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    Pyroelectric detector and method for manufacturing the same
    3.
    发明授权
    Pyroelectric detector and method for manufacturing the same 失效
    热电探测器及其制造方法

    公开(公告)号：US4383174A

    公开(公告)日：1983-05-10

    申请号：US190161

    申请日：1980-09-23

    申请人： Sadao Matsumura ,  Katsuyoshi Fukuta ,  Hitoshi Hirano

    发明人： Sadao Matsumura ,  Katsuyoshi Fukuta ,  Hitoshi Hirano

    IPC分类号： G01J5/34 ,  H01L37/02 ,  G01J1/00

    CPC分类号： H01L37/02 ,  G01J5/34 ,  H01L2224/48091

    摘要： A device for detecting infrared rays using the pyroelectric effect, namely a pyroelectric detector, and methods for manufacturing the pyroelectric detector, are disclosed. The pyroelectric detector comprises a pyroelectric material, an electrode for receiving infrared rays placed on one face of the pyroelectric material, a shield electrode placed at the other face of the pyroelectric material, a substrate made of a semiconductor or conductive material which is fastened to the shield electrode, the substrate having a hole corresponding in position to the position of the infrared receiving electrode and a stand to which the substrate is fastened. The method for manufacturing the pyroelectric detector comprises the steps of forming a shield electrode at one face of a pyroelectric wafer, making holes in a substrate, fastening the substrate to the shield electrode, grinding the other of the wafer, forming electrodes on the other face of the wafer for receiving infrared rays, the position of the electrodes corresponding to the position of the holes, and dicing the pyroelectric material between the holes to form a single pyroelectric detector.

    摘要翻译： 公开了一种使用热电效应检测红外线的装置，即热电检测器，以及制造该热电检测器的方法。 热电检测器包括热电材料，用于接收放置在热电材料的一个面上的红外线的电极，放置在热电材料的另一个面上的屏蔽电极，由半导体或导电材料制成的基板，其被固定到 屏蔽电极，具有与红外线接收电极的位置对应的孔的基板和固定基板的支架。 热电检测器的制造方法包括以下步骤：在热电晶片的一个面上形成屏蔽电极，在基板上形成孔，将基板固定在屏蔽电极上，研磨另一个晶片，在另一个面上形成电极 用于接收红外线的晶片，电极的位置对应于孔的位置，并且将热电材料切割在孔之间以形成单个热电检测器。

    Surface acoustic wave device
    4.
    发明授权
    Surface acoustic wave device 失效
    表面声波装置

    公开(公告)号：US4672255A

    公开(公告)日：1987-06-09

    申请号：US896327

    申请日：1986-08-14

    申请人： Hitoshi Suzuki ,  Yasuo Ebata ,  Sadao Matsumura ,  Jisaburo Ushizawa

    发明人： Hitoshi Suzuki ,  Yasuo Ebata ,  Sadao Matsumura ,  Jisaburo Ushizawa

    IPC分类号： H03H9/02 ,  H03H9/42 ,  H01L41/08

    CPC分类号： H03H9/42 ,  H03H9/02543 ,  H03H9/02834

    摘要： A surface acoustic wave device has been developed, such as a surface acoustic wave filter in which a plurality of electroacoustic interdigital electrodes are formed, as thin films made principally of aluminum, on the surface of a Li.sub.2 B.sub.4 O.sub.7 single crystal substrate and a surface acoustic wave resonator, in which a plurality of electroacoustic interdigital electrodes and grating reflectors for reflecting the surface acoustic wave are formed, as thin films made principally of aluminum, on the surface of a Li.sub.2 B.sub.4 O.sub.7 single crystal substrate. Here, a cut angle, at which the substrate is cut from the Li.sub.2 B.sub.4 O.sub.7 single crystal, and the propagation direction of the surface acoustic wave are so set that, when the Eulerian angle representation is (90.degree..+-..lambda., 90.degree..+-..mu., 90.degree..+-..theta.), .lambda.=38.degree. to 52.degree., .mu.=0.degree. to 5.degree. and .theta.=0.degree. to 10.degree., whereby the TCD of the surface acoustic wave device is below .+-.5 ppm/.degree.C. and coupling coefficient K.sup.2 is about 1.0%, and the propagation speed suffers almost no angular dependence.

