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公开(公告)号：US12132101B2
公开(公告)日：2024-10-29
申请号：US17568170
申请日：2022-01-04
发明人： Beomjin Park , Dongwon Kim , Bongseok Suh , Daewon Kim
IPC分类号： H01L29/66 , H01L29/10 , H01L29/417 , H01L29/78
CPC分类号： H01L29/6681 , H01L29/1033 , H01L29/41791 , H01L29/7851
摘要： A semiconductor device includes a first and second active regions extending in a first direction and having respective first and second widths in a second direction, the second width greater than the first width, a connection region connected to the first and second active regions and having a third width, between the first and second widths in the second direction, first and second gate structures respectively intersecting the first and second active regions and extending in the second direction, and a dummy structure intersecting at least a portion of the connection region, extending in the second direction, and between the first and second gate structures in the first direction. The dummy structure includes first and second pattern portions spaced apart from a side surface of the first gate structure by respective first and second distances in the first direction, the second distance greater than the first distance.
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公开(公告)号：US20240038873A1
公开(公告)日：2024-02-01
申请号：US18483413
申请日：2023-10-09
发明人： Bongseok Suh , Daewon Kim , Beomjin Park , Sukhyung Park , Sungil Park , Jaehoon Shin , Bongseob Yang , Junggun You , Jaeyun Lee
IPC分类号： H01L29/66 , H01L29/10 , H01L29/423 , H01L29/786
CPC分类号： H01L29/6656 , H01L29/1033 , H01L29/42376 , H01L29/78696 , H01L29/66553 , H01L29/7727
摘要： A semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.
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公开(公告)号：US11699759B2
公开(公告)日：2023-07-11
申请号：US17545072
申请日：2021-12-08
发明人： Seungmin Song , Junbeom Park , Bongseok Suh , Junggil Yang
IPC分类号： H01L29/78 , H01L29/66 , H01L29/423 , H01L21/8234 , H01L27/088
CPC分类号： H01L29/785 , H01L21/823431 , H01L27/0886 , H01L29/42392 , H01L29/66545 , H01L29/66795
摘要： Integrated circuit devices including a fin shaped active region and methods of forming the same are provided. The devices may include a fin shaped active region, a plurality of semiconductor patterns on the fin shaped active region, a gate electrode on the plurality of semiconductor patterns, and source/drain regions on opposing sides of the gate electrode, respectively. The gate electrode may include a main gate portion extending on an uppermost semiconductor pattern and a sub-gate portion extending between two adjacent ones of the plurality of semiconductor patterns. The sub-gate portion may include a sub-gate center portion and sub-gate edge portions. In a horizontal cross-sectional view, a first width of the sub-gate center portion in a first direction may be less than a second width of one of the sub-gate edge portions in the first direction.
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公开(公告)号：US11227952B2
公开(公告)日：2022-01-18
申请号：US16743206
申请日：2020-01-15
发明人： Seungmin Song , Junbeom Park , Bongseok Suh , Junggil Yang
IPC分类号： H01L29/78 , H01L29/66 , H01L29/423 , H01L21/8234 , H01L27/088
摘要： Integrated circuit devices including a fin shaped active region and methods of forming the same are provided. The devices may include a fin shaped active region, a plurality of semiconductor patterns on the fin shaped active region, a gate electrode on the plurality of semiconductor patterns, and source/drain regions on opposing sides of the gate electrode, respectively. The gate electrode may include a main gate portion extending on an uppermost semiconductor pattern and a sub-gate portion extending between two adjacent ones of the plurality of semiconductor patterns. The sub-gate portion may include a sub-gate center portion and sub-gate edge portions. In a horizontal cross-sectional view, a first width of the sub-gate center portion in a first direction may be less than a second width of one of the sub-gate edge portions in the first direction.
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公开(公告)号：US11062961B2
公开(公告)日：2021-07-13
申请号：US16408912
申请日：2019-05-10
发明人： Sangmin Yoo , Juyoun Kim , Hyungjoo Na , Bongseok Suh , Jooho Jung , Euichul Hwang , Sungmoon Lee
IPC分类号： H01L27/088 , H01L21/8234 , H01L23/522 , H01L29/06 , H01L29/66 , H01L21/311 , H01L21/8238 , H01L27/118 , H01L21/762
摘要： A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.
