公开(公告)号：US20240055431A1

公开(公告)日：2024-02-15

申请号：US18222734

申请日：2023-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minjae JEONG ,  Jisu YU ,  Geonwoo NAM ,  Jungho DO ,  Hyeongyu YOU ,  Jaehee CHO

IPC: H01L27/092 ,  H01L23/528 ,  G06F30/392

CPC classification number: H01L27/0922 ,  H01L23/528 ,  G06F30/392

Abstract: An integrated circuit includes a first cell disposed in a first row and a second row, which are adjacent to each other and extend in a first direction, and including a plurality of first threshold voltage devices and at least one second cell disposed adjacent to the first cell in at least one of the first row and the second row and including at least one second threshold voltage device, wherein the plurality of first threshold voltage devices include at least one first device configured to perform a first function in the first row and at least one second device configured to perform a second function, which is different from the first function, in the second row.

公开(公告)号：US20220262785A1

公开(公告)日：2022-08-18

申请号：US17540345

申请日：2021-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisu YU ,  Jaewoo SEO ,  Hyeongyu YOU ,  Minjae JEONG

IPC: H01L27/02 ,  H01L23/528 ,  G06F30/392

Abstract: An integrated circuit (IC) includes: a plurality of gate electrodes extending in a first direction and arranged in a second direction that is orthogonal to the first direction; a plurality of first power lines extending in the first direction to supply power to the standard cell, and respectively placed to be adjacent to first sides of the gate electrodes; and a plurality of signal lines extending in the first direction to transfer an input signal or an output signal of the standard cell, and respectively placed to be adjacent to second sides of the gate electrodes.

公开(公告)号：US20230040733A1

公开(公告)日：2023-02-09

申请号：US17846606

申请日：2022-06-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisu YU ,  Woojin RIM ,  Jungho DO ,  Jaewoo SEO ,  Hyeongyu YOU ,  Minjae JEONG

IPC: H01L27/02 ,  H01L27/092 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238

Abstract: Provided is an integrated circuit including standard cells arranged over a plurality of rows. The standard cells may include: a plurality of functional cells each implemented as a logic circuit; and a plurality of filler cells including at least one first filler cell and at least one second filler cell that each include at least one pattern from among a back end of line (BEOL) pattern, a middle of line (MOL) pattern, and a front end of line (FEOL) pattern, and wherein the at least one first filler cell and the at least one second filler cell have a same size as each other, and a density of one of the at least one pattern of the at least one first filler cell is different from a density of one of the at least one pattern of the at least one second filler cell.

公开(公告)号：US20220114320A1

公开(公告)日：2022-04-14

申请号：US17458948

申请日：2021-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisu YU ,  Jaewoo SEO ,  Hyeongyu YOU ,  Sanghoon BAEK ,  Jonghoon JUNG

IPC: G06F30/392 ,  H01L27/02 ,  H01L23/50

Abstract: An integrated circuit is provided. The integrated circuit includes a first cell that has a first height and is arranged in a first row which extends in a first direction; a second cell that has a second height and is arranged in a second row which extends in the first direction and is adjacent to the first row, wherein the second cell is adjacent to the first cell in a second direction perpendicular to the first direction; and a power line that extends in the first direction, is arranged on a boundary between the first cell and the second cell, and is configured to supply power to the first cell and the second cell. The first cell overlaps a first width of the power line along the second direction and the second cell overlaps a second width of the power line along the second direction, and the first width and the second width are different from each other.

公开(公告)号：US20210184038A1

公开(公告)日：2021-06-17

申请号：US16893549

申请日：2020-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungman Lim ,  Jaeho Park ,  Sanghoon Baek ,  Jisu YU ,  Hyeongyu You ,  Seungyoung Lee

IPC: H01L29/78 ,  H01L23/522

Abstract: A semiconductor device includes first and second active patterns, a first gate structure, first and second channels, and first and second source/drain layers. The first and second active patterns extend in a first direction, and are spaced apart in a second direction. The first gate structure extends in the second direction on the first and second active patterns. The first channels are spaced apart in a third direction on the first active pattern. The second channels are spaced apart in the third direction on the second active pattern. The first source/drain layer having a first conductivity type is formed at a side of the first gate structure to contact the first channels. The second source/drain layer having a second conductivity type is formed at a side of the first gate structure to contact the second channels. Widths in the second direction of the first and second channels are different.

