公开(公告)号：US20190221652A1

公开(公告)日：2019-07-18

申请号：US16247358

申请日：2019-01-14

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Davide Giuseppe PATTI ,  Marco SAMBI ,  Fabrizio Fausto Renzo TOIA ,  Simone Dario MARIANI ,  Elisabetta PIZZI ,  Giuseppe BARILLARO

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/739 ,  H01L29/66 ,  H01L21/265

CPC classification number: H01L29/7397 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/306 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7813

Abstract: A vertical-conduction semiconductor electronic device includes: a semiconductor body; a body region in the semiconductor body; a source terminal in the body region; a drain terminal spatially opposite to the source region; and a trench gate extending in depth in the semiconductor body through the body region and the source region. The trench gate includes a dielectric region of porous silicon oxide buried in the semiconductor body, and a gate conductive region extending between the dielectric region of porous silicon oxide and the first side.

公开(公告)号：US20200058540A1

公开(公告)日：2020-02-20

申请号：US16105403

申请日：2018-08-20

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Dario MARIANI ,  Fabrizio Fausto Renzo TOIA ,  Marco SAMBI ,  Davide Giuseppe PATTI ,  Marco MORELLI ,  Giuseppe BARILLARO

IPC: H01L21/762 ,  H01L21/306 ,  H01L21/02 ,  H01L29/06

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

公开(公告)号：US20190165170A1

公开(公告)日：2019-05-30

申请号：US16264384

申请日：2019-01-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco SAMBI ,  Fabrizio Fausto Renzo TOIA ,  Marco MARCHESI ,  Marco MORELLI ,  Riccardo DEPETRO ,  Giuseppe BARILLARO ,  Lucanos Marsilio STRAMBINI

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/66 ,  H01L29/06 ,  H01L29/36 ,  H01L29/08 ,  H01L29/16 ,  H01L21/308 ,  H01L29/32 ,  H03K17/687 ,  H01L29/417 ,  H01L21/265 ,  H01L29/861 ,  H01L21/762 ,  H01L21/3063

CPC classification number: H01L29/7827 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/3063 ,  H01L21/3081 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/32 ,  H01L29/36 ,  H01L29/41741 ,  H01L29/66128 ,  H01L29/66666 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/8611 ,  H03K17/687

Abstract: A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

公开(公告)号：US20170018683A1

公开(公告)日：2017-01-19

申请号：US15087183

申请日：2016-03-31

Applicant: STMicroelectronics S.r.l.

Inventor： Marco MORELLI ,  Fabrizio Fausto Renzo TOIA ,  Giuseppe BARILLARO ,  Marco SAMBI

IPC: H01L33/34 ,  H01L33/00

CPC classification number: H01L33/346 ,  H01L33/0054 ,  H01L33/145

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

Abstract translation: 发光装置可以包括具有第一导电类型的半导体本体，其具有前侧和后侧。 发光装置还可以包括在前侧的半导体本体中延伸的多孔硅区域和与多孔硅区域直接侧向接触的阴极区域。 发光装置还可以包括电绝缘材料的阻挡区域，其在阴极区域的底侧处与阴极区域直接接触地延伸，使得在使用中，电流通过侧向部分流过半导体主体 的阴极区域。