公开(公告)号：USRE49963E1

公开(公告)日：2024-05-07

申请号：US17155615

申请日：2021-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan Kim ,  Gigwan Park ,  Junggun You ,  DongSuk Shin ,  Jin-Wook Kim

IPC: H01L29/78 ,  H01L21/8238 ,  H01L21/84 ,  H01L23/535 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66 ,  H10B10/00 ,  H01L27/12 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L21/823878 ,  H01L23/535 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/66545 ,  H01L29/66636 ,  H10B10/12 ,  H10B10/18 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/165

Abstract: A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

公开(公告)号：US10784376B2

公开(公告)日：2020-09-22

申请号：US16450193

申请日：2019-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan Kim ,  Gigwan Park ,  Junggun You ,  DongSuk Shin ,  Jin-Wook Kim

IPC: H01L29/78 ,  H01L21/8238 ,  H01L23/535 ,  H01L27/092 ,  H01L27/11 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66 ,  H01L27/12 ,  H01L21/84 ,  H01L29/165

Abstract: A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

公开(公告)号：USD736170S1

公开(公告)日：2015-08-11

申请号：US29512224

申请日：2014-12-17

Applicant: Samsung Electronics Co., Ltd.

Designer： Jin-Ie Ryu ,  Jin-Wook Kim ,  Ki-Hyun Yoon ,  Hong-Pyo Kim ,  Chi-Young Ahn

公开(公告)号：US10733995B2

公开(公告)日：2020-08-04

申请号：US15614001

申请日：2017-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Wook Kim ,  Jae-Hyung Kim ,  Gi-Ha Woo

IPC: G10L15/28 ,  G10L25/51 ,  G10L17/00 ,  G10L15/22 ,  H05B47/12 ,  G06F3/16

Abstract: A voice recognition electronic device is provided which includes a housing including a first face that faces a first direction, a second face that faces a second direction opposite to the first direction, a third face disposed between the first face and the second face, and a translucent cover that forms at least a portion of the third face, a voice reception unit disposed below the first face of the housing and including a plurality of microphones that receive a voice input from a user, a light source unit disposed inside the housing to emit light, a driving unit connected to the light source unit to control the light source unit to move according to a preset operation, and a control unit that controls the driving unit in response to the voice input of the user, which is delivered from the voice reception unit.

公开(公告)号：US11626501B2

公开(公告)日：2023-04-11

申请号：US17039083

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： In Yeal Lee ,  Ju Youn Kim ,  Jin-Wook Kim ,  Ju Hun Park ,  Deok Han Bae ,  Myung Yoon Um

IPC: H01L29/423 ,  H01L23/528 ,  H01L21/84 ,  H01L27/088 ,  H01L27/108 ,  H01L29/49 ,  H01L23/522 ,  H01L21/02

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, and a gate contact in the gate structure. The gate structure includes a gate electrode extending in a first direction and a gate capping pattern on the gate electrode. The gate contact is connected to the gate electrode. The gate electrode includes a protrusion extending along a boundary between the gate contact and the gate capping pattern.

公开(公告)号：US11296029B2

公开(公告)日：2022-04-05

申请号：US17007265

申请日：2020-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Youn Kim ,  Deok Han Bae ,  Jin-Wook Kim ,  Ju Hun Park ,  Myung Yoon Um ,  In Yeal Lee

IPC: H01L23/535 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L29/08 ,  H01L29/78 ,  H01L21/3213 ,  H01L21/768

Abstract: A semiconductor device includes an active pattern extending in a first horizontal direction on a substrate, a gate electrode extending in a second horizontal direction across the active pattern, and including a first portion, and a second portion protruding upward from the first portion in a vertical direction, a capping pattern extending in the second horizontal direction on the gate electrode, and a gate contact disposed on the second portion of the gate electrode, overlapping the active pattern, and penetrating the capping pattern to connect the gate electrode.

公开(公告)号：US11810957B2

公开(公告)日：2023-11-07

申请号：US17469361

申请日：2021-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juhun Park ,  Deokhan Bae ,  Jin-Wook Kim ,  Yuri Lee ,  Inyeal Lee ,  Yoonyoung Jung

IPC: H01L29/417 ,  H01L27/092 ,  H01L21/8238

CPC classification number: H01L29/41775 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0924

Abstract: Disclosed is a semiconductor device including a substrate including first and second active regions, a device isolation layer on the substrate and defining first and second active patterns, first and second gate electrodes running across the first and second active regions and aligned with each other, first and second source/drain patterns on the first and second active patterns, a first active contact connecting the first and second source/drain patterns to each other, and a gate cutting pattern between the first and second gate electrodes. An upper portion of the first active contact includes first and second upper dielectric patterns. The first active contact has a minimum width at a portion between the first and second upper dielectric patterns. A minimum width of the gate cutting pattern is a second width. A ratio of the first width to the second width is in a range of 0.8 to 1.2.

公开(公告)号：US10553693B2

公开(公告)日：2020-02-04

申请号：US15958061

申请日：2018-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se Ki Hong ,  Ju Youn Kim ,  Jin-Wook Kim ,  Tae Eung Yoon ,  Tae Won Ha ,  Jung Hoon Seo ,  Seul Gi Yun

IPC: H01L29/00 ,  H01L29/423 ,  H01L27/092 ,  H01L29/06 ,  H01L29/49 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having first and second active regions with a field insulating layer therebetween that contacts the first and second active regions, and a gate electrode on the substrate and traversing the first active region, the second active region, and the field insulating layer. The gate electrode includes a first portion over the first active region, a second portion over the second active region, and a third portion in contact with the first and second portions. The gate electrode includes an upper gate electrode having first through third thicknesses in the first through third portions, respectively, where the third thickness is greater than the first thickness, and smaller than the second thickness.

公开(公告)号：USD756945S1

公开(公告)日：2016-05-24

申请号：US29512070

申请日：2014-12-16

Applicant: Samsung Electronics Co., Ltd.

Designer： Jin-Wook Kim ,  Jin-Ie Ryu ,  Ki-Hyun Yoon

公开(公告)号：USD753618S1

公开(公告)日：2016-04-12

申请号：US29512230

申请日：2014-12-17

Applicant: Samsung Electronics Co., Ltd.

Designer： Jin-le Ryu ,  Jin-Wook Kim ,  Ki-Hyun Yoon ,  Hong-Pyo Kim ,  Chi-Young Ahn