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公开(公告)号：US11810964B2
公开(公告)日：2023-11-07
申请号：US17060193
申请日：2020-10-01
发明人： Bongseok Suh , Daewon Kim , Beomjin Park , Sukhyung Park , Sungil Park , Jaehoon Shin , Bongseob Yang , Junggun You , Jaeyun Lee
IPC分类号： H01L29/66 , H01L29/10 , H01L29/423 , H01L29/786 , H01L29/772 , H01L21/28 , H01L21/8234
CPC分类号： H01L29/6656 , H01L29/1033 , H01L29/42376 , H01L29/66553 , H01L29/78696 , H01L21/28141 , H01L21/823468 , H01L29/1037 , H01L29/66719 , H01L29/7727
摘要： A semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.
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公开(公告)号：US20220165729A1
公开(公告)日：2022-05-26
申请号：US17382956
申请日：2021-07-22
发明人： Jaehoon Shin , Bongseok Suh , Daewon Kim , Sukhyung Park , Junggun You , Jaeyun Lee
IPC分类号： H01L27/092 , H01L29/06 , H01L29/423 , H01L29/49 , H01L29/786 , H01L21/02 , H01L21/28 , H01L21/8238 , H01L29/66
摘要： A semiconductor device may include a substrate including first and second active regions and a field region therebetween, first and second active patterns respectively provided on the first and second active regions, first and second source/drain patterns respectively provided on the first and second active patterns, a first channel pattern between the first source/drain patterns and a second channel pattern between the second source/drain patterns, and a gate electrode extended from the first channel pattern to the second channel pattern to cross the field region. Each of the first and second channel patterns may include semiconductor patterns, which are stacked to be spaced apart from each other. A width of a lower portion of the gate electrode on the field region may decrease with decreasing distance from a top surface of the substrate.
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公开(公告)号：US20210273105A1
公开(公告)日：2021-09-02
申请号：US17320617
申请日：2021-05-14
发明人： Seungmin Song , Bongseok Suh , Junggil Yang , Soojin Jeong
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L29/423
摘要： An integrated circuit includes a fin active region protruding from a substrate, a plurality of semiconductor patterns on an upper surface of the fin active region, a gate electrode that surrounds the plurality of semiconductor patterns and includes a main gate part on an uppermost one of the plurality of semiconductor patterns and sub gate parts between the plurality of semiconductor patterns, a spacer structure on a sidewall of the main gate part, and a source/drain region at a side of the gate electrode. The source/drain region is connected to the plurality of semiconductor patterns and contacts a bottom surface of the spacer structure. A top portion of the uppermost semiconductor pattern has a first width. A bottom portion of the uppermost semiconductor pattern has a second width smaller than the first width.
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公开(公告)号：US11961914B2
公开(公告)日：2024-04-16
申请号：US18321962
申请日：2023-05-23
发明人： Seungmin Song , Junbeom Park , Bongseok Suh , Junggil Yang
IPC分类号： H01L29/78 , H01L21/8234 , H01L27/088 , H01L29/423 , H01L29/66
CPC分类号： H01L29/785 , H01L21/823431 , H01L27/0886 , H01L29/42392 , H01L29/66545 , H01L29/66795
摘要： Integrated circuit devices including a fin shaped active region and methods of forming the same are provided. The devices may include a fin shaped active region, a plurality of semiconductor patterns on the fin shaped active region, a gate electrode on the plurality of semiconductor patterns, and source/drain regions on opposing sides of the gate electrode, respectively. The gate electrode may include a main gate portion extending on an uppermost semiconductor pattern and a sub-gate portion extending between two adjacent ones of the plurality of semiconductor patterns. The sub-gate portion may include a sub-gate center portion and sub-gate edge portions. In a horizontal cross-sectional view, a first width of the sub-gate center portion in a first direction may be less than a second width of one of the sub-gate edge portions in the first direction.
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公开(公告)号：US11894463B2
公开(公告)日：2024-02-06
申请号：US18093877
申请日：2023-01-06
发明人： Seungmin Song , Bongseok Suh , Junggil Yang , Soojin Jeong
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L29/423
CPC分类号： H01L29/7853 , H01L29/0653 , H01L29/0673 , H01L29/0847 , H01L29/42392
摘要： An integrated circuit includes a fin active region protruding from a substrate, a plurality of semiconductor patterns on an upper surface of the fin active region, a gate electrode that surrounds the plurality of semiconductor patterns and includes a main gate part on an uppermost one of the plurality of semiconductor patterns and sub gate parts between the plurality of semiconductor patterns, a spacer structure on a sidewall of the main gate part, and a source/drain region at a side of the gate electrode. The source/drain region is connected to the plurality of semiconductor patterns and contacts a bottom surface of the spacer structure. A top portion of the uppermost semiconductor pattern has a first width. A bottom portion of the uppermost semiconductor pattern has a second width smaller than the first width.
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