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    ONE-TIME PROGRAMMABLE MEMORY DEVICE HAVING ACCESS CIRCUIT
    2.
    发明申请
    ONE-TIME PROGRAMMABLE MEMORY DEVICE HAVING ACCESS CIRCUIT 有权

    公开(公告)号：US20170287570A1

    公开(公告)日：2017-10-05

    申请号：US15393838

    申请日：2016-12-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hoon Jin BANG ,  Sang Seok LEE

    IPC: G11C17/18 ,  G11C17/16

    CPC classification number: G11C17/18 ,  G11C7/14 ,  G11C11/5692 ,  G11C17/16 ,  G11C2207/063

    Abstract: A one-time programmable (OTP) memory device includes an OTP memory cell array comprising a plurality of dummy cells and a plurality of main cell groups of main cells and an access circuit configured to write data to at least two of the cells simultaneously. The arrangement of the dummy cells and the main cell groups may allow for the reliable writing of multi-bit data to the memory array. Each of the main cell groups may include a plurality of main cells which are connected to word lines, respectively, and to bit lines, respectively. Each of the main cells may be writable and each of the dummy cells may be unwritable. Each of the main cells may include a contact layer, and the dummy cells might not include the contact layer. A supply voltage may be applied to the OTP memory cell array through the contact layer.

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20130320351A1

    公开(公告)日：2013-12-05

    申请号：US13906044

    申请日：2013-05-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seong Seok YANG ,  Ki Seok KIM ,  Je Won KIM ,  Ju Bin SEO ,  Sang Seok LEE ,  Joon Sub LEE ,  Jin Bock LEE

    IPC: H01L33/36 ,  H01L33/02

    CPC classification number: H01L33/36 ,  H01L27/15 ,  H01L33/02

    Abstract: A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.

    Abstract translation: 提供了半导体发光器件，并且包括具有第一下导电型半导体层和第二下导电型半导体层的保护元件。 第一和第二下电极分别连接到第一下导电型半导体层和第二下导电型半导体层。 发光结构包括依次形成在保护元件上的第一上导电型半导体层，有源层和第二上导电型半导体层。 第一上电极和第二上电极分别连接到第一上导电型半导体层和第二上导电型半导体层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20180019380A1

    公开(公告)日：2018-01-18

    申请号：US15437970

    申请日：2017-02-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ju Hyun KIM ,  Jae Ryung YOO ,  Gi Bum KIM ,  Ha Yeong SON ,  Sang Seok LEE

    IPC: H01L33/38 ,  H01L33/44

    CPC classification number: H01L33/382 ,  H01L33/44

    Abstract: A semiconductor light emitting device includes: a multilayer semiconductor body having a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and at least one recess exposing the first conductivity-type semiconductor layer, and an insulating part on an internal sidewall of the at least one recess and an upper surface of the second conductivity-type semiconductor layer. The insulating part has an insulating spacer on the internal sidewall of the recess, and a lateral surface of the insulating spacer has a surface without an angular point from an upper end to a lower end thereof.

    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    制造半导体发光器件的方法

    公开(公告)号：US20140045288A1

    公开(公告)日：2014-02-13

    申请号：US13965846

    申请日：2013-08-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ki Seok KIM ,  Je Won KIM ,  Ju Bin SEO ,  Seong Seok YANG ,  Sang Seok LEE ,  Joon Sub LEE ,  Jin Bock LEE

    IPC: H01L33/58

    CPC classification number: H01L33/58 ,  H01L33/0095 ,  H01L2933/0091

    Abstract: A method of manufacturing a semiconductor light emitting device includes preparing a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween, forming a plurality of seeds on at least one surface of the light emitting structure, and forming a plurality of dome-shaped protrusions by forming optical waveguide groups from the plurality of respective seeds and combining the optical waveguide groups.

    Abstract translation: 一种制造半导体发光器件的方法包括制备包括第一和第二导电类型半导体层和介于其间的有源层的发光结构，在发光结构的至少一个表面上形成多个晶种，并形成多个 通过从多个种子形成光波导组合并组合光波导组，从而形成圆顶形突起。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS HAVING THE SAME
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS HAVING THE SAME 有权
    半导体发光器件及其半导体发光器件

    公开(公告)号：US20150171298A1

    公开(公告)日：2015-06-18

    申请号：US14543481

    申请日：2014-11-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Myong Soo CHO ,  Yong-Il KIM ,  Jin Ha KIM ,  Kwang Min SONG ,  Sang Seok LEE

    IPC: H01L33/62 ,  H01L33/40 ,  H01L33/44 ,  H01L33/20

    CPC classification number: H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2933/0091

    Abstract: In example embodiments, a semiconductor light emitting device includes a light emitting structure, first and second insulating layers, a barrier metal layer, and an electrode. The light emitting structure includes an active layer between a first and second conductivity-type semiconductor layer. The first insulating layer is on the light emitting structure and defines a first one and a second one of first openings that respectively expose the first and second conductivity-type semiconductor layers. The barrier metal layer is on the first insulating layer and electrically connected to the first and second conductivity-type semiconductor layers through the first and second one of the first openings. The second insulating layer is on the barrier metal layer and defines a second opening that partially exposes the barrier metal layer. The electrode is on the barrier metal layer and electrically connected to the first and second conductivity-type semiconductor layers through the barrier metal layer.

    Abstract translation: 在示例性实施例中，半导体发光器件包括发光结构，第一和第二绝缘层，阻挡金属层和电极。 发光结构包括在第一和第二导电类型半导体层之间的有源层。 第一绝缘层位于发光结构上并且限定分别暴露第一和第二导电类型半导体层的第一开口和第二开口中的第一绝缘层。 阻挡金属层位于第一绝缘层上，并通过第一和第二开口与第一和第二导电型半导体层电连接。 第二绝缘层位于阻挡金属层上并且限定了部分地暴露阻挡金属层的第二开口。 电极在阻挡金属层上，并通过阻挡金属层与第一和第二导电型半导体层电连接。

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