公开(公告)号：US11869926B2

公开(公告)日：2024-01-09

申请号：US17146894

申请日：2021-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Younsoo Kim ,  Jooho Lee ,  Narae Han

IPC: H10B12/00 ,  H01L49/02

CPC classification number: H01L28/56 ,  H01L28/60 ,  H10B12/315 ,  H10B12/34

Abstract: Provided is a semiconductor device including a lower electrode, an upper electrode isolated from direct contact with the lower electrode, and a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising a first metal oxide area, a second metal oxide area, and a third metal oxide area. The third metal oxide area is between the first metal oxide area and the second metal oxide area, and includes boron and one or more metal elements selected from aluminum (Al), magnesium (Mg), silicon (Si), or beryllium (Be). In the third metal oxide area, a content of boron (B) is less than or equal to a content of the metal elements of Al, Mg, Si, and/or Be.

公开(公告)号：US12071690B2

公开(公告)日：2024-08-27

申请号：US16827895

申请日：2020-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Narae Han ,  Jeonggyu Song ,  Yongsung Kim ,  Jooho Lee

IPC: C23C16/56 ,  C01F7/02 ,  C01G15/00 ,  C01G25/02 ,  C01G27/02 ,  C23C14/08 ,  C23C14/58 ,  C23C16/40 ,  C23C16/455 ,  H10B12/00 ,  H10B53/00

CPC classification number: C23C16/56 ,  C01F7/02 ,  C01G15/00 ,  C01G25/02 ,  C01G27/02 ,  C23C14/08 ,  C23C14/081 ,  C23C14/5806 ,  C23C16/40 ,  C23C16/403 ,  C23C16/45525 ,  H10B12/00 ,  H10B53/00 ,  C01P2006/40

Abstract: A thin film structure including a dielectric material layer, a method of manufacturing the same, and an electronic device employing the same are disclosed. The disclosed thin film structure includes a first conductive layer; a first dielectric material layer on the first conductive layer, the first dielectric material layer having a crystal phase and including a metal oxide; an InxOy-based seed material layer formed on the first dielectric material layer and having a thickness less than a thickness of the first dielectric material layer; and a second conductive layer formed on the seed material layer.

公开(公告)号：US20230299125A1

公开(公告)日：2023-09-21

申请号：US18156273

申请日：2023-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Eunae Cho ,  Yongsung Kim ,  Boeun Park ,  Narae Han

IPC: H01L21/02 ,  H01G4/10

CPC classification number: H01L28/75 ,  H01G4/10

Abstract: A capacitor includes a lower electrode, an upper electrode, a dielectric film between the lower electrode and the upper electrode, and a leakage current reduction film between the upper electrode and the dielectric film. The leakage current reduction film includes a doped AlZrO film, wherein an ionic radius of a dopant contained in the doped AlZrO film is greater than or equal to about 130 picometers (pm).

公开(公告)号：US11693237B2

公开(公告)日：2023-07-04

申请号：US17519347

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jeongyub Lee ,  Reehyang Kim ,  Jonghwa Shin ,  Kiyeon Yang ,  Yongsung Kim ,  Jaekwan Kim ,  Changseung Lee ,  Narae Han

IPC: G02B27/00 ,  G02B1/00 ,  G02B3/02 ,  G02B5/08

CPC classification number: G02B27/0025 ,  G02B1/002 ,  G02B3/02 ,  G02B5/0825

Abstract: A phase shifting device may include a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

公开(公告)号：US11194153B2

公开(公告)日：2021-12-07

申请号：US16421857

申请日：2019-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jeongyub Lee ,  Reehyang Kim ,  Jonghwa Shin ,  Kiyeon Yang ,  Yongsung Kim ,  Jaekwan Kim ,  Changseung Lee ,  Narae Han

IPC: G02B27/00 ,  G02B1/00 ,  G02B3/02 ,  G02B5/08

Abstract: Provided in a phase shifting device including a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.