公开(公告)号：US20230324791A1

公开(公告)日：2023-10-12

申请号：US18313555

申请日：2023-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyung LEE ,  Sumin KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Giyoung SONG ,  Sukkoo HONG ,  Yoonhyun KWAK ,  Youngmin NAM ,  Byunghee SOHN ,  Sunyoung LEE ,  Aram JEON ,  Sungwon CHOI

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  C07C309/12 ,  C07D333/76 ,  C07C381/12

CPC classification number: G03F7/0045 ,  C07C309/12 ,  C07C381/12 ,  C07D333/76 ,  G03F7/038 ,  G03F7/039 ,  C07C2603/74

Abstract: Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1:





wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.

公开(公告)号：US20210255544A1

公开(公告)日：2021-08-19

申请号：US17003414

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan KIM ,  Suk Koo HONG ,  Su Min KIM ,  Ju-Young KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039

Abstract: A resist composition including a polymer; a photoacid generator; and a material represented by Formula 1:

公开(公告)号：US20190156788A1

公开(公告)日：2019-05-23

申请号：US16194876

申请日：2018-11-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongjin LEE ,  Hyelin LEE ,  Juhyeon PARK ,  Kiwon KIM ,  Youngho CHO ,  Mooyoung KIM

IPC: G09G5/12 ,  G06F3/14 ,  G09G5/00 ,  G06F3/0488

CPC classification number: G09G5/12 ,  G06F3/04817 ,  G06F3/04886 ,  G06F3/1423 ,  G06F3/1454 ,  G06F9/452 ,  G06F2203/04803 ,  G09G5/006 ,  G09G2354/00 ,  H04M1/72527

Abstract: An electronic device for configuring an input interface and a method therefor are provided. The electronic device includes a memory, a display, and at least one processor electrically connected to the memory and the display, wherein the memory includes instructions that, when executed, enable the at least one processor to perform a connection with an external electronic device, transmit information generated in the electronic device to the external electronic device on the basis of the connection so that the generated information is displayed on a display of the external electronic device, and provide an input interface for controlling the information displayed on the external electronic device via the display when the generated information is displayed on the display of the external electronic device.

公开(公告)号：US20210263411A1

公开(公告)日：2021-08-26

申请号：US16991281

申请日：2020-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan KIM ,  Su Min KIM ,  Ju-Young KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI ,  Suk Koo HONG

IPC: G03F7/004 ,  C08L25/06 ,  C07C381/12 ,  C08L35/00

Abstract: A resist composition including a polymer; and a compound represented by Formula 1, in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,

公开(公告)号：US20210240079A1

公开(公告)日：2021-08-05

申请号：US17003373

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Juhyeon PARK ,  Su Min KIM ,  Yechan KIM ,  Ju-Young KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Hyunji SONG ,  Songse YI ,  Suk Koo HONG

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/38 ,  H01L21/027 ,  H01L21/3213 ,  G03F7/20

Abstract: A photolithography method and a method of manufacturing a semiconductor device, the photolithography method including applying a composition on a substrate to form a photoresist layer; performing an exposing process using extreme ultraviolet radiation (EUV) on the photoresist layer; and developing the photoresist layer to form photoresist patterns, wherein the composition includes a photosensitive resin, a photo-acid generator, a photo decomposable quencher, an additive, and a solvent, and the additive is a compound represented by the following Formula 4A: in Formula 4A, R1 to R5 are each independently hydrogen or iodine, at least one of R1 to R5 being iodine.

公开(公告)号：US20240168381A1

公开(公告)日：2024-05-23

申请号：US18377365

申请日：2023-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jincheol PARK ,  Seonghyeon AHN ,  Honggu IM ,  Sungmin KO ,  Juyoung KIM ,  Juhyeon PARK ,  Naery YU

IPC: G03F7/022 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0226 ,  G03F7/0045 ,  G03F7/2004

Abstract: A photoresist composition for extreme ultraviolet (EUV) radiation and a method of manufacturing a semiconductor device, the photoresist composition includes a polymer resin; a photoacid generator; and a photoreactive additive that includes at least two diazonaphthoquinone (DNQ) groups, wherein the at least two DNQ groups are represented by Formula 1 or Formula 2 described herein.

