Semiconductor device and method of fabricating the same
    3.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US09252058B2

    公开(公告)日:2016-02-02

    申请号:US14308745

    申请日:2014-06-19

    Abstract: A method of manufacturing a semiconductor device, a semiconductor device and systems incorporating the same include transistors having a gate metal doped with impurities. An altered work function of the transistor may alter a threshold voltage of the transistor. In certain embodiments, a gate metal of a first MOSFET is doped with impurities. A gate metal of a second MOSFET may be left undoped, doped with the same impurities with a different concentration, and/or doped with different impurities. In some embodiments, the MOSFETs are FinFETs, and the doping may be a conformal doping.

    Abstract translation: 制造半导体器件的方法,半导体器件和结合其的系统包括掺杂有杂质的栅极金属的晶体管。 晶体管的改变的功函数可以改变晶体管的阈值电压。 在某些实施例中,第一MOSFET的栅极金属掺杂有杂质。 第二MOSFET的栅极金属可以不掺杂,掺杂有不同浓度的相同杂质和/或掺杂有不同杂质。 在一些实施例中,MOSFET是FinFET,并且掺杂可以是共形掺杂。

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20140302652A1

    公开(公告)日:2014-10-09

    申请号:US14308745

    申请日:2014-06-19

    Abstract: A method of manufacturing a semiconductor device, a semiconductor device and systems incorporating the same include transistors having a gate metal doped with impurities. An altered work function of the transistor may alter a threshold voltage of the transistor. In certain embodiments, a gate metal of a first MOSFET is doped with impurities. A gate metal of a second MOSFET may be left undoped, doped with the same impurities with a different concentration, and/or doped with different impurities. In some embodiments, the MOSFETs are FinFETs, and the doping may be a conformal doping

    Abstract translation: 制造半导体器件的方法,半导体器件和结合其的系统包括掺杂有杂质的栅极金属的晶体管。 晶体管的改变的功函数可以改变晶体管的阈值电压。 在某些实施例中,第一MOSFET的栅极金属掺杂有杂质。 第二MOSFET的栅极金属可以不掺杂,掺杂有不同浓度的相同杂质和/或掺杂有不同杂质。 在一些实施例中,MOSFET是FinFET,并且掺杂可以是共形掺杂

Patent Agency Ranking