor layer. The p-type semiconductor layer includes a contact layer formed on the p-electrode. The contact layer includes an AlGaN layer or an AlInGaN layer in which a band gap decreases toward an interface with the p-electrode. The contact layer includes a tunneling contact layer in contact with the p-electrode. The tunneling contact layer is connected to the p-electrode by a tunnel junction.
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公开(公告)号：US10770621B2
公开(公告)日：2020-09-08
申请号：US16092007
申请日：2017-04-07
发明人： Toshiyuki Obata
摘要： A semiconductor wafer has, on one surface of a sapphire substrate, an element layer including an n-type layer, an active layer, and a p-type layer, and is characterized in that the surface of the element layer is bent in a convex way, and the curvature thereof is 530-800 km−1.
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8.发明授权公开(公告)号：US10937927B2
公开(公告)日：2021-03-02
申请号：US16471547
申请日：2017-12-15
发明人： Toshiyuki Obata
摘要： A group III nitride semiconductor light-emitting element includes a single crystal substrate and an element layer. The element layer includes an n-type layer, an active layer, and a p-type layer formed on the upper surface of the single crystal substrate in this order, and has a composition represented by the composition formula AlXGaYIn1-X-YN (0≤X≤1.0, 0≤Y≤1.0, 0≤X+Y≤1.0). The thickness of the single crystal substrate is at least 80 μm. The area of the upper surface of the substrate is larger than the area of the bottom surface of the substrate.
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公开(公告)号：US10777707B2
公开(公告)日：2020-09-15
申请号：US16096705
申请日：2017-04-26
发明人： Toshiyuki Obata
摘要： A group-Ill nitride stacked body includes a substrate, an n-type first AlGaN layer expressed by the composition formula AlXGa1-XN (0
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公开(公告)号：US20190312178A1
公开(公告)日：2019-10-10
申请号：US16096705
申请日：2017-04-26
发明人： Toshiyuki Obata
摘要： A group-Ill nitride stacked body includes a substrate, an n-type first AlGaN layer expressed by the composition formula AlXGa1-XN (0
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