公开(公告)号：US09287130B1

公开(公告)日：2016-03-15

申请号：US14676345

申请日：2015-04-01

申请人： GLOBALFOUNDRIES Inc. ,  International Business Machines Corporation ,  STMicroelectronics, Inc.

发明人： Xiuyu Cai ,  Ajey Poovannummoottil Jacob ,  Ruilong Xie ,  Bruce Doris ,  Kangguo Cheng ,  Jason R. Cantone ,  Sylvie Mignot ,  David Moreau ,  Muthumanickam Sankarapandian ,  Pierre Morin ,  Su Chen Fan ,  Kisik Choi ,  Murat K. Akarvardar

IPC分类号： H01L21/00 ,  H01L21/308 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/266

CPC分类号： H01L21/823431 ,  H01L21/30604 ,  H01L21/845 ,  H01L29/66795

摘要： A method includes forming a plurality of fin elements above a substrate. A mask is formed above the substrate. The mask has an opening defined above at least one selected fin element of the plurality of fin elements. An ion species is implanted into the at least one selected fin element through the opening to increase its etch characteristics relative to the other fin elements. The at least one selected fin element is removed selectively relative to the other fin elements.

摘要翻译： 一种方法包括在基底上形成多个翅片元件。 在基板上形成掩模。 掩模具有限定在多个翅片元件中的至少一个选定翅片元件上方的开口。 通过开口将离子物质注入到至少一个选定的翅片元件中，以相对于其它翅片元件增加其蚀刻特性。 选择性地将至少一个选定的翅片元件相对于其它翅片元件移除。

公开(公告)号：US10032912B2

公开(公告)日：2018-07-24

申请号：US14588221

申请日：2014-12-31

申请人： STMICROELECTRONICS, INC. ,  GLOBALFOUNDRIES INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Pierre Morin ,  Kangguo Cheng ,  Jody Fronheiser ,  Xiuyu Cai ,  Juntao Li ,  Shogo Mochizuki ,  Ruilong Xie ,  Hong He ,  Nicolas Loubet

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092

摘要： A modified silicon substrate having a substantially defect-free strain relaxed buffer layer of SiGe is suitable for use as a foundation on which to construct a high performance CMOS FinFET device. The substantially defect-free SiGe strain-relaxed buffer layer can be formed by making cuts in, or segmenting, a strained epitaxial film, causing edges of the film segments to experience an elastic strain relaxation. When the segments are small enough, the overall film is relaxed so that the film is substantially without dislocation defects. Once the substantially defect-free strain-relaxed buffer layer is formed, strained channel layers can be grown epitaxially from the relaxed SRB layer. The strained channel layers are then patterned to create fins for a FinFET device. In one embodiment, dual strained channel layers are formed—a tensilely strained layer for NFET devices, and a compressively strained layer for PFET devices.

公开(公告)号：US09166049B2

公开(公告)日：2015-10-20

申请号：US14201555

申请日：2014-03-07

申请人： STMicroelectronics, Inc. ,  International Business Machines Corporation

发明人： Nicolas Loubet ,  Ali Khakifirooz ,  Pierre Morin ,  Sanjay C. Mehta

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/7848 ,  H01L29/66795 ,  H01L29/785

摘要： Methods and structures for increasing strain in fully insulated finFETs are described. The finFET structures may be formed on an insulating layer and include source, channel, and drain regions that are insulated all around. During fabrication, the source and drain regions may be formed as suspended structures. A strain-inducing material may be formed around the source and drain regions on four contiguous sides so as to impart strain to the channel region of the finFET.

摘要翻译： 描述了在全绝缘finFET中增加应变的方法和结构。 finFET结构可以形成在绝缘层上，并且包括绝缘的源极，沟道和漏极区域。 在制造期间，源区和漏区可以形成为悬挂结构。 应变诱导材料可以在四个相邻侧面上的源极和漏极区域周围形成，以便对finFET的沟道区域施加应力。

公开(公告)号：US20150255605A1

公开(公告)日：2015-09-10

申请号：US14201555

申请日：2014-03-07

申请人： International Business Machines Corporation ,  STMicroelectronics, Inc.

