公开(公告)号：US20170084471A1

公开(公告)日：2017-03-23

申请号：US15208787

申请日：2016-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongtaek LIM ,  Kangsoo KIM ,  Hojun KIM ,  Jeonghoon NAM ,  Sejun PARK

IPC: H01L21/67 ,  C23C16/50 ,  H01J37/32 ,  C23C16/455

CPC classification number: H01J37/3244 ,  C23C16/452 ,  C23C16/45512 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/32009

Abstract: A semiconductor device fabricating apparatus includes a gas mixer having an upper surface and a lower surface, each of the upper and lower surfaces has an elliptical plane, and a side surface connecting the upper and lower surfaces, a gas inlet pipe on an upper portion of the gas mixer, and a gas outlet pipe on a lower portion of the gas mixer.

公开(公告)号：US20160194756A1

公开(公告)日：2016-07-07

申请号：US14972598

申请日：2015-12-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongtaek LIM ,  Jeonghoon NAM ,  Chul PARK ,  Youngchae SEO ,  Jaihyung WON ,  Seungmoo LEE ,  Donghoon HAN

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45512 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45591

Abstract: A semiconductor processing apparatus includes a susceptor supporting a processing target, a gas box spaced apart from the susceptor, the gas box including a concave region facing an upper surface of the processing target, and an inclined surface at an outer side of the concave region, an inclination angle of the inclined surface of the gas box relative to an upper surface of the susceptor is more than 10° and less than 35°, and a shower head within the concave region of the gas box.

Abstract translation: 一种半导体处理装置，包括支撑处理对象的基座，与基座间隔开的气箱，包括面对加工对象的上表面的凹部的气体盒和凹部的外侧的倾斜面， 气箱的倾斜面相对于基座的上表面的倾斜角度大于10°且小于35°，以及在气箱的凹入区域内的喷头。

公开(公告)号：US20240392426A1

公开(公告)日：2024-11-28

申请号：US18430308

申请日：2024-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younseon WANG ,  Jeonghoon NAM ,  Youngkwon KIM ,  Hyunseo CHOI ,  Keonwoo KIM ,  Dougyong SUNG ,  Junho IM

IPC: C23C8/36 ,  C23C8/80 ,  C23C16/44 ,  H01J37/32

Abstract: A method of surface treatment, includes: providing a component in a first process chamber; generating fluorine plasma with a remote plasma source connected to the first process chamber; and forming a protective layer on a surface of the component by providing the fluorine plasma to the first process chamber, wherein the protective layer comprises magnesium fluoride, wherein a magnesium content of the component is about 0.5 wt % to about 5.5 wt %, and wherein a thickness of the protective layer is about 100 nm to about 300 nm.

公开(公告)号：US20230074307A1

公开(公告)日：2023-03-09

申请号：US17852628

申请日：2022-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanyeol PARK ,  Kyungnam KANG ,  Jeonghoon NAM ,  Sejin KYUNG ,  Daewee KONG ,  Taemin KIM

IPC: C23C16/458 ,  H01L21/687 ,  H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  C23C16/46 ,  H05B3/12 ,  H05B3/28

Abstract: A substrate support unit includes: a ceramic body having a surface for supporting a substrate, the ceramic body including aluminum nitride (AlN), a heat generating resistor disposed in the ceramic body, and including molybdenum (Mo), and a coating layer surrounding the heat generating resistor, and including molybdenum aluminum nitride (MoAlN).