公开(公告)号：US20230296983A1

公开(公告)日：2023-09-21

申请号：US18154184

申请日：2023-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hwan PARK ,  Juhyeon PARK ,  Hyunwoo KIM ,  Suk Koo HONG

IPC: G03F7/039 ,  C08F212/14 ,  G03F7/038

CPC classification number: G03F7/0397 ,  C08F212/22 ,  G03F7/0382 ,  C08F2800/10

Abstract: An extreme ultraviolet (EUV) photosensitive polymer includes a first repeating unit represented by Chemical Formula 1.






(in Chemical Formula 1, R1 is a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, a C6 to C18 aryl group, a haloaryl group, a C7 to C18 arylalkyl group, a C7 to C18 alkylaryl group, or a C6 to C18 haloaryl group, and R2 is a direct bond, a C1 to C10 alkylene group, a C2 to C10 alkenyl group, a C2 to C10 alkynyl group, a C6 to C18 aryl group, a C7 to C18 arylalkyl group, or a C7 to C18 alkylaryl group).

公开(公告)号：US20230288806A1

公开(公告)日：2023-09-14

申请号：US18098233

申请日：2023-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiyup KIM ,  Hyunwoo KIM ,  Sung Hwan PARK ,  Juhyeon PARK ,  Giyoung SONG

IPC: G03F7/039 ,  G03F7/004 ,  C08F220/28 ,  C08F216/10 ,  H01L21/027

CPC classification number: G03F7/0397 ,  C08F216/10 ,  C08F220/283 ,  G03F7/0045 ,  H01L21/0274

Abstract: A photosensitive polymer includes a first repeating unit represented by Formula 1 below:





wherein, in Formula 1, R1 is a hydrogen atom or a methyl group, R2 is a substituted or unsubstituted C1 to C30 acid-labile hydrocarbylene group having a tertiary carbon atom, R3 is a C1 to C10 linear or branched alkyl group, a C3 to C30 tertiary alicyclic group, a C6 to C20 aryl group, a C2 to C20 heteroaryl group, a C7 to C20 arylalkyl group, or a C2 to C20 heteroarylalkyl group, and n is 0 or 1. To manufacture an integrated circuit (IC) device, a change in the polarity of the photosensitive polymer is induced by causing a multi-step deprotection reaction of the first repeating unit.

公开(公告)号：US20230120542A1

公开(公告)日：2023-04-20

申请号：US18080348

申请日：2022-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sumin KIM ,  Hyunwoo KIM ,  Sukkoo HONG ,  Yechan KIM ,  Juyoung KIM ,  Jinjoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI

IPC: G03F7/004 ,  C07C381/12 ,  G03F7/039 ,  C07C309/12

Abstract: A photo-decomposable compound includes an anion component including an adamantyl group and a cation component including a C5 to C40 cyclic hydrocarbon group and forming a complex with the anion component. At least one of the adamantyl group and the cyclic hydrocarbon group has a substituent, which decomposes by acid and generates an alkali soluble group. The substituent includes an acid-labile protecting group. A photoresist composition includes a chemically amplified polymer, the photo-decomposable compound, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed using the photoresist composition on a feature layer, a first area of the photoresist film is exposed to generate a plurality of acids from the photo-decomposable compound in the first area, the chemically amplified polymer is deprotected due to the plurality of acids, and the first area is removed to form a photoresist pattern.

公开(公告)号：US20220171284A1

公开(公告)日：2022-06-02

申请号：US17238355

申请日：2021-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyung LEE ,  Sumin KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Giyoung SONG ,  Sukkoo HONG ,  Yoonhyun KWAK ,  Youngmin NAM ,  Byunghee SOHN ,  Sunyoung LEE ,  Aram JEON ,  Sungwon CHOI

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  C07C381/12 ,  C07C309/12 ,  C07D333/76

Abstract: Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1: wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.