发明人： Nicolas Loubet ,  Ali Khakifirooz ,  Pierre Morin ,  Sanjay C. Mehta

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L29/7848 ,  H01L29/66795 ,  H01L29/785

摘要： Methods and structures for increasing strain in fully insulated finFETs are described. The finFET structures may be formed on an insulating layer and include source, channel, and drain regions that are insulated all around. During fabrication, the source and drain regions may be formed as suspended structures. A strain-inducing material may be formed around the source and drain regions on four contiguous sides so as to impart strain to the channel region of the finFET.

摘要翻译： 描述了在全绝缘finFET中增加应变的方法和结构。 finFET结构可以形成在绝缘层上，并且包括绝缘的源极，沟道和漏极区域。 在制造期间，源区和漏区可以形成为悬挂结构。 应变诱导材料可以在四个相邻侧面上的源极和漏极区域周围形成，以便对finFET的沟道区域施加应力。

公开(公告)号：US20160133692A1

公开(公告)日：2016-05-12

申请号：US14982474

申请日：2015-12-29

申请人： STMicroelectronics, Inc. ,  Commissariat a I'energie Atomique et Aux Energies Alternatives ,  GlobalFoundries Inc.

发明人： Pierre Morin ,  Maud Vinet ,  Laurent Grenouillet ,  Ajey Poovannummoottil Jacob

IPC分类号： H01L29/06 ,  H01L21/762 ,  H01L21/02 ,  H01L29/10 ,  H01L21/8234 ,  H01L21/283 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/0607 ,  H01L21/02636 ,  H01L21/283 ,  H01L21/3086 ,  H01L21/32 ,  H01L21/762 ,  H01L21/76264 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/1066 ,  H01L29/66477 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7847 ,  H01L29/7849

摘要： Methods and structures for forming uniaxially-strained, nanoscale, semiconductor bars from a biaxially-strained semiconductor layer are described. A spatially-doubled mandrel process may be used to form a mask for patterning dense, narrow trenches through the biaxially-strained semiconductor layer. The resulting slicing of the biaxially-strained layer enhances carrier mobility and can increase device performance.

摘要翻译： 描述了从双轴应变半导体层形成单轴应变纳米级半导体条的方法和结构。 可以使用空间双倍的心轴工艺来形成用于图案化通过双轴应变半导体层的致密的窄沟槽的掩模。 所得到的双轴应变层的切片增强了载流子迁移率并且可以提高器件性能。

公开(公告)号：US09252208B1

公开(公告)日：2016-02-02

申请号：US14447678

申请日：2014-07-31

申请人： STMicroelectronics, Inc. ,  Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  GLOBALFOUNDRIES Inc.

发明人： Pierre Morin ,  Maud Vinet ,  Laurent Grenouillet ,  Ajey Poovannummoottil Jacob

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/0607 ,  H01L21/02636 ,  H01L21/283 ,  H01L21/3086 ,  H01L21/32 ,  H01L21/762 ,  H01L21/76264 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/1066 ,  H01L29/66477 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7847 ,  H01L29/7849

摘要： Methods and structures for forming uniaxially-strained, nanoscale, semiconductor bars from a biaxially-strained semiconductor layer are described. A spatially-doubled mandrel process may be used to form a mask for patterning dense, narrow trenches through the biaxially-strained semiconductor layer. The resulting slicing of the biaxially-strained layer enhances carrier mobility and can increase device performance.

公开(公告)号：US09466664B2

公开(公告)日：2016-10-11

申请号：US14982474

申请日：2015-12-29

申请人： STMicroelectronics, Inc. ,  Commissariat a l'energie Atomique et Aux Energies Alternatives ,  GlobalFoundries Inc.

