-
公开(公告)号：US20140045288A1
公开(公告)日：2014-02-13
申请号：US13965846
申请日：2013-08-13
发明人： Ki Seok KIM , Je Won KIM , Ju Bin SEO , Seong Seok YANG , Sang Seok LEE , Joon Sub LEE , Jin Bock LEE
IPC分类号： H01L33/58
CPC分类号： H01L33/58 , H01L33/0095 , H01L2933/0091
摘要： A method of manufacturing a semiconductor light emitting device includes preparing a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween, forming a plurality of seeds on at least one surface of the light emitting structure, and forming a plurality of dome-shaped protrusions by forming optical waveguide groups from the plurality of respective seeds and combining the optical waveguide groups.
摘要翻译： 一种制造半导体发光器件的方法包括制备包括第一和第二导电类型半导体层和介于其间的有源层的发光结构，在发光结构的至少一个表面上形成多个晶种，并形成多个 通过从多个种子形成光波导组合并组合光波导组，从而形成圆顶形突起。
-
公开(公告)号：US20200075524A1
公开(公告)日：2020-03-05
申请号：US16356224
申请日：2019-03-18
发明人： Ju Bin SEO , Dong Hoon LEE , Ju Il CHOI , Su Jeong PARK , Dong Chan LIM
摘要： A semiconductor device including a substrate including a first conductive pad on a first surface thereof, at least one first bump structure on the first conductive pad, the first bump structure including a first connecting member and a first delamination prevention layer, the first delamination prevention layer on the first connecting member and having a greater hardness than the first connecting member, and a first encapsulant above the first surface of the substrate and surrounding the first bump structure may be provided.
-
公开(公告)号：US20150102365A1
公开(公告)日：2015-04-16
申请号：US14338174
申请日：2014-07-22
发明人： Nam Goo CHA , Hyun Seong KUM , Ju Bin SEO , Dong Hoon LEE
IPC分类号： H01L27/15
CPC分类号： H01L33/24 , H01L33/08 , H01L33/18 , H01L33/385
摘要： A nanostructure semiconductor light emitting device includes a base layer, an insulating layer and a plurality of light emitting nanostructures. The base layer is formed of a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. Each of the light emitting nanostructures is disposed on the exposed regions of the base layer and includes nanocore formed of a first conductivity type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on side surfaces of the nanocore. Upper surfaces of the light emitting nanostructures are non-planar and contain portions free of the second conductivity-type semiconductor layer in order to prevent light emissions during device driving.
摘要翻译： 纳米结构半导体发光器件包括基底层，绝缘层和多个发光纳米结构。 基层由第一导电型半导体形成。 绝缘层设置在基底层上并具有多个开口，基底层的区域暴露在该开口中。 每个发光纳米结构设置在基底层的暴露区域上，并且包括由第一导电型半导体形成的纳米孔，以及顺序地设置在纳米孔的侧表面上的有源层和第二导电类型半导体层。 发光纳米结构的上表面是非平面的，并且包含不含第二导电型半导体层的部分，以便防止器件驱动期间的光发射。
-
公开(公告)号：US20230282528A1
公开(公告)日：2023-09-07
申请号：US17897729
申请日：2022-08-29
发明人： Ju Bin SEO , Su Jeong PARK , Seok Ho KIM , Kwang Jin MOON
CPC分类号： H01L22/32 , H01L24/08 , H01L24/06 , H01L24/05 , H01L2224/08145 , H01L2224/06515 , H01L2224/05647 , H01L2224/05147 , H01L2224/80379 , H01L2924/05042 , H01L24/80
摘要： A semiconductor package is provided. The semiconductor package includes a first semiconductor substrate, a first semiconductor element layer on an upper surface of the first semiconductor substrate, a first wiring structure on the first semiconductor element layer, a first connecting pad connected to the first wiring structure, a first test pad connected to the first wiring structure, a first front side bonding pad connected to the first connecting pad and including copper (Cu), and a second front side bonding pad connected to the first front side bonding pad and including copper (Cu) which has a nanotwin crystal structure different from a crystal structure of copper (Cu) included in the first front side bonding pad, wherein a width of the first front side bonding pad in the horizontal direction is different from a width of the second front side bonding pad in the horizontal direction.
-
公开(公告)号：US20230060360A1
公开(公告)日：2023-03-02
申请号：US17715103
申请日：2022-04-07
发明人： Ju Bin SEO , Seok Ho KIM , Kwang Jin MOON
IPC分类号： H01L23/00 , H01L25/065 , H01L21/66
摘要： A semiconductor package that include first and second semiconductor chips bonded together, wherein the first semiconductor chip includes a first semiconductor substrate, a first semiconductor element layer and a first wiring structure sequentially stacked on a first surface of the first semiconductor substrate, first connecting pads and first test pads on the first wiring structure, and first front-side bonding pads, which are connected to the first connecting pads, wherein the second semiconductor chip includes a second semiconductor substrate, a second semiconductor element layer and a second wiring structure sequentially stacked on a third surface of the second semiconductor substrate, and first back-side bonding pads bonded to the first front-side bonding pads on the fourth surface of the second semiconductor substrate, and wherein the first test pads are not electrically connected to the second semiconductor chip.
-
公开(公告)号：US20130320351A1
公开(公告)日：2013-12-05
申请号：US13906044
申请日：2013-05-30
发明人： Seong Seok YANG , Ki Seok KIM , Je Won KIM , Ju Bin SEO , Sang Seok LEE , Joon Sub LEE , Jin Bock LEE
摘要： A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.
摘要翻译： 提供了半导体发光器件，并且包括具有第一下导电型半导体层和第二下导电型半导体层的保护元件。 第一和第二下电极分别连接到第一下导电型半导体层和第二下导电型半导体层。 发光结构包括依次形成在保护元件上的第一上导电型半导体层，有源层和第二上导电型半导体层。 第一上电极和第二上电极分别连接到第一上导电型半导体层和第二上导电型半导体层。
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.016 秒)
