公开(公告)号：US11795347B2

公开(公告)日：2023-10-24

申请号：US17676928

申请日：2022-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji Takai ,  Eigo Miyazaki ,  Do Yoon Kim

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76877

Abstract: A polishing slurry including a hydrophilic nanocarbon particle having a nitrogen-containing functional group, and a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle, the weight ratio expressed as N/C×100% is greater than or equal to about 5 wt %, and a method of manufacturing a semiconductor device using the polishing slurry.

公开(公告)号：US10829690B2

公开(公告)日：2020-11-10

申请号：US16502164

申请日：2019-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-yun Kim ,  Kenji Takai ,  Do-yoon Kim ,  Sang-kyun Kim ,  Bo-un Yoon

IPC: C09K13/00 ,  C09G1/06 ,  H01L21/321 ,  H01L29/66 ,  H01L21/28

Abstract: Disclosed is a slurry composition for chemical mechanical polishing (CMP) includes, as polishing particles, a complex compound of both fullerenol and alkylammonium hydroxide. The slurry composition, which exhibits excellent polishing properties, may be prepared at low cost in large quantities. Also disclosed is a method of preparing the slurry composition comprising obtaining a mixture of a fullerenol complex compound and unreacted hydrogen peroxide by reacting alkylammonium hydroxide, hydrogen peroxide, and fullerene, removing the unreacted hydrogen peroxide by adding hydrogen peroxide decomposition catalyst particles to the mixture, separating the hydrogen peroxide decomposition catalyst particles from the mixture by filtration, and adding a polishing additive to the mixture. Further disclosed is a method of fabricating a semiconductor device that includes providing a pattern defining a trench, forming a metal material film on the pattern to fill the trench, and performing CMP of the metal material film using the slurry composition.

公开(公告)号：US10316424B2

公开(公告)日：2019-06-11

申请号：US15438931

申请日：2017-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji Takai

IPC: C25D15/00 ,  C25D1/00 ,  C25D3/46 ,  C25D5/02 ,  C25D5/48 ,  H05K1/02 ,  H05K1/03 ,  H05K1/09

Abstract: A flexible electrically conductive structure includes: a first polymer layer; and an electrically conductive layer disposed on a surface of the first polymer layer, wherein the electrically conductive layer includes an electrically conductive metal and a nanocarbon material, and wherein the flexible wiring board is to be used with a bending portion provided at least one position of the electrically conductive layer.

公开(公告)号：US11021804B2

公开(公告)日：2021-06-01

申请号：US16176332

申请日：2018-10-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji Takai ,  Sang Eui Lee ,  Daiki Minami

IPC: C25D3/38 ,  C25D7/06 ,  H01B1/04 ,  H05K3/18 ,  H05K1/09 ,  C25D15/00 ,  C25D15/02 ,  H05K1/02 ,  C25D7/12

Abstract: A plating solution including a metal salt, a hydrophilic fullerene, and water, a metal composite material including a hydrophilic fullerene and a method of manufacturing the same, and a wire, a flexible printed circuit (FPC), and an electronic device including the metal composite material.

公开(公告)号：US10961414B2

公开(公告)日：2021-03-30

申请号：US16421568

申请日：2019-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji Takai ,  Sang Eui Lee ,  Ken Kokubo ,  Eigo Miyazaki ,  Do Yoon Kim

IPC: H01L21/321 ,  H01L21/306 ,  H01L21/304 ,  H01L21/302 ,  C09K3/14 ,  C09G1/02 ,  C09G1/00

Abstract: A polishing slurry including a composite including a hydrophilic fullerene and an ionic compound, a method of manufacturing the same, and a method of manufacturing a semiconductor device.

公开(公告)号：US11424133B2

公开(公告)日：2022-08-23

申请号：US16825237

申请日：2020-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji Takai ,  Do Yoon Kim ,  Boun Yoon

IPC: H01L21/321 ,  H01L21/768 ,  H01L21/288 ,  C09G1/04 ,  C09K3/14 ,  B24B37/04

Abstract: A method of manufacturing a metal structure including forming a metal layer including a metal and a nano-abrasive and supplying slurry on the metal layer to perform chemical mechanical polishing, a metal structure including a metal and a nano-abrasive having an average particle diameter of less than about 5 nanometers, and a metal wire, a semiconductor device, and an electronic device including the same.

公开(公告)号：US11254840B2

公开(公告)日：2022-02-22

申请号：US16750060

申请日：2020-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kenji Takai ,  Eigo Miyazaki ,  Do Yoon Kim

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/768

Abstract: A polishing slurry including a hydrophilic nanocarbon particle having a nitrogen-containing functional group, and a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle, the weight ratio expressed as N/C×100% is greater than or equal to about 5 wt %, and a method of manufacturing a semiconductor device using the polishing slurry.

公开(公告)号：US10957557B2

公开(公告)日：2021-03-23

申请号：US16444076

申请日：2019-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Do Yoon Kim ,  Kenji Takai

IPC: H01L21/321 ,  C09G1/02 ,  C09K3/14 ,  B24B37/04 ,  H01L21/306 ,  B82Y30/00

Abstract: A polishing slurry includes a carbon polishing particle and an exothermic material.

公开(公告)号：US20200071613A1

公开(公告)日：2020-03-05

申请号：US16502164

申请日：2019-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-yun KIM ,  Kenji Takai ,  Do-yoon KIM ,  Sang-kyun KIM ,  Bo-un YOON

IPC: C09K13/00 ,  C09G1/06 ,  H01L21/321 ,  H01L21/28 ,  H01L29/66

Abstract: Disclosed is a slurry composition for chemical mechanical polishing (CMP) includes, as polishing particles, a complex compound of both fullerenol and alkylammonium hydroxide. The slurry composition, which exhibits excellent polishing properties, may be prepared at low cost in large quantities. Also disclosed is a method of preparing the slurry composition comprising obtaining a mixture of a fullerenol complex compound and unreacted hydrogen peroxide by reacting alkylammonium hydroxide, hydrogen peroxide, and fullerene, removing the unreacted hydrogen peroxide by adding hydrogen peroxide decomposition catalyst particles to the mixture, separating the hydrogen peroxide decomposition catalyst particles from the mixture by filtration, and adding a polishing additive to the mixture. Further disclosed is a method of fabricating a semiconductor device that includes providing a pattern defining a trench, forming a metal material film on the pattern to fill the trench, and performing CMP of the metal material film using the slurry composition.