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公开(公告)号：US20130320351A1
公开(公告)日：2013-12-05
申请号：US13906044
申请日：2013-05-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seong Seok YANG , Ki Seok KIM , Je Won KIM , Ju Bin SEO , Sang Seok LEE , Joon Sub LEE , Jin Bock LEE
Abstract: A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.
Abstract translation: 提供了半导体发光器件，并且包括具有第一下导电型半导体层和第二下导电型半导体层的保护元件。 第一和第二下电极分别连接到第一下导电型半导体层和第二下导电型半导体层。 发光结构包括依次形成在保护元件上的第一上导电型半导体层，有源层和第二上导电型半导体层。 第一上电极和第二上电极分别连接到第一上导电型半导体层和第二上导电型半导体层。
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公开(公告)号：US20130228747A1
公开(公告)日：2013-09-05
申请号：US13855540
申请日：2013-04-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang Heon HAN , Joo Young CHEON , Je Won KIM , Dong Ju LEE , Dong Chul SHIN , Hyun Wook SHIM , Jae Woong HAN
IPC: H01L33/06
Abstract: There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.
Abstract translation: 提供一种氮化物半导体发光器件，其包括在低电流和高电流密度下具有增强的外部量子效率的有源层。 氮化物半导体发光器件包括第一导电型氮化物半导体层; 设置在所述第一导电型氮化物半导体层上并具有交替布置的多个量子阱层和至少一个量子势垒层的有源层; 以及设置在有源层上的第二导电型氮化物半导体层。 彼此相邻布置的多个量子阱层包括具有不同厚度的第一和第二量子阱层。
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公开(公告)号：US20160049553A1
公开(公告)日：2016-02-18
申请号：US14828004
申请日：2015-08-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Hyun SIM , Geon Wook YOO , Mi Hyun KIM , Dong Hoon LEE , Jin Bock LEE , Je Won KIM , Hye Seok NOH , Dong Kuk LEE
CPC classification number: H01L33/24 , F21K9/232 , F21Y2115/10 , H01L33/08 , H01L33/38
Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.
Abstract translation: 纳米结构半导体发光器件可以包括：具有第一和第二区域并由第一导电型半导体材料形成的基极层; 多个发光纳米结构，其设置在所述基底层的上表面上，每一个包括由所述第一导电型半导体材料形成的纳米孔，以及依次设置在所述纳米孔上的有源层和第二导电型半导体层; 以及设置在所述多个发光纳米结构上的接触电极，其中设置在所述第一区域上的每个发光纳米结构的末端部分可以不被所述接触电极覆盖，并且每个所述发光纳米结构的顶端部分设置在所述第一区域上 第二区域可以被接触电极覆盖。
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公开(公告)号：US20150221823A1
公开(公告)日：2015-08-06
申请号：US14513026
申请日：2014-10-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Won HWANG , Je Won KIM , Il Ho AHN , Soo Jeong CHOI
CPC classification number: H01L33/08 , F21K9/232 , F21S41/147 , F21S45/43 , F21S45/47 , F21V19/001 , F21Y2101/00 , F21Y2115/10 , G02B6/0073 , H01L33/007 , H01L33/16 , H01L33/24
Abstract: There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer.
Abstract translation: 提供一种半导体发光器件，包括：第一导电型半导体基底层; 掩模层，其设置在所述第一导电型半导体基底层上并且包括具有暴露所述第一导电型半导体基底层的多个开口的石墨烯层; 以及设置在所述开口上并且各自包括第一导电型半导体芯，有源层和第二导电型半导体层的多个发光纳米结构。
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5.发明申请SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME 审中-公开具有多细胞阵列的半导体发光器件及其制造方法公开(公告)号：US20140070244A1
公开(公告)日：2014-03-13
申请号：US14081430
申请日：2013-11-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Je Won KIM , Tae Sung JANG , Jong Gun WOO , Jong Ho LEE
IPC: H01L33/08
CPC classification number: H01L33/08 , H01L27/156 , H01L33/50 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.
Abstract translation: 半导体发光器件包括衬底和布置在衬底上的多个发光单元。 每个发光单元包括第一导电型半导体层，第二导电型半导体层和设置在其间的有源层发射蓝色光。 互连结构将一个发光单元的第一导电型和第二导电型半导体层电连接到另一发光单元的第一导电型和第二导电型半导体层。 在由发光单元限定的发光区域中形成光转换部分，并且包括分别具有红色和/或绿色光转换材料的红色和/或绿色光转换部分。
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Patent Agency Ranking
公开(公告)号：US20140011310A1
公开(公告)日：2014-01-09
申请号：US13921872
申请日：2013-06-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seok Min HWANG , Jae Yoon KIM , Je Won KIM , In Bum YANG , In Yong HWANG
IPC: H01L33/00
CPC classification number: H01L33/0095
Abstract: A method of manufacturing a semiconductor light emitting device is provided. The method includes irradiating a laser into a substrate having a first surface and a second surface opposing each other to form at least one laser irradiation area on the substrate. A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer is formed on the substrate. The light emitting structure and the substrate is cut in a position corresponding to the laser irradiation area of the substrate, in a top surface of the light emitting structure, to separate the light emitting structure and the substrate into individual device units.
