Abstract:
The present disclosure relates to a display apparatus including a display panel, a bezel surface formed on a boundary of the display panel, and an antenna located on the bezel surface, wherein the antenna includes an antenna body extending in a horizontal direction to the bezel surface, an extension body provided on one side or opposite sides of the antenna body, and a frequency variable device configured to selectively electrically connect the antenna body and the extension body.
Abstract:
A semiconductor device including a substrate including a first conductive pad on a first surface thereof, at least one first bump structure on the first conductive pad, the first bump structure including a first connecting member and a first delamination prevention layer, the first delamination prevention layer on the first connecting member and having a greater hardness than the first connecting member, and a first encapsulant above the first surface of the substrate and surrounding the first bump structure may be provided.
Abstract:
An electronic device includes an outer housing including a first surface, a second surface, and a side surface, a printed circuit board seated in the outer housing, and at least one side key coupled to a peripheral area of the outer housing. The side key includes at least one contact part exposed through a through-hole formed in the side surface of the outer housing, a side key circuit board including a switch module that contacts the contact part when the contact part is pressed, the side key circuit board being electrically connected to the printed circuit board, a side key bracket in which at least a portion of the side key circuit board is seated and which fixes and supports the side key circuit board, and one or more molded members that are coupled to opposite ends of the side key bracket and are coupled to the outer housing.
Abstract:
A nanostructure semiconductor light emitting device includes a base layer, an insulating layer and a plurality of light emitting nanostructures. The base layer is formed of a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. Each of the light emitting nanostructures is disposed on the exposed regions of the base layer and includes nanocore formed of a first conductivity type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on side surfaces of the nanocore. Upper surfaces of the light emitting nanostructures are non-planar and contain portions free of the second conductivity-type semiconductor layer in order to prevent light emissions during device driving.
Abstract:
A display device provided with one or more modules includes a communication unit configured to transmit state information of the one or more modules to a server and an adjacent device and configured to receive a parameter set in the adjacent device from the server or the adjacent device, both of which receive the state information, and a controller configured to change a mode of the one or more modules according to the parameter.
Abstract:
There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer, a plurality of light emitting nanostructures disposed on the first conductivity-type semiconductor base layer to be spaced apart from one another, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and a filling layer including a refractive portion disposed between the light emitting nanostructures and a cover portion filled between the light emitting nanostructures and enclosing the refractive portion.
Abstract:
The present disclosure relates to a display apparatus including a display panel, a bezel surface formed on a boundary of the display panel, and an antenna located on the bezel surface, wherein the antenna includes a composite right left handed (CRLH) structure including a series inductor, a series capacitor, a parallel inductor, and a parallel capacitor.
Abstract:
A semiconductor light emitting device may include a semiconductor light emitting diode (LED) chip, a light-transmitting film on the LED chip, and a light-transmitting bonding layer between the light-transmitting film and the semiconductor LED chip. At least one of the light-transmitting film and the light-transmitting bonding layer may include a wavelength conversion material configured to convert light emitted by the semiconductor LED chip into light having a wavelength different from a wavelength of the emitted light. The light-transmitting bonding layer may have a lateral inclined region extending to the lateral surface to form an inclined surface. The semiconductor light emitting device may further include a reflective packaging portion surrounding the light-transmitting bonding layer, covering the first surface such that an electrode of the LED chip is at least partially exposed. The reflective packaging portion may include a reflective material.
Abstract:
A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.