发明人： Pierre Morin ,  Maud Vinet ,  Laurent Grenouillet ,  Ajey Poovannummoottil Jacob

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/283 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/10 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L29/0607 ,  H01L21/02636 ,  H01L21/283 ,  H01L21/3086 ,  H01L21/32 ,  H01L21/762 ,  H01L21/76264 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/1066 ,  H01L29/66477 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7847 ,  H01L29/7849

摘要： Methods and structures for forming uniaxially-strained, nanoscale, semiconductor bars from a biaxially-strained semiconductor layer are described. A spatially-doubled mandrel process may be used to form a mask for patterning dense, narrow trenches through the biaxially-strained semiconductor layer. The resulting slicing of the biaxially-strained layer enhances carrier mobility and can increase device performance.

摘要翻译： 描述了从双轴应变半导体层形成单轴应变纳米级半导体条的方法和结构。 可以使用空间双倍的心轴工艺来形成用于图案化通过双轴应变半导体层的致密的窄沟槽的掩模。 所得到的双轴应变层的切片增强了载流子迁移率并且可以提高器件性能。

公开(公告)号：US09647086B2

公开(公告)日：2017-05-09

申请号：US14826803

申请日：2015-08-14

申请人： GLOBALFOUNDRIES Inc. ,  International Business Machines Corporations ,  STMicroelectronics, Inc.

发明人： Steven Bentley ,  Jody Fronheiser ,  Xin Miao ,  Joseph Washington ,  Pierre Morin

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L21/265 ,  H01L21/324 ,  H01L21/306 ,  H01L21/308 ,  H01L21/02

CPC分类号： H01L29/66537 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/324 ,  H01L29/0638 ,  H01L29/105 ,  H01L29/1054 ,  H01L29/165

摘要： A method of performing an early PTS implant and forming a buffer layer under a bulk or fin channel to control doping in the channel and the resulting bulk or fin device are provided. Embodiments include forming a recess in a substrate; forming a PTS layer below a bottom surface of the recess; forming a buffer layer on the bottom surface and on side surfaces of the recess; forming a channel layer on and adjacent to the buffer layer; and annealing the channel, buffer, and PTS layers.

公开(公告)号：US20160035820A1

公开(公告)日：2016-02-04

申请号：US14447678

申请日：2014-07-31

申请人： STMicroelectronics, Inc. ,  Commissariat a l'Energie Atomique et aux Energies Alternatives ,  GLOBALFOUNDRIES Inc.

发明人： Pierre Morin ,  Maud Vinet ,  Laurent Grenouillet ,  Ajey Poovannummoottil Jacob

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/0607 ,  H01L21/02636 ,  H01L21/283 ,  H01L21/3086 ,  H01L21/32 ,  H01L21/762 ,  H01L21/76264 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/1066 ,  H01L29/66477 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7847 ,  H01L29/7849

摘要： Methods and structures for forming uniaxially-strained, nanoscale, semiconductor bars from a biaxially-strained semiconductor layer are described. A spatially-doubled mandrel process may be used to form a mask for patterning dense, narrow trenches through the biaxially-strained semiconductor layer. The resulting slicing of the biaxially-strained layer enhances carrier mobility and can increase device performance.

公开(公告)号：US20180006154A1

公开(公告)日：2018-01-04

申请号：US15196467

申请日：2016-06-29

申请人： International Business Machines Corporation

发明人： Nicolas J. Loubet ,  Yann A. Mignot ,  Pierre Morin

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/165 ,  H01L29/66

CPC分类号： H01L29/7849 ,  H01L29/1054 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785

摘要： According to yet another non-limiting embodiment, a fin-type field effect transistor (finFET) including a strained channel region includes a semiconductor substrate extending along a first axis to define a length, a second axis perpendicular to the first axis to width, and a third direction perpendicular to the first and second axes to define a height. At least one semiconductor fin on an upper surface of the semiconductor substrate includes a semiconductor substrate portion on an upper surface of the semiconductor substrate, a strain-inducing portion on an upper surface of the semiconductor substrate portion, and an active semiconductor portion defining a strained channel region on an upper surface of the strain-inducing portion. A first height of the semiconductor substrate portion is greater than a second height of the strain-inducing portion.