公开(公告)号：US20200243722A1

公开(公告)日：2020-07-30

申请号：US16842850

申请日：2020-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JungSung KIM ,  Junghee KWAK ,  Seong Seok YANG

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L33/42 ,  H01L33/54 ,  H01L33/32

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.

公开(公告)号：US20180138372A1

公开(公告)日：2018-05-17

申请号：US15718438

申请日：2017-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JungSung KIM ,  Junghee KWAK ,  Seong Seok YANG

IPC: H01L33/46 ,  H01L33/42 ,  H01L33/54 ,  H01L33/62 ,  H01L33/32

CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.

公开(公告)号：US20140045288A1

公开(公告)日：2014-02-13

申请号：US13965846

申请日：2013-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Seok KIM ,  Je Won KIM ,  Ju Bin SEO ,  Seong Seok YANG ,  Sang Seok LEE ,  Joon Sub LEE ,  Jin Bock LEE

IPC: H01L33/58

CPC classification number: H01L33/58 ,  H01L33/0095 ,  H01L2933/0091

Abstract: A method of manufacturing a semiconductor light emitting device includes preparing a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween, forming a plurality of seeds on at least one surface of the light emitting structure, and forming a plurality of dome-shaped protrusions by forming optical waveguide groups from the plurality of respective seeds and combining the optical waveguide groups.

Abstract translation: 一种制造半导体发光器件的方法包括制备包括第一和第二导电类型半导体层和介于其间的有源层的发光结构，在发光结构的至少一个表面上形成多个晶种，并形成多个 通过从多个种子形成光波导组合并组合光波导组，从而形成圆顶形突起。

公开(公告)号：US20250169098A1

公开(公告)日：2025-05-22

申请号：US18680609

申请日：2024-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhyuk PARK ,  Jongseob KIM ,  Joonyong KIM ,  Seong Seok YANG ,  Jaejoon OH

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device according to an embodiment includes a channel layer; a barrier layer above the channel layer and including a material having a different energy band gap than the channel layer; a gate electrode above the barrier layer; a gate semiconductor layer between the barrier layer and the gate electrode; a source electrode and a drain electrode on respective sides of the gate electrode and on respective sides of the channel layer and the barrier layer; a field dispersion layer connected to the source electrode and on the gate electrode; and a protection layer between barrier layer and the field dispersion layer, wherein the protection layer includes a first protection layer above the barrier layer and including silicon oxide, and a second protection layer positioned above the first protection layer and including silicon oxynitride.

公开(公告)号：US20220190207A1

公开(公告)日：2022-06-16

申请号：US17683416

申请日：2022-03-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JungSung KIM ,  Junghee KWAK ,  Seong Seok YANG

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/32 ,  H01L33/42 ,  H01L33/54 ,  H01L33/62

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.

公开(公告)号：US20130320351A1

公开(公告)日：2013-12-05

申请号：US13906044

申请日：2013-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong Seok YANG ,  Ki Seok KIM ,  Je Won KIM ,  Ju Bin SEO ,  Sang Seok LEE ,  Joon Sub LEE ,  Jin Bock LEE

IPC: H01L33/36 ,  H01L33/02

CPC classification number: H01L33/36 ,  H01L27/15 ,  H01L33/02

Abstract: A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.

Abstract translation: 提供了半导体发光器件，并且包括具有第一下导电型半导体层和第二下导电型半导体层的保护元件。 第一和第二下电极分别连接到第一下导电型半导体层和第二下导电型半导体层。 发光结构包括依次形成在保护元件上的第一上导电型半导体层，有源层和第二上导电型半导体层。 第一上电极和第二上电极分别连接到第一上导电型半导体层和第二上导电型半导体层。