公开(公告)号：US20160027495A1

公开(公告)日：2016-01-28

申请号：US14742821

申请日：2015-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Ki KIM ,  Hyung-Sik YOU

IPC: G11C11/4074 ,  G11C11/4094 ,  G11C11/4091 ,  G11C11/406

CPC classification number: G11C11/4074 ,  G11C7/065 ,  G11C7/08 ,  G11C11/406 ,  G11C11/40611 ,  G11C11/4091 ,  G11C11/4094 ,  G11C2211/4065 ,  G11C2211/4068

Abstract: A method of operating a memory device may include: providing a first power supply voltage to a sense amplifier during a first time interval, the first time interval being between a first time at which a voltage is provided to a first bit line, and a second time at which a pre-charge command is received; and providing a second power supply voltage to the sense amplifier during a second time interval, during which the word line is enabled after the pre-charge command is received. The second power supply voltage may be greater than the first power supply voltage.

Abstract translation: 操作存储器件的方法可以包括：在第一时间间隔期间向感测放大器提供第一电源电压，第一时间间隔在提供电压到第一位线的第一时间和第二时间间隔之间 接收预充电命令的时间; 以及在第二时间间隔期间向读出放大器提供第二电源电压，在此期间，在接收到预充电命令之后，字线被使能。 第二电源电压可以大于第一电源电压。

公开(公告)号：US20130241044A1

公开(公告)日：2013-09-19

申请号：US13668852

申请日：2012-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Ki KIM ,  Jung-Do LEE ,  Yang-Hoon AHN ,  Sun-Hye LEE ,  Dae-Young CHOI

IPC: H01L23/48 ,  H01L23/02

CPC classification number: H01L23/36 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/4334 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/05599 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: According to example embodiments, a semiconductor package includes a first semiconductor chip is on a first substrate, a protective layer directly on the first semiconductor chip, and an encapsulant covering an upper surface of the first substrate. The encapsulant may contact side surfaces of the first semiconductor chip and the protective layer.

Abstract translation: 根据示例性实施例，半导体封装包括在第一衬底上的第一半导体芯片，直接在第一半导体芯片上的保护层，以及覆盖第一衬底的上表面的密封剂。 密封剂可以接触第一半导体芯片和保护层的侧表面。