公开(公告)号：US20140349445A1

公开(公告)日：2014-11-27

申请号：US14455771

申请日：2014-08-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seung-Ha CHOI ,  Kyoung-Jae CHUNG ,  Woo-Geun LEE

IPC: H01L21/308 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L21/3086 ,  G02F1/136227 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: Provided are a display substrate, a display device, and a method of manufacturing the display substrate. The display substrate includes: a substrate in which a pixel region is defined; a gate electrode and a gate pad are formed on the substrate; a gate insulating layer formed on the gate electrode and the gate pad; a buffer layer pattern overlaps the gate electrode and is formed on the gate insulating layer; an insulating film pattern formed on the buffer layer pattern; an oxide semiconductor pattern formed on the insulating film pattern; a source electrode formed on the oxide semiconductor pattern; and a drain electrode formed on the oxide semiconductor pattern and is separated from the source electrode.

Abstract translation: 提供了显示基板，显示装置和制造显示基板的方法。 显示基板包括：限定像素区域的基板; 在基板上形成栅电极和栅极焊盘; 形成在栅极电极和栅极焊盘上的栅极绝缘层; 缓冲层图案与栅电极重叠并形成在栅极绝缘层上; 形成在缓冲层图案上的绝缘膜图案; 形成在所述绝缘膜图案上的氧化物半导体图案; 形成在所述氧化物半导体图案上的源电极; 以及形成在氧化物半导体图案上并与源电极分离的漏电极。

公开(公告)号：US20140147947A1

公开(公告)日：2014-05-29

申请号：US14168971

申请日：2014-01-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yu-Gwang JEONG ,  Young-Wook LEE ,  Sang-Gab KIM ,  Woo-Geun LEE ,  Min-Seok OH ,  Jang-Soo KIM ,  Kap-Soo YOON ,  Shin-Il CHOI ,  Hong-Kee CHIN ,  Seung-Ha CHOI ,  Seung-Hwan SHIM ,  Sung-Hoon YANG ,  Ki-Hun JEONG

IPC: H01L27/12

CPC classification number: H01L27/127 ,  H01L27/1214 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/66765

Abstract: Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.

Abstract translation: 本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体 栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成 保护构件和保护构件的相应侧上的欧姆接触。 因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

公开(公告)号：US20140209903A1

公开(公告)日：2014-07-31

申请号：US14230787

申请日：2014-03-31

Applicant: Samsung Display Co., Ltd.

Inventor： Pil-Sang YUN ,  Ki-Won KIM ,  Hye-Young RYU ,  Woo-Geun LEE ,  Seung-Ha CHOI ,  Jae-Hyoung YOUN ,  Kyoung-Jae CHUNG ,  Young-Wook LEE ,  Je-Hun LEE ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Dong-Ju YANG ,  Young-Joo CHOI

IPC: H01L27/12

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract translation: 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。

公开(公告)号：US20150318317A1

公开(公告)日：2015-11-05

申请号：US14798123

申请日：2015-07-13

Applicant: Samsung Display Co., Ltd.

Inventor： Pil-Sang YUN ,  Ki-Won KIM ,  Hye-Young RYU ,  Woo-Geun LEE ,  Seung-Ha CHOI ,  Jae-Hyoung YOUN ,  Kyoung-Jae CHUNG ,  Young-Wook LEE ,  Je-Hun LEE ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Dong-Ju YANG ,  Young-Joo CHOI

IPC: H01L27/12 ,  H01L21/475 ,  H01L21/4757 ,  H01L21/441 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract translation: 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。

公开(公告)号：US20170077246A1

公开(公告)日：2017-03-16

申请号：US15343234

申请日：2016-11-04

Applicant: Samsung Display Co., Ltd.

Inventor： Pil-Sang YUN ,  Ki-Won KIM ,  Hye-Young RYU ,  Woo-Geun LEE ,  Seung-Ha CHOI ,  Jae-Hyoung YOUN ,  Kyoung-Jae CHUNG ,  Young-Wook LEE ,  Je-Hun LEE ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Dong-Ju YANG ,  Young-Joo CHOI

IPC: H01L29/417 ,  H01L29/786 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/4757 ,  H01L21/465 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract translation: 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。