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公开(公告)号:US20250029914A1
公开(公告)日:2025-01-23
申请号:US18430241
申请日:2024-02-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunsoo CHUNG , Kwang-Soo KIM , Jinchan AHN
IPC: H01L23/498 , H01L23/00 , H01L25/065 , H10B80/00
Abstract: A semiconductor package includes a logic die that includes a backside power delivery network layer, an interposer die disposed on the logic die, a plurality of memory dies stacked on the interposer die, and a mold layer that covers the interposer die and the memory dies. Each of the logic die and the interposer die has a first width.
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公开(公告)号:US20240120319A1
公开(公告)日:2024-04-11
申请号:US18376028
申请日:2023-10-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunsoo CHUNG , Younglyong KIM , Taeyoung LEE
IPC: H01L25/065 , H01L23/00 , H01L23/31 , H01L23/48 , H01L23/522
CPC classification number: H01L25/0657 , H01L23/3107 , H01L23/481 , H01L23/5226 , H01L24/05 , H01L24/08 , H01L24/13 , H01L2224/05624 , H01L2224/05647 , H01L2224/08145 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147
Abstract: A semiconductor package includes a first semiconductor structure including a first semiconductor layer having a first active surface and a first circuit device thereon and a first inactive surface and first bonding layer; a second semiconductor structure on the first semiconductor structure and including a second semiconductor layer having a second active surface and second circuit device thereon and a second inactive surface, a second frontside bonding layer, and a second backside bonding layer on the second inactive surface; and a third semiconductor structure on the second semiconductor structure and including a third semiconductor layer having a third active surface including a third circuit device thereon and a third inactive surface, and a third bonding layer, wherein the first bonding layer is bonded to the second frontside bonding layer, and the third bonding layer is bonded to the second backside bonding layer.
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公开(公告)号:US20240088108A1
公开(公告)日:2024-03-14
申请号:US18202375
申请日:2023-05-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Joonghyun BAEK , Yuduk KIM , Hyunsoo CHUNG
IPC: H01L25/10 , H01L23/00 , H01L23/498
CPC classification number: H01L25/105 , H01L23/49827 , H01L24/09 , H01L24/16 , H01L24/32 , H01L24/73 , H01L2224/0903 , H01L2224/16148 , H01L2224/16157 , H01L2224/26145 , H01L2224/32145 , H01L2224/73204 , H01L2924/2064
Abstract: A semiconductor package includes: a base chip; semiconductor chips disposed on the base chip and including front pads disposed on a front surface opposing the base chip, rear pads disposed on a rear surface opposing the front surface, and through-vias; bumps disposed between the semiconductor chips; a dam structure disposed on at least a portion of the rear pads; and insulating adhesive layers at least partially surrounding the bumps and the dam structure, wherein the rear pads include first pads that are disposed in a center region that crosses a center of the rear surface and that are electrically connected to the through-vias, and second pads that are disposed in a peripheral region adjacent to the center region, wherein the second pads include a line pad of which at least a portion has a polygonal shape, and wherein the dam structure has a bent shape.
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公开(公告)号:US20240079340A1
公开(公告)日:2024-03-07
申请号:US18459520
申请日:2023-09-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunsoo CHUNG , Younglyong KIM , Inhyo HWANG
IPC: H01L23/538 , H01L23/00 , H01L23/498 , H01L25/065 , H10B80/00
CPC classification number: H01L23/5386 , H01L23/49811 , H01L24/16 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/33 , H01L24/73 , H01L25/0652 , H10B80/00 , H01L2224/16146 , H01L2224/16227 , H01L2224/2919 , H01L2224/30505 , H01L2224/32146 , H01L2224/32225 , H01L2224/33051 , H01L2224/73204 , H01L2224/73253 , H01L2225/065 , H01L2924/1436 , H01L2924/2064 , H01L2924/2065
Abstract: A semiconductor package includes: a base substrate; an interposer disposed on the base substrate, wherein the interposer includes a plurality of recesses in a bottom surface thereof; a semiconductor chip disposed on the interposer; a plurality of interposer connection terminals between the interposer and the base substrate, wherein the plurality of interposer connection terminals electrically connect the interposer to the base substrate; and a first underfill layer disposed between the interposer and the base substrate, wherein the first underfill layer at least partially surrounds the plurality of interposer connection terminals, wherein the first underfill layer at least partially surrounds a side surface of each of the plurality of recesses and has a slope declining from the bottom surface of the interposer to a top surface of the base substrate.
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公开(公告)号:US20210202423A1
公开(公告)日:2021-07-01
申请号:US17018259
申请日:2020-09-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyunsoo CHUNG , Taewon YOO , Myungkee CHUNG
IPC: H01L23/00 , H01L23/31 , H01L23/532
Abstract: A semiconductor package includes a semiconductor chip including a contact pad on an active surface, a first insulating layer on the active surface including a first opening that exposes the contact pad, a redistribution layer connected to the contact pad and extending to an upper surface of the first insulating layer, a second insulating layer on the first insulating layer and including a second opening that exposes a contact region of the redistribution layer, a conductive post on the contact region, an encapsulation layer on the second insulating layer and surrounding the conductive post, and a conductive bump on an upper surface of the conductive post. The conductive post includes an intermetallic compound (IMC) layer in contact with the conductive bump. An upper surface of the IMC layer is lower than an upper surface of the encapsulation layer.
