公开(公告)号：US20150104932A1

公开(公告)日：2015-04-16

申请号：US14573845

申请日：2014-12-17

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Young Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC: H01L21/02 ,  H01L27/115 ,  C09K13/06

CPC classification number: H01L21/02658 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Abstract translation: 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物。 硅化合物包括硅原子，具有与硅原子结合的氨基的原子团以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。

公开(公告)号：US09368647B2

公开(公告)日：2016-06-14

申请号：US14824786

申请日：2015-08-12

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Young-Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC: C09K13/04 ,  H01L29/792 ,  C09K13/06 ,  C23F1/16 ,  H01L21/311 ,  H01L29/66 ,  H01L29/788 ,  H01L27/115

CPC classification number: H01L29/7926 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889

Abstract: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Abstract translation: 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物材料。 硅化合物材料包括硅原子，选自氮原子，磷原子和与硅原子结合的硫原子中的至少一种，以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。

公开(公告)号：US10128120B2

公开(公告)日：2018-11-13

申请号：US15242190

申请日：2016-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangsu Kim ,  Byoung Jae Park ,  Yongsun Ko ,  Kyunghyun Kim ,  ChangSup Mun ,  Kijong Park

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

Abstract: The inventive concepts provide a method of completely removing a damage region of a surface of an etch target layer after plasma-etching the etch target layer. The method includes performing a first post-etch plasma treatment process using a first post-treatment gas on the plasma-etched etch target layer. A polarity of ions of the first post-treatment gas may be the same as a polarity of bias power applied to a stage in a plasma apparatus.

公开(公告)号：US09136120B2

公开(公告)日：2015-09-15

申请号：US14573845

申请日：2014-12-17

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Young Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC: H01L21/302 ,  H01L21/02 ,  C09K13/04 ,  C23F1/16 ,  C09K13/06 ,  H01L21/311 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792 ,  H01L27/115

CPC classification number: H01L21/02658 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

公开(公告)号：US20150348799A1

公开(公告)日：2015-12-03

申请号：US14824786

申请日：2015-08-12

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Young Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC: H01L21/311 ,  H01L27/115 ,  H01L29/66 ,  C09K13/06

CPC classification number: H01L29/7926 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889

Abstract: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Abstract translation: 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物材料。 硅化合物材料包括硅原子，选自氮原子，磷原子和与硅原子结合的硫原子中的至少一种，以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。