SIDE KEY AND ELECTRONIC DEVICE INCLUDING THE SAME

    公开(公告)号:US20170245376A1

    公开(公告)日:2017-08-24

    申请号:US15440827

    申请日:2017-02-23

    Abstract: An electronic device includes an outer housing including a first surface, a second surface, and a side surface, a printed circuit board seated in the outer housing, and at least one side key coupled to a peripheral area of the outer housing. The side key includes at least one contact part exposed through a through-hole formed in the side surface of the outer housing, a side key circuit board including a switch module that contacts the contact part when the contact part is pressed, the side key circuit board being electrically connected to the printed circuit board, a side key bracket in which at least a portion of the side key circuit board is seated and which fixes and supports the side key circuit board, and one or more molded members that are coupled to opposite ends of the side key bracket and are coupled to the outer housing.

    NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE
    4.
    发明申请
    NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    纳米结构半导体发光器件

    公开(公告)号:US20150102365A1

    公开(公告)日:2015-04-16

    申请号:US14338174

    申请日:2014-07-22

    CPC classification number: H01L33/24 H01L33/08 H01L33/18 H01L33/385

    Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer and a plurality of light emitting nanostructures. The base layer is formed of a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. Each of the light emitting nanostructures is disposed on the exposed regions of the base layer and includes nanocore formed of a first conductivity type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on side surfaces of the nanocore. Upper surfaces of the light emitting nanostructures are non-planar and contain portions free of the second conductivity-type semiconductor layer in order to prevent light emissions during device driving.

    Abstract translation: 纳米结构半导体发光器件包括基底层,绝缘层和多个发光纳米结构。 基层由第一导电型半导体形成。 绝缘层设置在基底层上并具有多个开口,基底层的区域暴露在该开口中。 每个发光纳米结构设置在基底层的暴露区域上,并且包括由第一导电型半导体形成的纳米孔,以及顺序地设置在纳米孔的侧表面上的有源层和第二导电类型半导体层。 发光纳米结构的上表面是非平面的,并且包含不含第二导电型半导体层的部分,以便防止器件驱动期间的光发射。

    DISPLAY DEVICE, SERVER, AND CONTROLLING METHOD OF DISPLAY DEVICE
    5.
    发明申请
    DISPLAY DEVICE, SERVER, AND CONTROLLING METHOD OF DISPLAY DEVICE 审中-公开
    显示设备的显示设备,服务器和控制方法

    公开(公告)号:US20160119654A1

    公开(公告)日:2016-04-28

    申请号:US14875814

    申请日:2015-10-06

    Abstract: A display device provided with one or more modules includes a communication unit configured to transmit state information of the one or more modules to a server and an adjacent device and configured to receive a parameter set in the adjacent device from the server or the adjacent device, both of which receive the state information, and a controller configured to change a mode of the one or more modules according to the parameter.

    Abstract translation: 设置有一个或多个模块的显示装置包括通信单元,其被配置为将一个或多个模块的状态信息发送到服务器和相邻设备,并且被配置为从服务器或相邻设备接收相邻设备中的参数集, 两者都接收状态信息,以及控制器,被配置为根据参数改变一个或多个模块的模式。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号:US20150129834A1

    公开(公告)日:2015-05-14

    申请号:US14472089

    申请日:2014-08-28

    CPC classification number: H01L33/24 H01L33/18 H01L33/42 H01L33/44

    Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer, a plurality of light emitting nanostructures disposed on the first conductivity-type semiconductor base layer to be spaced apart from one another, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and a filling layer including a refractive portion disposed between the light emitting nanostructures and a cover portion filled between the light emitting nanostructures and enclosing the refractive portion.

    Abstract translation: 提供了一种半导体发光器件,其包括第一导电型半导体基底层,设置在第一导电型半导体基底层上彼此间隔开的多个发光纳米结构,每个发光纳米结构包括第一导电性 以及填充层,其包括设置在发光纳米结构之间的折射部分和填充在发光纳米结构之间并包围折射部分的覆盖部分。

    SEMICONDUCTOR LIGHT EMITTING DEVICES

    公开(公告)号:US20170309793A1

    公开(公告)日:2017-10-26

    申请号:US15364739

    申请日:2016-11-30

    Abstract: A semiconductor light emitting device may include a semiconductor light emitting diode (LED) chip, a light-transmitting film on the LED chip, and a light-transmitting bonding layer between the light-transmitting film and the semiconductor LED chip. At least one of the light-transmitting film and the light-transmitting bonding layer may include a wavelength conversion material configured to convert light emitted by the semiconductor LED chip into light having a wavelength different from a wavelength of the emitted light. The light-transmitting bonding layer may have a lateral inclined region extending to the lateral surface to form an inclined surface. The semiconductor light emitting device may further include a reflective packaging portion surrounding the light-transmitting bonding layer, covering the first surface such that an electrode of the LED chip is at least partially exposed. The reflective packaging portion may include a reflective material.

    NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE
    9.
    发明申请
    NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    纳米结构半导体发光器件

    公开(公告)号:US20160049553A1

    公开(公告)日:2016-02-18

    申请号:US14828004

    申请日:2015-08-17

    CPC classification number: H01L33/24 F21K9/232 F21Y2115/10 H01L33/08 H01L33/38

    Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.

    Abstract translation: 纳米结构半导体发光器件可以包括:具有第一和第二区域并由第一导电型半导体材料形成的基极层; 多个发光纳米结构,其设置在所述基底层的上表面上,每一个包括由所述第一导电型半导体材料形成的纳米孔,以及依次设置在所述纳米孔上的有源层和第二导电型半导体层; 以及设置在所述多个发光纳米结构上的接触电极,其中设置在所述第一区域上的每个发光纳米结构的末端部分可以不被所述接触电极覆盖,并且每个所述发光纳米结构的顶端部分设置在所述第一区域上 第二区域可以被接触电极覆盖。

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