公开(公告)号：US20190165170A1

公开(公告)日：2019-05-30

申请号：US16264384

申请日：2019-01-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco SAMBI ,  Fabrizio Fausto Renzo TOIA ,  Marco MARCHESI ,  Marco MORELLI ,  Riccardo DEPETRO ,  Giuseppe BARILLARO ,  Lucanos Marsilio STRAMBINI

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/66 ,  H01L29/06 ,  H01L29/36 ,  H01L29/08 ,  H01L29/16 ,  H01L21/308 ,  H01L29/32 ,  H03K17/687 ,  H01L29/417 ,  H01L21/265 ,  H01L29/861 ,  H01L21/762 ,  H01L21/3063

CPC classification number: H01L29/7827 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/3063 ,  H01L21/3081 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/32 ,  H01L29/36 ,  H01L29/41741 ,  H01L29/66128 ,  H01L29/66666 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/8611 ,  H03K17/687

Abstract: A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.