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公开(公告)号:US20190139785A1
公开(公告)日:2019-05-09
申请号:US16234815
申请日:2018-12-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Chanho LEE , Hyunsoo CHUNG , Hansung RYU , Inyoung LEE
IPC: H01L21/50 , H01L23/00 , H01L23/544 , H01L21/02 , H01L25/065 , H01L23/48 , H01L23/373 , H01L23/58 , H01L21/48 , H01L23/31
Abstract: A semiconductor device including a substrate, an insulating layer on the substrate and including a trench, at least one via structure penetrating the substrate and protruding above a bottom surface of the trench, and a conductive structure surrounding the at least one via structure in the trench may be provided.
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公开(公告)号:US20250022787A1
公开(公告)日:2025-01-16
申请号:US18440215
申请日:2024-02-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunsoo CHUNG , Kwang-Soo Kim , Jaesic Lee
IPC: H01L23/498 , H01L23/00 , H01L25/065
Abstract: Disclosed is a semiconductor package comprising a first semiconductor chip, a second semiconductor chip, and a connection die. A hybrid bonding may be established between the connection die and the first semiconductor chip and between the connection die and the second semiconductor chip. The first semiconductor chip includes a first semiconductor substrate having first and second surfaces. The first surface is closer than the second surface to the connection die. The second semiconductor chip includes a second semiconductor substrate having third and fourth surfaces. The third surface is closer than the fourth surface to the connection die. The first and second semiconductor chips further include a power distribution wiring layer on the second surface of the first semiconductor chip and the fourth surface of the second semiconductor substrate.
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公开(公告)号:US20240222230A1
公开(公告)日:2024-07-04
申请号:US18353313
申请日:2023-07-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyunsoo CHUNG , Dae-Woo KIM , Young Lyong KIM , Inhyo HWANG
IPC: H01L23/48 , H01L21/48 , H01L23/29 , H01L23/538
CPC classification number: H01L23/481 , H01L21/486 , H01L23/293 , H01L23/5384
Abstract: A semiconductor package according to at least one embodiment may include: a first chiplet and a second chiplet disposed side by side with each other, wherein each of the first chiplet and the second comprises a substrate including an active side and a back side opposite to the active side; a back side power distribution network (BSPDN) in the back side of the substrate; and a third chiplet electrically coupling the first chiplet and the second chiplet to each other above the first chiplet and the second chiplet; and a fourth chiplet and a fifth chiplet disposed side by side with the third chiplet.
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公开(公告)号:US20240063155A1
公开(公告)日:2024-02-22
申请号:US18296500
申请日:2023-04-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyunsoo CHUNG , Joonghyun Baek , Hyungu Kang , Taeyoung Kim , Jaekyu Sung , Cheolwoo Lee
CPC classification number: H01L24/06 , H10B80/00 , H01L2224/0401 , H01L2224/06519 , H01L2924/1431 , H01L2924/1434
Abstract: A stack semiconductor package including a base chip, at least two semiconductor chips stacked on the base chip, and a sealing material sealing the at least two semiconductor chips on the base chip may be provided. The at least two semiconductor chips may include an uppermost semiconductor chip and at least one under the uppermost semiconductor chip, the first semiconductor chip includes through electrodes at a central portion thereof along a first direction, the through electrodes arranged along a second direction perpendicular to the first direction, upper dummy pads on outer portions of a back side of the first semiconductor chip, the outer portions being a non-active surface of the first semiconductor chip and being at both sides of the central portion in the first direction, and a dummy pattern connecting the upper dummy pads with each other on the back side.
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公开(公告)号:US20230069511A1
公开(公告)日:2023-03-02
申请号:US17834066
申请日:2022-06-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyunsoo CHUNG , Younglyong KIM , Inhyo HWANG
IPC: H01L25/10 , H01L23/00 , H01L23/498
Abstract: A semiconductor package including a package redistribution layer, a cover insulating layer on the package redistribution layer; a lower semiconductor chip arranged between the package redistribution layer and the cover insulating layer and electrically connected to the package redistribution layer, a lower molding layer surrounding the lower semiconductor chip and filling between the package redistribution layer and the cover insulating layer, a plurality of connection posts electrically connected to the package redistribution layer by passing through the cover insulating layer and the lower molding layer, an upper semiconductor chip arranged above the cover insulating layer electrically connected to the plurality of connection posts, and an upper molding layer filling between the upper semiconductor chip and the cover insulating layer and surrounding the upper semiconductor chip may be provided.
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