公开(公告)号：US20240332305A1

公开(公告)日：2024-10-03

申请号：US18743961

申请日：2024-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon BAEK ,  Jungho DO ,  Jaewoo SEO ,  Jisu YU

IPC: H01L27/118 ,  H01L23/48 ,  H01L27/02

CPC classification number: H01L27/11807 ,  H01L23/481 ,  H01L27/0207 ,  H01L2027/11829 ,  H01L2027/11864 ,  H01L2027/11881

Abstract: A semiconductor device includes a first standard cell disposed on a substrate in a first row and having a first cell height; a second standard cell disposed on the substrate in a second row, adjacent to the first row, second standard cell having a second cell height, different from the first cell height; and a power line extending in a first direction along a boundary between the first standard cell and the second standard cell.

公开(公告)号：US20230335559A1

公开(公告)日：2023-10-19

申请号：US18336754

申请日：2023-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon BAEK ,  Jungho DO ,  Jaewoo SEO ,  Jisu YU

IPC: H01L27/118 ,  H01L27/02 ,  H01L23/48

CPC classification number: H01L27/11807 ,  H01L27/0207 ,  H01L23/481 ,  H01L2027/11864 ,  H01L2027/11881 ,  H01L2027/11829

Abstract: A semiconductor device includes a first standard cell disposed on a substrate in a first row and having a first cell height; a second standard cell disposed on the substrate in a second row, adjacent to the first row, second standard cell having a second cell height, different from the first cell height; and a power line extending in a first direction along a boundary between the first standard cell and the second standard cell.

公开(公告)号：US20230186982A1

公开(公告)日：2023-06-15

申请号：US18164199

申请日：2023-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yeop BAECK ,  Tae-Hyung KIM ,  Daeyoung MOON ,  Dong-Wook SEO ,  Inhak LEE ,  Hyunsu CHOI ,  Taejoong SONG ,  Jae-Seung CHOI ,  Jung-Myung Kang ,  Hoon KIM ,  Jisu YU ,  Sun-Yung JANG

IPC: G11C11/419 ,  G11C7/08 ,  H10B10/00 ,  H01L23/528 ,  H01L27/092

CPC classification number: G11C11/419 ,  G11C7/08 ,  H10B10/12 ,  H10B10/18 ,  H01L23/5286 ,  H01L27/092

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

公开(公告)号：US20220300693A1

公开(公告)日：2022-09-22

申请号：US17669631

申请日：2022-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungho DO ,  Jaewoo SEO ,  Sanghoon BAEK ,  Jisu YU ,  Hyeongyu YOU ,  Minjae JEONG

IPC: G06F30/394 ,  G06F30/392

Abstract: An integrated circuit includes a first cell including a first lower pattern extending in a first direction along a first track in a first wiring layer; and a second cell including a second lower pattern that extends in the first direction along the first track in the first wiring layer, and is a minimum space of the first wiring layer or farther apart from the first lower pattern, wherein the first lower pattern corresponds to a pin of the first cell, and the second lower pattern is farther apart from a boundary between the first cell and the second cell than the first lower pattern is.

公开(公告)号：US20240128159A1

公开(公告)日：2024-04-18

申请号：US18367549

申请日：2023-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minjae JEONG ,  Jaehee CHO ,  Geonwoo NAM ,  Jungho DO ,  Jisu YU ,  Hyeongyu YOU ,  Seungyoung LEE

IPC: H01L23/48 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/481 ,  H01L21/823807 ,  H01L21/823871 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: An integrated circuit including a standard cell including: a metal layer including a pattern extending in a first horizontal direction and a plurality of tracks spaced apart from one another in a second horizontal direction, wherein the plurality of tracks include a plurality of cell tracks and one power distribution network (PDN) track, wherein cell patterns are formed on the plurality of cell tracks, and a PDN pattern or a routing pattern is formed on the one power distribution network (PDN) track, wherein a first pattern is spaced apart from a cell boundary of the standard cell by a first length and is formed on a first cell track among the plurality of cell tracks, and wherein a second pattern is spaced apart from a cell boundary of the standard cell by a second length and is formed on a second cell track among the plurality of cell tracks.