公开(公告)号：US20200071613A1

公开(公告)日：2020-03-05

申请号：US16502164

申请日：2019-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-yun KIM ,  Kenji Takai ,  Do-yoon KIM ,  Sang-kyun KIM ,  Bo-un YOON

IPC: C09K13/00 ,  C09G1/06 ,  H01L21/321 ,  H01L21/28 ,  H01L29/66

Abstract: Disclosed is a slurry composition for chemical mechanical polishing (CMP) includes, as polishing particles, a complex compound of both fullerenol and alkylammonium hydroxide. The slurry composition, which exhibits excellent polishing properties, may be prepared at low cost in large quantities. Also disclosed is a method of preparing the slurry composition comprising obtaining a mixture of a fullerenol complex compound and unreacted hydrogen peroxide by reacting alkylammonium hydroxide, hydrogen peroxide, and fullerene, removing the unreacted hydrogen peroxide by adding hydrogen peroxide decomposition catalyst particles to the mixture, separating the hydrogen peroxide decomposition catalyst particles from the mixture by filtration, and adding a polishing additive to the mixture. Further disclosed is a method of fabricating a semiconductor device that includes providing a pattern defining a trench, forming a metal material film on the pattern to fill the trench, and performing CMP of the metal material film using the slurry composition.

公开(公告)号：US20160027739A1

公开(公告)日：2016-01-28

申请号：US14736455

申请日：2015-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-hyun Park ,  Byoung-ho KWON ,  Dong-chan KIM ,  Choong-seob SHIN ,  Jong-su KIM ,  Bo-un YOON

IPC: H01L23/544 ,  H01L21/66 ,  H01L21/768 ,  H01L21/4757 ,  H01L21/033

CPC classification number: H01L23/544 ,  H01L21/47573 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7684 ,  H01L22/12 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes forming a first alignment mark trench in a first material layer on a substrate. A first alignment mark via may then be formed by etching a second material layer that is underneath the first material layer, where the first alignment mark via is positioned to communicate with the first alignment mark trench. Then, a trench-via-merged-type first alignment mark may be formed by filling the first alignment mark trench and the first alignment mark via with a light reflection material layer.

Abstract translation: 一种制造半导体器件的方法包括在衬底上的第一材料层中形成第一对准标记沟槽。 然后可以通过蚀刻在第一材料层下面的第二材料层来形成第一对准标记通孔，其中第一对准标记通孔被定位成与第一对准标记沟槽连通。 然后，可以通过用光反射材料层填充第一对准标记沟槽和第一对准标记通孔来形成沟槽合并型第一对准标记。

公开(公告)号：US20180282581A1

公开(公告)日：2018-10-04

申请号：US15897261

申请日：2018-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doo-sik MOON ,  Sang-hyun PARK ,  Bo-un YOON ,  Ho-young KIM ,  Se-jung PARK ,  Jae-hak LEE ,  Jin-myung HWANG

IPC: C09G1/02 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463

Abstract: A slurry composition for chemical mechanical polishing, the slurry composition including ceramic polishing particles; a dispersion agent; a pH control agent and an additive having affinity with silicon nitride.