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    Variable resistance memory device and method of manufacturing the same
    2.
    发明授权
    Variable resistance memory device and method of manufacturing the same 有权

    公开(公告)号：US10236444B2

    公开(公告)日：2019-03-19

    申请号：US15432346

    申请日：2017-02-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hideki Horii ,  Seong-Geon Park ,  Dong-Ho Ahn ,  Jung-Moo Lee

    IPC: H01L45/00 ,  H01L27/24

    Abstract: A variable resistance memory device includes first conductive lines positioned above a substrate. Each of the first conductive lines extends in a first direction and a second direction. Second conductive lines extend in the first direction and the second direction. The second conductive lines are positioned above the first conductive lines. A memory is positioned between the first and second conductive lines. The memory unit overlaps the first and second conductive lines in a third direction. The memory unit includes a first electrode, a variable resistance pattern positioned on the first electrode, and a second electrode positioned on the variable resistance pattern. A selection pattern is positioned on each memory unit. A third electrode is positioned above the selection pattern. The third electrode is in direct contact with a lower surface of each of the second conductive lines.

    Variable resistance memory devices
    6.
    发明授权
    Variable resistance memory devices 有权
    可变电阻存储器件

    公开(公告)号：US09391269B2

    公开(公告)日：2016-07-12

    申请号：US14457439

    申请日：2014-08-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung-Moo Lee ,  Youn-Seon Kang ,  Seung-Jae Jung ,  Jung-Dal Choi

    IPC: H01L45/00 ,  H01L21/768 ,  H01L27/24 ,  H01L21/336 ,  H01L29/788 ,  H01L27/108

    CPC classification number: H01L45/1233 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1675

    Abstract: A variable resistance memory device includes a plurality of first conductive lines, a plurality of second conductive lines, a plurality of memory cells, a plurality of first air gaps and a plurality of second air gaps. The first conductive line extends in a first direction. The second conductive line is over the first conductive line and extends in a second direction crossing the first direction. The memory cell includes a variable resistance device. The memory cell is located at an intersection region of the first conductive line and the second conductive line. The first air gap extends in the first direction between the memory cells. The second air gap extends in the second direction between the memory cells.

    Abstract translation: 可变电阻存储器件包括多个第一导线，多个第二导线，多个存储单元，多个第一气隙和多个第二气隙。 第一导线沿第一方向延伸。 第二导线在第一导线上方并且沿与第一方向交叉的第二方向延伸。 存储单元包括可变电阻器件。 存储单元位于第一导线和第二导线的交叉区域。 第一气隙在存储单元之间沿第一方向延伸。 第二气隙沿第二方向在存储单元之间延伸。

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