Display device and manufacturing method thereof

    公开(公告)号:US10658398B2

    公开(公告)日:2020-05-19

    申请号:US16036985

    申请日:2018-07-17

    IPC分类号: H01L27/12

    摘要: A display device includes a substrate, a buffer layer on the substrate, a first semiconductor layer of a first transistor on the buffer layer, a first insulating layer disposed on the first semiconductor layer, a first gate electrode of the first transistor on the first insulating layer, a second insulating layer on the first gate electrode, and a second semiconductor layer of a second transistor disposed on the second insulating layer. A difference between a first distance between a lower side of the buffer layer and an upper side of the second insulating layer and a second distance between an upper side of the first semiconductor layer and an upper side of the second insulating layer is 420 to 520 angstroms.

    Pixel and display device having the same

    公开(公告)号:US12080749B2

    公开(公告)日:2024-09-03

    申请号:US17347222

    申请日:2021-06-14

    IPC分类号: H01L27/15 H01L33/38

    CPC分类号: H01L27/156 H01L33/387

    摘要: A pixel may include a substrate, a dummy insulating pattern on the substrate, a first electrode on the substrate and including a (1-1)th electrode and a (1-2)th electrode that are spaced from each other and aligned with each other along a first direction, a second electrode spaced from the first electrode in a second direction different from the first direction, and including a (2-1)th electrode and a (2-2)th electrode that are spaced from each other and aligned with each other along the first direction, a plurality of light emitting elements electrically connected to the first electrode and the second electrode and emitting light, and a first insulating layer on each of the light emitting elements. Here, the dummy insulating pattern may be connected to one end of at least one of the (1-1)th electrode and the (1-2)th electrode that are aligned with each other along the first direction.

    Display device including light emitting areas around light transmitting areas

    公开(公告)号:US11469274B2

    公开(公告)日:2022-10-11

    申请号:US16927369

    申请日:2020-07-13

    摘要: A display device includes light transmitting areas including a first light transmitting area and light emitting areas around the light transmitting areas and including a first light emitting area disposed around the first light transmitting area, wherein the first light emitting area includes a first-first light emitting area adjacent to a first portion of each of the light transmitting areas, a first-second light emitting area adjacent to a second portion of each of the light transmitting areas, a first-third light emitting area adjacent to a third portion of each of the light transmitting areas, and a first-fourth light emitting area disposed adjacent to a fourth portion of each of the light transmitting areas. The first-first to first-fourth light emitting areas each include at least one of first to third light emitting portions to emit light of first to third colors, respectively.

    Organic light emitting diode display and manufacturing method thereof

    公开(公告)号:US10192901B2

    公开(公告)日:2019-01-29

    申请号:US15247989

    申请日:2016-08-26

    摘要: An organic light emitting diode display having a lightly doped region formed in a transistor for simplifying manufacturing process and reducing manufacturing costs is provided. The organic light emitting diode display includes: a substrate, a transistor on the substrate, and an organic light emitting diode (OLED) connected to the transistor, wherein the transistor includes a semiconductor member on the substrate, an insulating member on the semiconductor member, a source member and a drain member disposed on the semiconductor member and respectively disposed at opposite sides of the insulating member, and a gate electrode on the insulating member, wherein each of the source member and the drain member includes a plurality of layers having different impurity doping concentrations.

    Thin film transistor array panel and method of manufacturing the same
    10.
    发明授权
    Thin film transistor array panel and method of manufacturing the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US09368515B2

    公开(公告)日:2016-06-14

    申请号:US14070886

    申请日:2013-11-04

    IPC分类号: H01L27/12

    摘要: A thin film transistor array panel may include a channel layer including an oxide semiconductor and formed in a semiconductor layer, a source electrode formed in the semiconductor layer and connected to the channel layer at a first side, a drain electrode formed in the semiconductor layer and connected to the channel layer at an opposing second side, a pixel electrode formed in the semiconductor layer in a same portion of the semiconductor layer as the drain electrode, an insulating layer disposed on the channel layer, a gate line including a gate electrode disposed on the insulating layer, a passivation layer disposed on the source and drain electrodes, the pixel electrode, and the gate line, and a data line disposed on the passivation layer. A width of the channel layer may be substantially equal to a width of the pixel electrode in a direction parallel to the gate line.

    摘要翻译: 薄膜晶体管阵列面板可以包括在半导体层中形成的氧化物半导体的沟道层,形成在半导体层中并连接到第一侧的沟道层的源电极,形成在半导体层中的漏电极和 连接到相对的第二侧的沟道层,形成在与漏电极的半导体层相同的部分中的半导体层中的像素电极,设置在沟道层上的绝缘层,设置在栅电极上的栅极线 绝缘层,设置在源电极和漏电极上的钝化层,像素电极和栅极线以及设置在钝化层上的数据线。 沟道层的宽度可以基本上等于像素电极在与栅极线平行的方向上的宽度。