METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, AND CORRESPONDING TOOL

    公开(公告)号:US20220059369A1

    公开(公告)日:2022-02-24

    申请号:US17407612

    申请日:2021-08-20

    Abstract: A semiconductor die is attached to a die pad of a leadframe. The semiconductor die attached to the die pad is arranged in a molding cavity between complementary first and second mold portions. Package material is injected into the molding cavity via at least one injection channel provided in one of the complementary first and second mold portions. Air is evacuated from the molding cavity via at least one air venting channel provided in the other of the complementary first and second mold portions. An exit from the at least one air venting channel may be blocked by a retractable stopper during the injection of the package material.

    METHOD OF MANUFACTURING LEADFRAMES FOR SEMICONDUCTOR DEVICES, CORRESPONDING LEADFRAME AND SEMICONDUCTOR DEVICE

    公开(公告)号:US20220406703A1

    公开(公告)日:2022-12-22

    申请号:US17823650

    申请日:2022-08-31

    Inventor: Pierangelo MAGNI

    Abstract: Leadframes for semiconductor devices are manufactured by providing a laminar substrate of laser direct structuring material, the laminar substrate comprising first and second opposed surfaces, applying laser beam processing to the substrate to provide a first pattern of electrically-conductive formations at the first surface, a second pattern of electrically-conductive formations at the second surface and electrically-conductive vias through the substrate between the first surface and the second surface. Electrically-conductive material is formed, for instance via electrolytic or electroless growth of electrically-conductive material such a copper onto the first and second pattern of electrically-conductive formations as well as onto the electrically-conductive vias provided by applying laser beam processing to the substrate. The electrically-conductive vias are coupled to one or both of the electrically-conductive formations in the first pattern of electrically-conductive formations and the second pattern of electrically-conductive formations.

    SEMICONDUCTOR DEVICE AND CORRESPONDING METHOD

    公开(公告)号:US20170125371A1

    公开(公告)日:2017-05-04

    申请号:US15175930

    申请日:2016-06-07

    Abstract: In an embodiment, a semiconductor device includes: a mounting substrate having electrically conductive formations thereon, a semiconductor die coupled with the mounting substrate, the semiconductor die with electrical contact pillars facing towards the mounting substrate, an anisotropic conductive membrane between the semiconductor die and the mounting substrate, the membrane compressed between the electrical contact pillars and the mounting substrate to provide electrical contact between the electrical contact pillars of the semiconductor die and the electrically conductive formations on the mounting substrate.

    METHOD OF MANUFACTURING LEADFRAMES FOR SEMICONDUCTOR DEVICES, CORRESPONDING LEADFRAME AND SEMICONDCTOR DEVICE

    公开(公告)号:US20200321274A1

    公开(公告)日:2020-10-08

    申请号:US16837565

    申请日:2020-04-01

    Inventor: Pierangelo MAGNI

    Abstract: Leadframes for semiconductor devices are manufactured by providing a laminar substrate of laser direct structuring material, the laminar substrate comprising first and second opposed surfaces, applying laser beam processing to the substrate to provide a first pattern of electrically-conductive formations at the first surface, a second pattern of electrically-conductive formations at the second surface and electrically-conductive vias through the substrate between the first surface and the second surface. Electrically-conductive material is formed, for instance via electrolytic or electroless growth of electrically-conductive material such a copper onto the first and second pattern of electrically-conductive formations as well as onto the electrically-conductive vias provided by applying laser beam processing to the substrate. The electrically-conductive vias are coupled to one or both of the electrically-conductive formations in the first pattern of electrically-conductive formations and the second pattern of electrically-conductive formations.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, CORRESPONDING DEVICE AND CIRCUIT

    公开(公告)号:US20180342433A1

    公开(公告)日:2018-11-29

    申请号:US15975629

    申请日:2018-05-09

    Abstract: A method of manufacturing semiconductor devices includes providing one or more semiconductor chips having a surface with electrical contact pads and a package mass encapsulating the semiconductor chip. The package mass includes a recessed portion leaving the semiconductor chip surface with the contact pads exposed, the recessed portion having a peripheral wall extending from the surface of the semiconductor chip to the outer surface of the package mass. Electrically-conductive formations are provided extending over the peripheral wall of the recessed portion with proximal ends electrically coupled with the contact pads of the semiconductor chip and distal ends at the outer surface of the package mass. The recessed portion is filled with a further package mass by leaving the distal ends of the electrically-conductive formations uncovered.

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