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公开(公告)号:USD1019679S1
公开(公告)日:2024-03-26
申请号:US29825005
申请日:2022-01-28
设计人: Jiwon Yoo , Daewon Kim , Hyemi Yu
摘要: FIG. 1 is a front view of the first image in a sequence of a foldable mobile phone with transitional graphical user interface showing our new design with the transitional graphical user interface displayed on an outer display screen of the mobile phone in a folded state;
FIG. 2 is a rear view thereof;
FIG. 3 is a front view of the second image thereof with the transitional graphical user interface displayed on an outer display screen of the mobile phone in a folded state;
FIG. 4 is a rear view thereof;
FIG. 5 is a front view of the third image thereof with the transitional graphical user interface displayed on an inner display screen of the mobile phone in an open state; and,
FIG. 6 is a rear view thereof.
The broken lines in the figures depict portions of the foldable mobile phone with transitional graphical user interface which form no part of the claimed design.
The appearance of the transitional graphical user interface sequentially transitions between the images shown in FIGS. 1, 3 and 5. The process or period in which one image transitions to another forms no part of the claimed design.-
公开(公告)号:USD1015370S1
公开(公告)日:2024-02-20
申请号:US29784574
申请日:2021-05-20
设计人: Eunsil Lim , Daewon Kim , Minho Yang , Yeonjoo Jwa
摘要: FIG. 1 is the first image in a sequence for a display screen or portion thereof with transitional graphical user interface showing our new design in accordance to a first embodiment;
FIG. 2 is the second image in a sequence thereof;
FIG. 3 is the third image in a sequence thereof;
FIG. 4 is the fourth image in a sequence thereof;
FIG. 5 is a fifth image in a sequence thereof;
FIG. 6 is a sixth image in a sequence thereof;
FIG. 7 is the first image in a sequence for a display screen or portion thereof with transitional graphical user interface showing our new design in accordance to a second embodiment;
FIG. 8 is the second image in a sequence thereof;
FIG. 9 is the third image in a sequence thereof;
FIG. 10 is the fourth image in a sequence thereof;
FIG. 11 is a fifth image in a sequence thereof; and,
FIG. 12 is a sixth image in a sequence thereof.
The outermost broken lines illustrate the display screen or portion thereof and form no part of the claimed design. The remaining broken lines in the figures depict portions of the display screen or portion thereof with transitional graphical user interface which form no part of the claimed design.
The appearance of the transitional graphical user interface sequentially transitions between the images shown in FIGS. 1-6 and in FIGS. 7-12, respectively. The process or period in which one image transitions to another forms no part of the claimed design.-
公开(公告)号:USD886850S1
公开(公告)日:2020-06-09
申请号:US29654449
申请日:2018-06-25
设计人: Daewon Kim , Hyun Yeul Lee , Insheik Martin Jung , Hyosang Bang , Youngseong Kim , Jaewon Park , Jiyoung Han
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公开(公告)号:USD886845S1
公开(公告)日:2020-06-09
申请号:US29685299
申请日:2019-03-27
设计人: Daewon Kim , Hyun Yeul Lee , Insheik Martin Jung , Hyosang Bang , Youngseong Kim , Jaewon Park , Jiyoung Han
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公开(公告)号:US11626411B2
公开(公告)日:2023-04-11
申请号:US17137684
申请日:2020-12-30
发明人: Jiyoung Kim , Daewon Kim , Dongjin Lee
IPC分类号: H01L27/108 , G11C5/06 , G11C11/408 , G11C11/4091 , G11C11/4097
摘要: Disclosed are a semiconductor memory device and a method of fabricating the same. The device may include a first substrate comprising a cell array region, a first interlayer insulating layer covering the first substrate, a second substrate disposed on the first interlayer insulating layer, the second substrate including a core region electrically connected to the cell array region, a first adhesive insulating layer interposed between the first interlayer insulating layer and the second substrate, and contact plugs penetrating the second substrate, the first adhesive insulating layer, and the first interlayer insulating layer and electrically connecting the cell array region with the core region.
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公开(公告)号:USD951289S1
公开(公告)日:2022-05-10
申请号:US29667470
申请日:2018-10-22
设计人: Daewon Kim , Hyosang Bang , Hyun Yeul Lee , Hyeryoung Choi , Jiyoung Han
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公开(公告)号:USD834060S1
公开(公告)日:2018-11-20
申请号:US29613440
申请日:2017-08-10
设计人: Daewon Kim , Hyosang Bang , Hyun Yeul Lee , Hyeryoung Choi , Jiyoung Han
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公开(公告)号:USD821436S1
公开(公告)日:2018-06-26
申请号:US29617169
申请日:2017-09-12
设计人: Daewon Kim , Hyun Yeul Lee , Insheik Martin Jung , Hyosang Bang , Youngseong Kim , Jaewon Park , Jiyoung Han
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公开(公告)号:USD771088S1
公开(公告)日:2016-11-08
申请号:US29495812
申请日:2014-07-03
设计人: Daewon Kim , Jee Yeun Wang , Kyung Dae Park , Seung Myung Lee
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公开(公告)号:US12132101B2
公开(公告)日:2024-10-29
申请号:US17568170
申请日:2022-01-04
发明人: Beomjin Park , Dongwon Kim , Bongseok Suh , Daewon Kim
IPC分类号: H01L29/66 , H01L29/10 , H01L29/417 , H01L29/78
CPC分类号: H01L29/6681 , H01L29/1033 , H01L29/41791 , H01L29/7851
摘要: A semiconductor device includes a first and second active regions extending in a first direction and having respective first and second widths in a second direction, the second width greater than the first width, a connection region connected to the first and second active regions and having a third width, between the first and second widths in the second direction, first and second gate structures respectively intersecting the first and second active regions and extending in the second direction, and a dummy structure intersecting at least a portion of the connection region, extending in the second direction, and between the first and second gate structures in the first direction. The dummy structure includes first and second pattern portions spaced apart from a side surface of the first gate structure by respective first and second distances in the first direction, the second distance greater than the first distance.
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