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    METHOD OF MANUFACTURING MEMORY DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING MEMORY DEVICE 审中-公开

    公开(公告)号：US20200083448A1

    公开(公告)日：2020-03-12

    申请号：US16360500

    申请日：2019-03-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jung-hyun Cho ,  Song-yi Kim ,  Masayuki Terai

    IPC: H01L45/00 ,  H01L43/12

    Abstract: A method of manufacturing a memory device includes forming a transistor on a substrate, forming a lower interlayer insulating layer covering the transistor, forming a hydrogen supply layer on the lower interlayer insulating layer, forming a hydrogen blocking layer on the hydrogen supply layer, annealing the transistor, the lower interlayer insulating layer, and the hydrogen supply layer, forming a memory cell on the hydrogen blocking layer after the annealing, and forming an upper interlayer insulating layer surrounding the memory cell and having a third average hydrogen concentration less than the second average hydrogen concentration.

    Pulse plasma apparatus and drive method thereof
    2.
    发明授权
    Pulse plasma apparatus and drive method thereof 有权
    脉冲等离子体装置及其驱动方法

    公开(公告)号：US09378931B2

    公开(公告)日：2016-06-28

    申请号：US14796188

    申请日：2015-07-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ohyung Kwon ,  Namjun Kang ,  Doug-Yong Sung ,  Jung-hyun Cho

    IPC: H01J7/24 ,  H01J37/32 ,  H05B31/26

    CPC classification number: H01J37/32183 ,  H01J7/24 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32926 ,  H01J2237/327 ,  H01J2237/334 ,  H05B31/26

    Abstract: A pulse plasma apparatus includes a process chamber, source RF generator configured to supply first and second level RF pulse power having first and second duty cycles to an upper electrode of the process chamber, a reflected power indicator configured to indicate reflection RF power, a first matching network, and a controller. The first matching network is configured to match an impedance of the process chamber with an impedance of the source RF generator as a first or second matching capacitance value, respectively when the first level RF pulse power or second level RF pulse power is supplied, respectively. The controller is configured to calculate a third matching capacitance value based on the first and second matching capacitance values and a ratio of the first and second duty cycles, provide the third matching capacitance values to the first matching network, and control the source RF generator and first matching network.

    Abstract translation: 脉冲等离子体装置包括处理室，源RF发生器，被配置为向处理室的上电极提供具有第一和第二占空比的第一和第二电平的RF脉冲功率，被配置为指示反射RF功率的反射功率指示器，第一 匹配网络和控制器。 当分别提供第一级RF脉冲功率或第二级RF脉冲功率时，第一匹配网络被配置为将处理室的阻抗与源RF发生器的阻抗分别匹配为第一或第二匹配电容值。 控制器被配置为基于第一和第二匹配电容值和第一和第二占空比的比率来计算第三匹配电容值，向第一匹配网络提供第三匹配电容值，并且控制源RF发生器和 第一匹配网络。

    Method of manufacturing memory device
    3.
    发明授权
    Method of manufacturing memory device 有权

    公开(公告)号：US11094882B2

    公开(公告)日：2021-08-17

    申请号：US16360500

    申请日：2019-03-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jung-hyun Cho ,  Song-yi Kim ,  Masayuki Terai

    IPC: H01L23/522 ,  H01L45/00 ,  H01L43/12

    Abstract: A method of manufacturing a memory device includes forming a transistor on a substrate, forming a lower interlayer insulating layer covering the transistor, forming a hydrogen supply layer on the lower interlayer insulating layer, forming a hydrogen blocking layer on the hydrogen supply layer, annealing the transistor, the lower interlayer insulating layer, and the hydrogen supply layer, forming a memory cell on the hydrogen blocking layer after the annealing, and forming an upper interlayer insulating layer surrounding the memory cell and having a third average hydrogen concentration less than the second average hydrogen concentration.

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