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公开(公告)号：US11843053B2
公开(公告)日：2023-12-12
申请号：US17398550
申请日：2021-08-10
发明人： Su Jin Jung , Ki Hwan Kim , Sung Uk Jang , Young Dae Cho
IPC分类号： H01L29/06 , H01L29/786 , H01L29/423 , H01L29/66 , H01L21/02
CPC分类号： H01L29/78618 , H01L21/0259 , H01L29/0665 , H01L29/42392 , H01L29/66545 , H01L29/66553 , H01L29/66742 , H01L29/78696
摘要： A semiconductor device is provided. The semiconductor comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern and in contact with the plurality of sheet patterns, and a gate structure on opposing sides of the source/drain pattern in a second direction different from the first direction, the gate structure including a gate electrode on the plurality of sheet patterns, wherein the source/drain pattern includes an epitaxial region that comprises a semiconductor material and a cavity region that is inside the epitaxial region and that is surrounded by the semiconductor material.
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公开(公告)号：US20220181499A1
公开(公告)日：2022-06-09
申请号：US17398550
申请日：2021-08-10
发明人： Su Jin Jung , Ki Hwan Kim , Sung Uk Jang , Young Dae Cho
IPC分类号： H01L29/786 , H01L29/06 , H01L29/423 , H01L21/02 , H01L29/66
摘要： A semiconductor device is provided. The semiconductor comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern and in contact with the plurality of sheet patterns, and a gate structure on opposing sides of the source/drain pattern in a second direction different from the first direction, the gate structure including a gate electrode on the plurality of sheet patterns, wherein the source/drain pattern includes an epitaxial region that comprises a semiconductor material and a cavity region that is inside the epitaxial region and that is surrounded by the semiconductor material.
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公开(公告)号：US20220181459A1
公开(公告)日：2022-06-09
申请号：US17383022
申请日：2021-07-22
发明人： Young Dae Cho , Ki Hwan Kim , Sung Uk Jang , Su Jin Jung
IPC分类号： H01L29/423 , H01L29/786 , H01L29/06 , H01L29/08
摘要： An integrated circuit device includes a substrate having source and drain recesses therein that are lined with respective silicon-germanium liners and filled with doped semiconductor source and drain regions. A stacked plurality of semiconductor channel layers are provided, which are separated vertically from each other within the substrate by corresponding buried insulated gate electrode regions that extend laterally between the silicon-germanium liners. An insulated gate electrode is provided on an uppermost one of the plurality of semiconductor channel layers. The silicon-germanium liners may be doped with carbon.
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公开(公告)号：US11670716B2
公开(公告)日：2023-06-06
申请号：US17337759
申请日：2021-06-03
发明人： Sung Uk Jang , Young Dae Cho , Ki Hwan Kim , Su Jin Jung
IPC分类号： H01L29/78 , H01L29/08 , H01L29/786 , H01L29/423
CPC分类号： H01L29/7851 , H01L29/0847 , H01L29/42392 , H01L29/78696
摘要： A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.
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公开(公告)号：US09679978B2
公开(公告)日：2017-06-13
申请号：US15272456
申请日：2016-09-22
发明人： Ki Hwan Kim , Jung Gun You , Gi Gwan Park , Dong Suk Shin , Jin Wook Kim
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L29/417 , H01L27/088 , H01L29/78 , H01L29/45 , H01L29/66 , H01L21/8234
CPC分类号： H01L29/41791 , H01L21/823418 , H01L21/823431 , H01L21/823821 , H01L27/0886 , H01L27/0924 , H01L29/0673 , H01L29/456 , H01L29/66545 , H01L29/66795 , H01L29/7848 , H01L29/785
摘要： A semiconductor device includes a substrate having first and second regions, a first fin-type pattern and a second fin-type pattern formed in the first region and extending in a first direction, and a third fin-type pattern and a fourth fin-type pattern formed in the second region and extending in a third direction. A first source/drain is formed on the first fin-type pattern and a second source/drain region is formed on the second fin-type pattern. Each of first and second source/drains have a cross section defining a same convex polygonal shape. A third source/drain is formed on the third fin-type pattern and a fourth source/drain region is formed on the fourth fin-type pattern. Cross-sections of the third and fourth source/drains define different convex polygonal shapes from one another.