Abstract translation: 提供一种制造半导体发光器件的方法。 该方法包括将激光照射到具有彼此相对的第一表面和第二表面的基板中，以在基板上形成至少一个激光照射区域。 在基板上形成包括第一导电半导体层，有源层和第二导电半导体层的发光结构。 在发光结构的顶表面中，将发光结构和衬底切割成与衬底的激光照射区域相对应的位置，以将发光结构和衬底分离为各个器件单元。
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公开(公告)号：US20130313986A1
公开(公告)日：2013-11-28
申请号：US13900288
申请日：2013-05-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Je Won KIM , Sung Tae KIM , Chan Mook LIM
IPC: H05B33/08
CPC classification number: H05B33/0809
Abstract: A light emitting apparatus includes a power supply providing power having a predetermined frequency, a plurality of light emitting diode arrays, and at least one frequency converter. The light emitting diode arrays are electrically connected to the power supply and respectively have an array structure in which at least one or more light emitting diodes are connected to one another in series. The at least one frequency converter is connected to both ends of the power supply, and configured to modulate a frequency of the power provided from the power supply and provide a modulated electrical signal to at least one of the plurality of light emitting diode arrays.
Abstract translation: 发光装置包括提供具有预定频率的功率的电源，多个发光二极管阵列和至少一个频率转换器。 发光二极管阵列电连接到电源，并且分别具有其中至少一个或多个发光二极管彼此串联连接的阵列结构。 所述至少一个变频器连接到所述电源的两端，并且被配置为调制从所述电源提供的电力的频率，并将调制的电信号提供给所述多个发光二极管阵列中的至少一个。
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公开(公告)号：US20160125804A1
公开(公告)日：2016-05-05
申请号：US14825670
申请日：2015-08-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam Goo CHA , Young Soo PARK , Sung Hyun SIM , Je Won KIM
CPC classification number: G09G3/3233 , G09G2300/0426 , G09G2300/0452 , G09G2300/0852 , G09G2310/0297 , H01L27/156
Abstract: There is provided a display device including a plurality of pixels. Each of the plurality of pixels may include a plurality of switching devices, at least one capacitor, and a semiconductor light-emitting device. The display device may further include a driving circuit configured to apply currents to the semiconductor light-emitting device through the plurality of switching devices and at least one capacitor. The semiconductor light-emitting device may emit red light, green light, and blue light through the currents applied by the driving circuit.
Abstract translation: 提供了包括多个像素的显示装置。 多个像素中的每一个可以包括多个开关器件，至少一个电容器和半导体发光器件。 显示装置还可以包括被配置为通过多个开关装置和至少一个电容器向半导体发光装置施加电流的驱动电路。 半导体发光装置可以通过由驱动电路施加的电流发出红光，绿光和蓝光。
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公开(公告)号：US20140045288A1
公开(公告)日：2014-02-13
申请号：US13965846
申请日：2013-08-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ki Seok KIM , Je Won KIM , Ju Bin SEO , Seong Seok YANG , Sang Seok LEE , Joon Sub LEE , Jin Bock LEE
IPC: H01L33/58
CPC classification number: H01L33/58 , H01L33/0095 , H01L2933/0091
Abstract: A method of manufacturing a semiconductor light emitting device includes preparing a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween, forming a plurality of seeds on at least one surface of the light emitting structure, and forming a plurality of dome-shaped protrusions by forming optical waveguide groups from the plurality of respective seeds and combining the optical waveguide groups.
Abstract translation: 一种制造半导体发光器件的方法包括制备包括第一和第二导电类型半导体层和介于其间的有源层的发光结构，在发光结构的至少一个表面上形成多个晶种，并形成多个 通过从多个种子形成光波导组合并组合光波导组，从而形成圆顶形突起。
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公开(公告)号：US20130214250A1
公开(公告)日：2013-08-22
申请号：US13848046
申请日：2013-03-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Je Won KIM , Jeong Tak OH , Dong Joon KIM , Sun Woon KIM , Jin Sub PARK , Kyu Han LEE
IPC: H01L33/04
Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1−x1−y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-31 AN (where 0
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