    摘要翻译： 已经开发了表面声波装置，例如在Li2B4O7单晶基板的表面上形成多个电声交叉指状电极的表面声波滤波器，主要由铝制成的薄膜和表面声波谐振器 其中，在Li2B4O7单晶衬底的表面上形成多个用于反射表面声波的电声交指电极和光栅反射器，作为主要由铝制成的薄膜。 这里，从Li2B4O7单晶切割基板的切割角度和声表面波的传播方向设定为：当欧拉角度表示为（90°+/-λ，90°±/ - + 82,90°+/-θ），λ= 38°至52°，μ= 0°至5°，θ= 0°至10°，由此表面声波器件的TCD低于+/- 5ppm /℃，耦合系数K2约为1.0％，传播速度几乎没有角度依赖性。

    Method and apparatus for controlling shape of single crystal
    9.
    发明授权
    Method and apparatus for controlling shape of single crystal 失效
    用于控制单晶形状的方法和装置

    公开(公告)号：US4591994A

    公开(公告)日：1986-05-27

    申请号：US543046

    申请日：1983-10-18

    申请人： Syoichi Washizuka ,  Sadao Matsumura

    发明人： Syoichi Washizuka ,  Sadao Matsumura

    IPC分类号： C30B15/28 ,  C30B27/02 ,  C30B29/40 ,  H01L21/208 ,  B01D9/00 ,  G06G7/58 ,  G06G7/66

    CPC分类号： C30B15/28 ,  Y10T117/1008

    摘要： A method for controlling the shape of a single crystal. The weight of a single crystal pulled by the Czochralski method is detected, to obtain a weight signal W. The weight signal W is differentiated over time, to obtain a differential signal dW/dt. Using the differential signal dW/dt, (A.multidot.dW/dt+B).theta. is computed, to obtain an operation signal f. A and B are parameters which are determined by predetermined manufacturing conditions of the Czochralski method, and .theta. is a preset growing angle of the single crystal. The operation signal f is integrated over time, to obtain an integral signal F. The integral signal F and the differential signal dW/dt are compared to obtain a deviation signal. The heating power supplied to the crucible is controlled by use of the deviation signal, to keep the growing angle of the single crystal constant.

    摘要翻译： 用于控制单晶形状的方法。 检测由Czochralski方法拉出的单晶的重量，以获得加权信号W.权重信号W随时间变化，以获得差分信号dW / dt。 使用差分信号dW / dt计算（AxdW / dt + B）θ，以获得操作信号f。 A和B是由Czochralski方法的预定制造条件确定的参数，θ是单晶的预设生长角。 操作信号f随时间积分，以获得积分信号F.比较积分信号F和差分信号dW / dt以获得偏差信号。 通过使用偏差信号来控制提供给坩埚的加热功率，以保持单晶的生长角度恒定。

    Temperature compensated surface acoustic wave device
    10.
    发明授权
    Temperature compensated surface acoustic wave device 失效
    温度补偿声表面波装置

    公开(公告)号：US4489250A

    公开(公告)日：1984-12-18

    申请号：US508044

    申请日：1983-06-27

    申请人： Yasuo Ebata ,  Hitoshi Suzuki ,  Sadao Matsumura ,  Katsuyoshi Fukuta

    发明人： Yasuo Ebata ,  Hitoshi Suzuki ,  Sadao Matsumura ,  Katsuyoshi Fukuta

    IPC分类号： H03H9/25 ,  H03H3/08 ,  H03H9/02

    CPC分类号： H03H9/02543

    摘要： A surface acoustic wave device having a lithium tatraborate single crystal substrate is proposed. An electro-mechanical coupling coefficient K.sup.2 of the substrate is about 1% so as to obtain a surface acoustic wave having sufficient practical energy. When cut angles of the substrate and a propagation direction of the surface acoustic wave are expressed by Eulerian angles (90+.lambda., 90.degree., 90.degree.), a thickness t of an electrode formed on the substrate falls within a region bounded by a dotted curve and an alternate long and short dash curve in FIG. 8. The dotted curve and the alternate long and short dash curve indicate the experimental relationship between the cut angle .lambda. and the thickness t when the TCD is set at 5 and -5 ppm/.degree.C., respectively. When the film thickness t is set within the above-mentioned range, the absolute value of the TCD is set at 5 ppm/.degree.C. or less. When the cut angle .lambda. is 25.degree., the TCD of the substrate becomes zero. Therefore, using the substrate having the above cut angle, the TCD becomes zero or almost zero in the electrode region and nonelectrode region of the surface of the substrate.

    摘要翻译： 提出了具有锂晶体单晶基板的声表面波装置。 基板的机电耦合系数K2约为1％，以获得具有足够的实际能量的表面声波。 当基板的切割角度和表面声波的传播方向由欧拉角（90°λ，90°，90°）表示时，形成在基板上的电极的厚度t落在由点状 曲线和另一长短短曲线。 虚线曲线和交替的长短短曲线分别表示当TCD设定在5和-5ppm /℃时切割角λ和厚度t之间的实验关系。 当膜厚度t设定在上述范围内时，TCD的绝对值设定为5ppm /℃以下。 当切割角度λ为25°时，基板的TCD变为零。 因此，使用具有上述切割角度的基板，在基板表面的电极区域和非电极区域中，TCD变为零或几乎为零。