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    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED
    5.
    发明公开
    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED 审中-公开

    公开(公告)号：US20230301191A1

    公开(公告)日：2023-09-21

    申请号：US18323262

    申请日：2023-05-24

    Applicant: STMICROELECTRONICS S.r.l.

    Inventor： Paolo FERRARI ,  Flavio Francesco VILLA ,  Lucia ZULLINO ,  Andrea NOMELLINI ,  Luca SEGHIZZI ,  Luca ZANOTTI ,  Bruno MURARI ,  Martina SCOLARI

    IPC: H10N10/855 ,  H10N10/01 ,  H10N10/17

    CPC classification number: H10N10/855 ,  H10N10/01 ,  H10N10/17

    Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

    MEMS THERMOELECTRIC GENERATOR, MANUFACTURING PROCESS OF THE GENERATOR AND HEATING SYSTEM COMPRISING THE GENERATOR
    8.
    发明公开
    MEMS THERMOELECTRIC GENERATOR, MANUFACTURING PROCESS OF THE GENERATOR AND HEATING SYSTEM COMPRISING THE GENERATOR 审中-公开

    公开(公告)号：US20230389426A1

    公开(公告)日：2023-11-30

    申请号：US18318612

    申请日：2023-05-16

    Applicant: STMicroelectronics S.r.l.

    Inventor： Paolo FERRARI ,  Flavio Francesco VILLA ,  Marco DEL SARTO

    IPC: H10N10/17 ,  H10N10/01 ,  H10N10/82

    CPC classification number: H10N10/17 ,  H10N10/01 ,  H10N10/82

    Abstract: MEMS thermoelectric generator comprising: a thermoelectric cell including one or more thermoelectric elements partially extending on a cavity of the thermoelectric cell; a thermoplastic layer extending on the thermoelectric cell and having a top surface and a bottom surface opposite to each other along a first axis, the bottom surface facing the thermoelectric cell and the thermoplastic layer being of thermally insulating material and configured to be processed through laser direct structuring, LDS, technique; a heat sink configured to exchange heat with the thermoelectric cell interposed, along the first axis, between the heat sink and the thermoplastic layer; and a thermal via of metal material, extending through the thermoplastic layer from the top surface to the bottom surface so that it is superimposed, along the first axis, on the cavity, wherein the thermoelectric cell may exchange heat with a thermal source through the thermal via.

    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED
    10.
    发明申请
    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED 有权

    公开(公告)号：US20210359189A1

    公开(公告)日：2021-11-18

    申请号：US17321252

    申请日：2021-05-14

    Applicant: STMICROELECTRONICS S.r.l.

    Inventor： Paolo FERRARI ,  Flavio Francesco VILLA ,  Lucia ZULLINO ,  Andrea NOMELLINI ,  Luca SEGHIZZI ,  Luca ZANOTTI ,  Bruno MURARI ,  Martina SCOLARI

    IPC: H01L35/22 ,  H01L35/32 ,  H01L35/34

    Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

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