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    SEMICONDUCTOR DEVICES
    1.
    发明申请
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20200020691A1

    公开(公告)日：2020-01-16

    申请号：US16229207

    申请日：2018-12-21

    申请人： Samsung Electronics Co., Ltd.

    发明人： Soo-Jung CHOI ,  Dong-Hyun ROH ,  Sung-Soo KIM ,  Gyu-Hwan AHN ,  Sang-Jin HYUN

    IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L21/308

    摘要： A semiconductor device may include active fins spaced apart from each other by a recess therebetween, each of the active fins protruding from an upper surface of a substrate, an isolation structure including a liner on a lower surface and a sidewall of a lower portion of the recess and a blocking pattern on the liner, the blocking pattern filling a remaining portion of the lower portion of the recess and including a nitride, a carbide or polysilicon, a gate electrode structure on the active fins and the isolation structure, and a source/drain layer on a portion of each of the active fins adjacent to the gate electrode structure.

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20150364574A1

    公开(公告)日：2015-12-17

    申请号：US14579627

    申请日：2014-12-22

    申请人： Samsung Electronics Co., Ltd.

    发明人： Ju-Youn KIM ,  Dong-Hyun ROH ,  Sang-Duk PARK ,  Il-Young YOON ,  Jeong-Nam HAN ,  Jong-Mil YOUN

    IPC分类号： H01L29/66 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/3213 ,  H01L27/088 ,  H01L21/02 ,  H01L21/311

    CPC分类号： H01L29/66545 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/823425 ,  H01L21/823431 ,  H01L21/823437 ,  H01L27/088 ,  H01L27/0886 ,  H01L29/0642 ,  H01L29/66636

    摘要： In a method of manufacturing a semiconductor device, a dummy gate structure including a dummy gate insulation layer pattern, a dummy gate electrode and a gate mask sequentially stacked are formed on a substrate. An interlayer insulating layer including tonen silazane (TOSZ) is formed on the substrate to cover the dummy gate structure. An upper portion of the interlayer insulating layer is planarized until a top surface of the gate mask is exposed to form an interlayer insulating layer pattern. The exposed gate mask, and the dummy gate electrode and the dummy gate insulation layer pattern under the gate mask are removed to form an opening exposing a top surface of the substrate. The dummy gate insulation layer pattern is removed using an etchant including hydrogen fluoride (HF), but the interlayer insulating layer pattern remains. A gate structure is formed to fill the opening.

    摘要翻译： 在制造半导体器件的方法中，在衬底上形成包括虚拟栅极绝缘层图案，虚拟栅极电极和栅极掩模的虚拟栅极结构。 在基板上形成包含蒙片硅氮烷（TOSZ）的层间绝缘层，以覆盖虚拟栅极结构。 层间绝缘层的上部被平坦化，直到露出栅极掩模的顶表面以形成层间绝缘层图案。 除去栅极掩模下的露出的栅极掩模，伪栅极电极和伪栅极绝缘层图案，以形成露出衬底顶表面的开口。 使用包括氟化氢（HF）的蚀刻剂去除伪栅极绝缘层图案，但是残留层间绝缘层图案。 形成浇口结构以填充开口。

    ELECTRONIC DEVICE AND METHOD OF DISPLAYING SITUATION INFORMATION
    5.
    发明申请
    ELECTRONIC DEVICE AND METHOD OF DISPLAYING SITUATION INFORMATION 审中-公开
    电子设备和显示状态信息的方法

    公开(公告)号：US20160007148A1

    公开(公告)日：2016-01-07

    申请号：US14754876

    申请日：2015-06-30

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sang-Mi KIM ,  Mu-Woong LEE ,  Yoon-Kyong LEE ,  Jae-Won LEE ,  Seok-Jin CHANG ,  Brian CHO ,  Dong-Hyun ROH

    IPC分类号： H04W4/02

    CPC分类号： H04W4/029

    摘要： Disclosed is a method of operating an electronic device. The electronic device includes a display and a processor, which is configured to execute the method including identifying a current position of the electronic device, detecting one or more preset electronic devices based on the identified current position, and displaying the one or more preset electronic devices.

    摘要翻译： 公开了一种操作电子设备的方法。 电子设备包括显示器和处理器，其被配置为执行所述方法，包括识别电子设备的当前位置，基于所识别的当前位置检测一个或多个预设电子设备，以及显示所述一个或多个预设电子设备 。

    METHOD AND APPARATUS FOR PROVIDING SEMANTIC LOCATION IN ELECTRONIC DEVICE
    6.
    发明申请
    METHOD AND APPARATUS FOR PROVIDING SEMANTIC LOCATION IN ELECTRONIC DEVICE 审中-公开
    用于在电子设备中提供语义位置的方法和装置

    公开(公告)号：US20130339383A1

    公开(公告)日：2013-12-19

    申请号：US13916056

    申请日：2013-06-12

    申请人： Samsung Electronics Co. Ltd.

    发明人： Moon-Bae SONG ,  Dong-Hyun ROH ,  Kyung-Sub MIN

    IPC分类号： G06F17/30

    摘要： A location recognition method is provided. The method includes determining location search targets in a DataBase (DB) including location information on the basis of first network information, selecting at least one place from the determined location search targets on the basis of second network information, measuring a relative distance by using first signal strength and second signal strength with respect to the selected at least one place, and recognizing the selected at least one place as a current location on the basis of the relative distance. Accordingly, various personalized service scenarios can be provided to the user.

    摘要翻译： 提供了位置识别方法。 该方法包括基于第一网络信息确定包括位置信息的数据库（DB）中的位置搜索目标，基于第二网络信息从所确定的位置搜索目标中选择至少一个地点，通过使用第一网络信息来测量相对距离 相对于所选择的至少一个地方的信号强度和第二信号强度，并且基于相对距离将所选择的至少一个地点识别为当前位置。 因此，可以向用户提供各种个性化服务场景。