公开(公告)号：US20170292683A1

公开(公告)日：2017-10-12

申请号：US15364571

申请日：2016-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Hyuk KIM ,  June JANG ,  Jin Sun JUNG

IPC: F21V17/02 ,  H01L33/60 ,  H01L33/56 ,  H01L33/50 ,  H01L33/62 ,  H01L33/58 ,  H01L33/32 ,  H01L33/06 ,  H01L33/42 ,  H01L33/38 ,  F21V3/02 ,  F21V7/04 ,  F21V23/00 ,  F21V15/015 ,  F21V29/74 ,  F21V23/06 ,  H01L33/48

CPC classification number: F21V17/02 ,  F21K9/272 ,  F21K9/275 ,  F21K9/278 ,  F21S2/00 ,  F21S4/28 ,  F21V3/02 ,  F21V7/04 ,  F21V15/015 ,  F21V17/14 ,  F21V19/003 ,  F21V23/005 ,  F21V23/06 ,  F21V29/74 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2924/00014

Abstract: A lighting apparatus includes a fixture having a fastening hole, the fastening hole including a first portion and a second portion connected to each other, and the second portion having a width smaller than a diameter of the first portion, a light source module having a fastening pin detachably fastened to the fastening hole, and an electrode terminal on the fixture and connected to the light source module, wherein the light source module is slidably moveable along a surface of the fixture, as the fastening pin is moveable within the fastening hole from the first portion to the second portion.

公开(公告)号：US20140312430A1

公开(公告)日：2014-10-23

申请号：US14318957

申请日：2014-06-30

Applicant: SAMSUNG Electronics Co., Ltd.

Inventor： Dong Hyuk KIM ,  Dongsuk SHIN ,  Myungsun KIM ,  Hoi Sung CHUNG

IPC: H01L29/78 ,  H01L29/08 ,  H01L27/088

CPC classification number: H01L29/7848 ,  H01L21/02057 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823425 ,  H01L27/088 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/45 ,  H01L29/66636

Abstract: A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.

Abstract translation: 制造一个或多个半导体器件的方法包括在半导体衬底中形成沟槽，执行循环过程以从沟槽去除污染物，以及在沟槽上形成外延层。 循环过程包括将含有锗烷，氯化氢和氢的第一反应气体和含有氯化氢和氢的第二反应气体依次提供到半导体衬底上。

公开(公告)号：US20150179795A1

公开(公告)日：2015-06-25

申请号：US14626211

申请日：2015-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Hyuk KIM ,  Hoi Sung Chung ,  Dongsuk Shin ,  Naein Lee

IPC: H01L29/78 ,  H01L29/04

CPC classification number: H01L29/7833 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66477 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: A semiconductor device including source drain stressors and methods of manufacturing the same are provided. The methods may include forming a recess region in the substrate at a side of a gate pattern, and an inner surface of the recess region may include a first surface of a (100) crystal plane and a second surface of one of {111} crystal planes. The method may further include performing a first selective epitaxial growth (SEG) process to form a base epitaxial pattern on the inner surface of the recess region at a process pressure in a range of about 50 Torr to about 300 Torr. The method may also include performing a second selective epitaxial growth (SEG) process to form a bulk epitaxial pattern on the base epitaxial pattern.

Abstract translation: 提供了包括源漏应力源的半导体器件及其制造方法。 所述方法可以包括在栅极图案侧的基板中形成凹陷区域，并且凹部区域的内表面可以包括（100）晶面的第一表面和{111}晶体之一的第二表面 飞机 该方法还可以包括执行第一选择性外延生长（SEG）工艺，以在约50托至约300托的范围内的工艺压力下在凹陷区的内表面上形成基底外延图案。 该方法还可以包括执行第二选择性外延生长（SEG）工艺以在基底外延图案上形成体外延图案。

公开(公告)号：US20180231226A1

公开(公告)日：2018-08-16

申请号：US15652043

申请日：2017-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Hoe KOO ,  Il Seok LEE ,  Dong Hyuk KIM

IPC: F21V23/04 ,  H05B33/08

Abstract: An LED lighting device is provided. The LED lighting device may include a light source configured to emit a light of first color temperature, second color temperature, and third color temperature and a switch electrically connected to the light source to control the light source to emit the lights of the first color temperature, the second color temperature, and the third color temperature, respectively. The light source includes a first light source configured to emit a light of a first color temperature, and a second light source configured to emit a light of a second color temperature that is different from the first color temperature, and the light source emits a light of a third color temperature between the first and second color temperatures when the switch parallel-connects the first light source and the second light source.