公开(公告)号：US20040251781A1

公开(公告)日：2004-12-16

申请号：US10814619

申请日：2004-03-31

Applicant: STMicroelectronics S.A.

Inventor： Guillaume Bouche ,  Pascal Ancey ,  Gregory Caruyer

IPC: H01L041/04

CPC classification number: B81B3/0078 ,  B81B2201/0271 ,  B81B2201/032 ,  B81B2203/0109 ,  H01G5/16 ,  H03H9/172 ,  H03H2009/02181

Abstract: A device comprising a resonator formed of a piezoelectric layer sandwiched between two metal electrodes, the resonator being laid on a suspended beam, the device comprising means for deforming said beam by the difference in thermal expansion coefficients.

Abstract translation: 一种包括由夹在两个金属电极之间的压电层形成的谐振器的装置，所述谐振器被放置在悬挂梁上，所述装置包括用于使所述光束变形所述热膨胀系数的差异的装置。

公开(公告)号：US20040222074A1

公开(公告)日：2004-11-11

申请号：US10841180

申请日：2004-05-07

Applicant: STMicroelectronics S.A.

Inventor： Guillaume Bouche ,  Daniel Saias

IPC: H01H057/00

CPC classification number: H01H59/0009 ,  H01H61/02 ,  H01H2001/0063 ,  H01H2001/0068 ,  H01H2061/006

Abstract: A multiposition microswitch that includes a cavity, a mobile portion made of a deformable material extending above the cavity, at least three conductive tracks extending on the cavity bottom, and a contact pad on the lower surface of the mobile part. The mobile part is capable of deforming, under the action of a stressing mechanism, from an idle position where the contact pad is distant from the conductive tracks to an on position from among several distinct on positions. The contact pad electrically connects, in each distinct on position, at least two of the at least three conductive tracks, at least one of the conductive tracks connected to the contact pad in each distinct on position being different from the conductive tracks connected to the contact pad in the other distinct on positions.

Abstract translation: 一种多位微动开关，其包括空腔，由空腔上方延伸的可变形材料制成的移动部分，在空腔底部延伸的至少三个导电轨道，以及在所述移动部件的下表面上的接触垫。 移动部件能够在应力机构的作用下从接触垫远离导电轨道的空闲位置变形到几个不同的位置之间的打开位置。 接触焊盘在每个不同的位置上电连接至少三个导电轨道中的至少两个，至少一个导电轨道在每个不同的位置上连接到接触焊盘，其不同于连接到触点的导电轨迹 垫在另一个不同的位置。

公开(公告)号：US20020179991A1

公开(公告)日：2002-12-05

申请号：US10145388

申请日：2002-05-14

Applicant: STMicroelectronics S.A.

Inventor： Michel Varrot ,  Guillaume Bouche ,  Roberto Gonella ,  Eric Sabouret

IPC: H01L031/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/85051 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  Y10S257/92 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

Abstract: Each connecting pad includes a continuous top metal layer on the top metallization level and having on its top face an area for welding a connecting wire. Also, the pad has a reinforcing structure under the welding area and includes at least one discontinuous metal layer on the immediately next lower metallization level, metal vias connecting the discontinuous metal layer to the bottom surface of the top metal layer, and an isolating cover covering the discontinuous metal layer and its discontinuities as well as the inter-via spaces between the two metallic layers.

Abstract translation: 每个连接焊盘包括在顶部金属化水平面上的连续的顶部金属层，并且在其顶面上具有焊接连接线的区域。 此外，焊盘在焊接区域下方具有加强结构，并且在紧接着的下一个金属化层面上包括至少一个不连续的金属层，将不连续金属层连接到顶部金属层的底表面的金属通孔以及隔离盖覆盖物 不连续金属层及其不连续性以及两个金属层之间的通孔间隔。

公开(公告)号：US20020109188A1

公开(公告)日：2002-08-15

申请号：US10044829

申请日：2002-01-11

Applicant: STMICROELECTRONICS S.A.

Inventor： Olivier Menut ,  Guillaume Bouche ,  Herve Jaouen

IPC: H01L027/01

CPC classification number: H01L21/76264 ,  H01L21/76283

Abstract: The semiconductor device comprises a semiconductor substrate (SB) having locally at least one zone (ZL) terminating in the surface of the substrate and entirely bordered, along its lateral edges and its bottom, by an insulating material so as to be completely isolated from the rest of the substrate. The horizontal isolating layer may be a layer of constant thickness or a crenellated layer.

Abstract translation: 半导体器件包括半导体衬底（SB），其具有局部至少一个区域（ZL），该区域（ZL）终止于衬底的表面，并且沿着其侧边缘及其底部通过绝缘材料整齐地界定，从而与绝缘材料完全隔离 底物的剩余部分。 水平隔离层可以是恒定厚度的层或钝化层。