公开(公告)号：US20240321557A1

公开(公告)日：2024-09-26

申请号：US18679784

申请日：2024-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiye KIM ,  In Cheol Cheol SONG ,  Woongpil JEON ,  Daihong KIM ,  Jaebeom PARK ,  Byungho CHUN

IPC: H01J37/32 ,  C23C16/505 ,  H05K9/00

CPC classification number: H01J37/32449 ,  C23C16/505 ,  H01J37/32082 ,  H05K9/0081 ,  H01J2237/3321

Abstract: An apparatus for manufacturing a semiconductor device includes a chamber including a lower housing and an upper housing, heater chucks in the lower housing, shower heads on the heater chucks, the shower heads being between the lower housing and the upper housing, power supplies connected to the shower heads to provide radio-frequency powers to the shower heads, power straps in the upper housing to connect the shower heads to the power supplies, and shielding members in the upper housing, the shielding members enclosing the power straps and the shower heads, respectively, the shielding members to prevent electromagnetic interference of the radio-frequency powers between the power straps and between the shower heads.

公开(公告)号：US20250137131A1

公开(公告)日：2025-05-01

申请号：US18670957

申请日：2024-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minju LEE ,  Daihong KIM ,  Sangho RHA ,  Juchan BANG ,  Seungjae SIM ,  Mingyu JEON

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/56

Abstract: A deposition apparatus includes: a chamber; a support unit within the chamber and including a chuck and a driving member, wherein a substrate is seated on the chuck, wherein the chuck has a first process position and a second process position, wherein the first process position is for processing the substrate in a first process, wherein the second process position is for processing the substrate in a second process, wherein the driving member moves the chuck between the first process position and the second process position; a showerhead supplying process gas toward the substrate, when the chuck is located in the first process position; a power supply unit supplying power to generate plasma between the chuck and the showerhead; and a first ultraviolet lamp disposed in the chamber and emitting ultraviolet rays toward the substrate, when the chuck is located in the second process position.

公开(公告)号：US20240172445A1

公开(公告)日：2024-05-23

申请号：US18482963

申请日：2023-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongyoung KIM ,  Daihong KIM ,  Iksoo KIM

IPC: H10B43/27 ,  G11C16/04 ,  H01L23/522 ,  H01L23/528 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

CPC classification number: H10B43/27 ,  G11C16/0483 ,  H01L23/5226 ,  H01L23/5283 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

Abstract: A semiconductor device may include gate electrodes spaced apart from each other in a first direction on a substrate and including pads in a stepped shape, a channel extending through the gate electrodes, a first through via, first and second separation insulating layers, and an insulating pattern. The gate electrodes may include second gate electrodes below a first gate electrode. The first through via may pass through and electrically connect to a first pad of the first gate electrode, pass through the second gate electrodes, and include a connection portion connected to a conductive pillar. The connection portion may contact the first pad. The first separation insulating layer may be on an upper surface of the connection portion. The second separation insulating layer may be on a bottom surface of the connection portion. The insulating pattern may be between the first through via and sidewalls of the second gate electrodes.

公开(公告)号：US20220157566A1

公开(公告)日：2022-05-19

申请号：US17356998

申请日：2021-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiye KIM ,  In Cheol SONG ,  Woongpil JEON ,  Daihong KIM ,  Jaebeom PARK ,  Byungho CHUN

IPC: H01J37/32 ,  H05K9/00 ,  C23C16/505

Abstract: An apparatus for manufacturing a semiconductor device includes a chamber including a lower housing and an upper housing, heater chucks in the lower housing, shower heads on the heater chucks, the shower heads being between the lower housing and the upper housing, power supplies connected to the shower heads to provide radio-frequency powers to the shower heads, power straps in the upper housing to connect the shower heads to the power supplies, and shielding members in the upper housing, the shielding members enclosing the power straps and the shower heads, respectively, the shielding members to prevent electromagnetic interference of the radio-frequency powers between the power straps and between the shower heads.