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公开(公告)号：USRE49963E1
公开(公告)日：2024-05-07
申请号：US17155615
申请日：2021-01-22
发明人： Ki Hwan Kim , Gigwan Park , Junggun You , DongSuk Shin , Jin-Wook Kim
IPC分类号： H01L29/78 , H01L21/8238 , H01L21/84 , H01L23/535 , H01L27/092 , H01L29/06 , H01L29/08 , H01L29/16 , H01L29/161 , H01L29/66 , H10B10/00 , H01L27/12 , H01L29/165
CPC分类号： H01L29/7848 , H01L21/823814 , H01L21/823821 , H01L21/823871 , H01L21/823878 , H01L23/535 , H01L27/0924 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/66545 , H01L29/66636 , H10B10/12 , H10B10/18 , H01L21/845 , H01L27/1211 , H01L29/165
摘要： A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.
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公开(公告)号：US20240063262A1
公开(公告)日：2024-02-22
申请号：US18127298
申请日：2023-03-28
发明人： Yong Uk Jeon , Kyung Ho Kim , Ki Hwan Kim , Kang Hun Moon , Cho Eun Lee
IPC分类号： H01L29/06 , H01L29/66 , H01L29/775 , H01L29/423 , H01L29/786 , H01L27/092
CPC分类号： H01L29/0673 , H01L29/66545 , H01L29/775 , H01L29/42392 , H01L29/78696 , H01L29/66553 , H01L27/092
摘要： A semiconductor device is provided. The semiconductor device includes: an active pattern extending in on a substrate; nanosheets stacked on the active pattern; a gate electrode on the active pattern and surrounding the nanosheets; a source/drain trench on the active pattern adjacent the gate electrode; and a source/drain region in the source/drain trench, The source/drain region includes: a first layer provided along a sidewall and a bottom surface of the source/drain trench, the first layer having a first n-type impurity doped therein; a second layer on the first layer in the source/drain trench, the second layer having germanium (Ge) doped therein; and a third layer filling a remaining portion of the source/drain trench on the second layer, the third layer having a second n-type impurity doped therein.
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公开(公告)号：US11031502B2
公开(公告)日：2021-06-08
申请号：US16708717
申请日：2019-12-10
发明人： Sung Uk Jang , Young Dae Cho , Ki Hwan Kim , Su Jin Jung
IPC分类号： H01L29/78 , H01L29/08 , H01L29/786 , H01L29/423
摘要： A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.
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公开(公告)号：US10784376B2
公开(公告)日：2020-09-22
申请号：US16450193
申请日：2019-06-24
发明人： Ki Hwan Kim , Gigwan Park , Junggun You , DongSuk Shin , Jin-Wook Kim
IPC分类号： H01L29/78 , H01L21/8238 , H01L23/535 , H01L27/092 , H01L27/11 , H01L29/06 , H01L29/08 , H01L29/16 , H01L29/161 , H01L29/66 , H01L27/12 , H01L21/84 , H01L29/165
摘要： A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.
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公开(公告)号：US11916123B2
公开(公告)日：2024-02-27
申请号：US17383022
申请日：2021-07-22
发明人： Young Dae Cho , Ki Hwan Kim , Sung Uk Jang , Su Jin Jung
IPC分类号： H01L29/423 , H01L29/08 , H01L29/06 , H01L29/786
CPC分类号： H01L29/42392 , H01L29/0847 , H01L29/78696
摘要： An integrated circuit device includes a substrate having source and drain recesses therein that are lined with respective silicon-germanium liners and filled with doped semiconductor source and drain regions. A stacked plurality of semiconductor channel layers are provided, which are separated vertically from each other within the substrate by corresponding buried insulated gate electrode regions that extend laterally between the silicon-germanium liners. An insulated gate electrode is provided on an uppermost one of the plurality of semiconductor channel layers. The silicon-germanium liners may be doped with carbon.
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