公开(公告)号：US20130241044A1

公开(公告)日：2013-09-19

申请号：US13668852

申请日：2012-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Ki KIM ,  Jung-Do LEE ,  Yang-Hoon AHN ,  Sun-Hye LEE ,  Dae-Young CHOI

IPC: H01L23/48 ,  H01L23/02

CPC classification number: H01L23/36 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/4334 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/05599 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: According to example embodiments, a semiconductor package includes a first semiconductor chip is on a first substrate, a protective layer directly on the first semiconductor chip, and an encapsulant covering an upper surface of the first substrate. The encapsulant may contact side surfaces of the first semiconductor chip and the protective layer.

Abstract translation: 根据示例性实施例，半导体封装包括在第一衬底上的第一半导体芯片，直接在第一半导体芯片上的保护层，以及覆盖第一衬底的上表面的密封剂。 密封剂可以接触第一半导体芯片和保护层的侧表面。

公开(公告)号：US20140246786A1

公开(公告)日：2014-09-04

申请号：US14279776

申请日：2014-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Hun KIM ,  Jin-Woo PARK ,  Dae-Young CHOI ,  Mi-Yeon KIM ,  Sun-Hye LEE

IPC: H01L23/522

CPC classification number: H01L23/5226 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/14 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/1005 ,  H01L2225/1023 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2924/01019 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2924/00012

Abstract: Provided is a method of forming a package-on-package. An encapsulation is formed to cover a wafer using a wafer level molding process. The wafer includes a plurality of semiconductor chips and a plurality of through silicon vias (TSVs) passing through the semiconductor chips. The encapsulant may have openings aligned with the TSVs. The encapsulant and the semiconductor chips are divided to form a plurality of semiconductor packages. Another semiconductor package is stacked on one selected from the semiconductor packages. The other semiconductor package is electrically connected to the TSVs.

Abstract translation: 提供了一种形成封装封装的方法。 使用晶片级成型工艺形成覆盖晶片的封装。 晶片包括多个半导体芯片和穿过半导体芯片的多个通孔硅通孔（TSV）。 密封剂可以具有与TSV对齐的开口。 密封剂和半导体芯片被分割以形成多个半导体封装。 另一个半导体封装堆叠在从半导体封装中选择的一个上。 另一个半导体封装电连接到TSV。