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    IMAGE SENSOR SAMPLING PIXEL SIGNAL MULTIPLE TIMES AND AN OPERATING METHOD OF THE IMAGE SENSOR
    2.
    发明申请
    IMAGE SENSOR SAMPLING PIXEL SIGNAL MULTIPLE TIMES AND AN OPERATING METHOD OF THE IMAGE SENSOR 有权

    公开(公告)号：US20230016998A1

    公开(公告)日：2023-01-19

    申请号：US17824607

    申请日：2022-05-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yunhong Kim ,  Heesung Chae ,  Yunhwan Jung ,  Haesick Sul

    IPC: H04N5/378 ,  H04N5/3745 ,  H04N5/369

    Abstract: An image sensor for sampling a pixel signal a plurality of times during a readout time includes an analog comparator configured to compare a signal level of the pixel signal with a signal level of a target ramp signal that is any one of a plurality of ramp signals, a counter configured to output counting data based on a comparison result of the analog comparator, and a digital comparing circuit configured to compare a binary value of a target reference code corresponding to the target ramp signal with a binary value of the counting data and determine whether to output a digital signal corresponding to the counting data to a data output circuit based on a result of the comparison between the binary value of the counting data and the binary value of the target reference code.

    Image sensor
    3.
    发明授权
    Image sensor 有权

    公开(公告)号：US11798963B2

    公开(公告)日：2023-10-24

    申请号：US17119330

    申请日：2020-12-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yunhong Kim ,  Yunhwan Jung ,  Heesung Chae

    IPC: H01L27/146 ,  H04N25/75

    CPC classification number: H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N25/75

    Abstract: An image sensor includes a substrate including an active pixel region and an inactive pixel region, having a smaller area than the active pixel region; a plurality of active pixels in the active pixel region, each of the plurality of active pixels including a first transfer transistor, a first reset transistor, a first driving transistor, and a first selection transistor; and a plurality of inactive pixels in the inactive pixel region, each of the plurality of inactive pixels including a second transfer transistor, a second reset transistor, a second driving transistor, a second selection transistor, and a switch transistor connected to a node between the second driving transistor and the second select transistor. The plurality of switch transistors, included in the plurality of inactive pixels, are connected to each other by a connection wiring.

    Image sensor sampling pixel signal multiple times and an operating method of the image sensor
    5.
    发明授权
    Image sensor sampling pixel signal multiple times and an operating method of the image sensor 有权

    公开(公告)号：US11924569B2

    公开(公告)日：2024-03-05

    申请号：US17824607

    申请日：2022-05-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yunhong Kim ,  Heesung Chae ,  Yunhwan Jung ,  Haesick Sul

    IPC: H04N25/75 ,  H04N25/701 ,  H04N25/772

    CPC classification number: H04N25/75 ,  H04N25/701 ,  H04N25/772

    Abstract: An image sensor for sampling a pixel signal a plurality of times during a readout time includes an analog comparator configured to compare a signal level of the pixel signal with a signal level of a target ramp signal that is any one of a plurality of ramp signals, a counter configured to output counting data based on a comparison result of the analog comparator, and a digital comparing circuit configured to compare a binary value of a target reference code corresponding to the target ramp signal with a binary value of the counting data and determine whether to output a digital signal corresponding to the counting data to a data output circuit based on a result of the comparison between the binary value of the counting data and the binary value of the target reference code.

    IMAGE SENSOR
    6.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20220182565A1

    公开(公告)日：2022-06-09

    申请号：US17681141

    申请日：2022-02-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung-Min Kim ,  Heesung Chae ,  Jaeyoung Bae ,  Sukki Yoon

    IPC: H04N5/357 ,  H04N3/14 ,  H04N5/3745

    Abstract: An image sensor compensates for noise. The image sensor includes a pixel array that includes a common monitor output line, a first monitoring pixel outputting a first monitoring signal, a second monitoring pixel outputting a second monitoring signal, and an active pixel configured to output a sensing signal based on an incident light. The image circuit also includes a binning circuit that receives the first and second monitoring signals through the common monitor output line and generates an average monitoring signal by performing binning on the first and second monitoring signals, and an analog-to-digital converter that detects an alternating current (AC) component of the average monitoring signal and couples the sampled AC component of the average monitoring signal to the sensing signal, thereby compensating for noise.

    Image sensor having reduced parasitic capacitance
    10.
    发明授权
    Image sensor having reduced parasitic capacitance 有权

    公开(公告)号：US11606523B2

    公开(公告)日：2023-03-14

    申请号：US16890422

    申请日：2020-06-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sunyool Kang ,  Yongjun Cho ,  Yunhwan Jung ,  Heesung Chae ,  Kyungmin Kim ,  Haesick Sul ,  Sukki Yoon

    IPC: H04N5/3745 ,  H01L27/146

    Abstract: An image sensor, including a pixel array including a plurality of pixels connected to row lines extending in a first direction and column lines extending in a second direction intersecting the first direction; a ramp voltage generator configured to output a ramp voltage; a sampling circuit including a plurality of comparators, each comparator of the plurality of comparators having a first input terminal connected to a column of the column lines and a second input terminal configured to receive the ramp voltage; and an analog-to-digital converter configured to convert an output of the plurality of comparators to a digital signal, wherein the plurality of comparators include a first comparator connected to a first column line, and a second comparator connected to a second column line adjacent to the first column line in the first direction, wherein each of the first comparator and the second comparator includes a first transistor and a second transistor disposed sequentially in the second direction, and wherein a gap between the first transistor of the first comparator and the second transistor of the first comparator is different from a gap between the first transistor of the second comparator and the second transistor of the second comparator.

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