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公开(公告)号：US11198815B2
公开(公告)日：2021-12-14
申请号：US16983332
申请日：2020-08-03
发明人： Soo Jin Kim , Hyo Sun Lee , Jin Hye Bae , Jung Hun Lim , Yong Jae Choi
IPC分类号： C09K13/08 , H01L21/306 , H01L21/3213 , B82Y10/00 , C09K13/00 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/78 , H01L29/786
摘要： An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).
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公开(公告)号：US20190338186A1
公开(公告)日：2019-11-07
申请号：US16511291
申请日：2019-07-15
发明人： Hyo Sun Lee , Ho Young Kim , Sang Won Bae , Min Goo Kim , Jung Hun Lim , Yong Jae Choi
IPC分类号： C09K13/06 , H01L21/3213 , C09K13/04 , C09K13/10 , H01L21/311
摘要： An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).
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公开(公告)号：US11028488B2
公开(公告)日：2021-06-08
申请号：US16574372
申请日：2019-09-18
发明人： Jungah Kim , Mihyun Park , Jinwoo Lee , Keonyoung Kim , Hyosan Lee , Hoon Han , Jin Uk Lee , Jung Hun Lim
IPC分类号： C23F1/26 , C23F1/30 , H01L21/311 , H01L21/306
摘要： Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.
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公开(公告)号：US10800972B2
公开(公告)日：2020-10-13
申请号：US16511291
申请日：2019-07-15
发明人： Hyo Sun Lee , Ho Young Kim , Sang Won Bae , Min Goo Kim , Jung Hun Lim , Yong Jae Choi
IPC分类号： C09K13/06 , C09K13/04 , C09K13/10 , H01L21/311 , H01L21/3213
摘要： An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).
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公开(公告)号：US11795550B2
公开(公告)日：2023-10-24
申请号：US17313534
申请日：2021-05-06
发明人： Jungah Kim , Mihyun Park , Jinwoo Lee , Keonyoung Kim , Hyosan Lee , Hoon Han , Jin Uk Lee , Jung Hun Lim
IPC分类号： C23F1/26 , C23F1/30 , H01L21/311 , H01L21/306 , B81C1/00 , C09K13/04
CPC分类号： C23F1/26 , B81C1/00539 , C09K13/04 , C23F1/30 , H01L21/30604 , H01L21/31111
摘要： A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.
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6.发明授权公开(公告)号：US11380537B2
公开(公告)日：2022-07-05
申请号：US16265709
申请日：2019-02-01
发明人： Hoyoung Kim , Hyo-Sun Lee , Soojin Kim , Keonyoung Kim , Jinhye Bae , Hoon Han , Tae Soo Kwon , Jung Hun Lim
IPC分类号： C11D3/04 , C11D3/30 , C11D3/44 , H01L21/02 , C11D7/26 , C11D7/08 , C11D7/32 , C11D11/00 , H01L21/683 , H01L23/00 , H01L21/304 , H01L21/306
摘要： Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less thaadminn 90 wt %, quaternary ammonium salt, and primary amine.
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公开(公告)号：US10793775B2
公开(公告)日：2020-10-06
申请号：US16543999
申请日：2019-08-19
发明人： Soo Jin Kim , Hyo Sun Lee , Jin Hye Bae , Jung Hun Lim , Yong Jae Choi
IPC分类号： C09K13/08 , H01L21/306 , H01L21/3213 , B82Y10/00 , C09K13/00 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/78 , H01L29/786
摘要： An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).
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8.发明授权公开(公告)号：US10332740B2
公开(公告)日：2019-06-25
申请号：US15841946
申请日：2017-12-14
发明人： Hoyoung Kim , Hyo-Sun Lee , Soojin Kim , Keonyoung Kim , Jinhye Bae , Hoon Han , Tae Soo Kwon , Jung Hun Lim
IPC分类号： H01L21/44 , H01L21/02 , C11D7/26 , C11D7/08 , C11D7/32 , C11D11/00 , H01L21/683 , H01L23/00 , H01L21/304 , H01L21/306
摘要： Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less than 90 wt %, quaternary ammonium salt, and primary amine.
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公开(公告)号：US10414978B2
公开(公告)日：2019-09-17
申请号：US15804422
申请日：2017-11-06
发明人： Soo Jin Kim , Hyo Sun Lee , Jin Hye Bae , Jung Hun Lim , Yong Jae Choi
IPC分类号： C09K13/08 , H01L21/306 , H01L21/3213 , H01L29/423 , H01L29/66 , H01L29/78 , H01L29/775 , B82Y10/00 , H01L29/06 , C09K13/00
摘要： An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).
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公开(公告)号：US10377948B2
公开(公告)日：2019-08-13
申请号：US15809597
申请日：2017-11-10
发明人： Hyo Sun Lee , Ho Young Kim , Sang Won Bae , Min Goo Kim , Jung Hun Lim , Yong Jae Choi
IPC分类号： C09K13/04 , C09K13/06 , C09K13/10 , H01L21/311 , H01L21/3213
摘要： An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).
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