公开(公告)号：US20160351455A1

公开(公告)日：2016-12-01

申请号：US15001729

申请日：2016-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Jung ,  Sang-Ho Yun ,  Un Jeon ,  Byeongsoo Kim ,  Cheolhong Kim ,  Taehong Min ,  Joonsoo Park

IPC: H01L21/66 ,  G01N21/95 ,  G01B11/00 ,  H01L21/027 ,  G01B11/27

CPC classification number: H01L22/12 ,  G01B11/002 ,  G01B11/272 ,  G03F7/70633 ,  H01L21/0274

Abstract: Provided are methods of generating and revising overlay correction data, a method of performing a photolithography process using the overlay correction data, and a method of performing a photolithography process while revising the overlay correction data. The method of revising the overlay correction data includes forming a plurality of overlay keys on a first set of wafers using first overlay correction data, measuring first overlay keys formed on first overlay coordinates in a first shot area of a first wafer among the first set of wafers, generating first overlay error data, and revising primarily the first overlay correction data using the first overlay error data, measuring second overlay keys formed on second overlay coordinates in a second shot area of a second wafer among the first set of wafers, generating second overlay error data, and revising secondarily the primarily revised first overlay correction data using the second overlay error data, and measuring third overlay keys formed on third overlay coordinates in a third shot area of a third wafer among the first set of wafers, generating third overlay error data, revising tertiarily the secondarily revised first overlay correction data, and generating second overlay correction data. The first overlay coordinates, the second overlay coordinates, and the third overlay coordinates are mutually exclusive.

Abstract translation: 提供了生成和修改覆盖校正数据的方法，使用覆盖校正数据执行光刻处理的方法，以及在修改覆盖校正数据的同时执行光刻处理的方法。 修改覆盖校正数据的方法包括使用第一覆盖校正数据在第一组晶片上形成多个覆盖键，测量在第一组中的第一晶片的第一覆盖坐标中形成的第一覆盖坐标， 生成第一重叠错误数据，并且使用第一重叠错误数据主要修改第一重叠校正数据，测量形成在第一组晶片中的第二晶片的第二拍摄区域中的第二覆盖坐标上的第二重叠键，产生第二叠加错误数据 重叠错误数据，并且使用第二覆盖误差数据二次修改主要修改的第一覆盖校正数据，以及测量形成在第一晶片组中的第三晶片的第三拍摄区域中的第三覆盖坐标上的第三覆盖键，生成第三覆盖 错误数据，二次修改二次修改的第一重叠校正数据，并产生第二叠加校正 数据。 第一覆盖坐标，第二覆盖坐标和第三覆盖坐标是相互排斥的。

公开(公告)号：US20240203796A1

公开(公告)日：2024-06-20

申请号：US18508566

申请日：2023-11-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeong Seon PARK ,  Sang-Ho Yun ,  Woo Jin Jung

IPC: H01L21/66 ,  G03F1/42 ,  G03F7/00 ,  G03F9/00 ,  H01L21/027

CPC classification number: H01L22/12 ,  G03F1/42 ,  G03F7/70633 ,  G03F7/706845 ,  G03F9/7065 ,  H01L21/027

Abstract: A method for manufacturing a semiconductor device, the method including forming a stack on a wafer, wherein the stack includes a plurality of layers of the stack, forming a photoresist pattern on the stack, determining whether a material of at least one layer among the plurality of layers of the stack has changed and whether at least one process among a plurality of processes for forming the plurality of layers of the stack has changed, changing a first wavelength for overlay measurement upon determination that the material of the at least one layer or the at least one process has changed, and measuring an overlay using the changed first wavelength for overlay measurement.

公开(公告)号：US11768432B2

公开(公告)日：2023-09-26

申请号：US17407425

申请日：2021-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Ho Yun ,  Soo Kyung Kim ,  Jaikyun Park ,  Donghoon Lee ,  Rankyung Jung ,  Soonmok Ha

IPC: G03F1/24 ,  H01L21/027

CPC classification number: G03F1/24 ,  H01L21/0274

Abstract: A reflective mask includes a central region and first and second peripheral regions at opposite sides of the central region, respectively, the first peripheral region including a first out-of-band region having a first edge region extending in a first direction, and a first expansion region between the first edge region and the central region, and a first outer auxiliary region adjacent to the first expansion region of the first out-of-band region in the first direction, the first outer auxiliary region having a first auxiliary pattern region.

公开(公告)号：US09679821B2

公开(公告)日：2017-06-13

申请号：US15001729

申请日：2016-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Jung ,  Sang-Ho Yun ,  Un Jeon ,  Byeongsoo Kim ,  Cheolhong Kim ,  Taehong Min ,  Joonsoo Park

IPC: H01L21/66 ,  H01L21/027 ,  G01B11/27 ,  G01B11/00 ,  G03F7/20

CPC classification number: H01L22/12 ,  G01B11/002 ,  G01B11/272 ,  G03F7/70633 ,  H01L21/0274

Abstract: Provided are methods of generating and revising overlay correction data, a method of performing a photolithography process using the overlay correction data, and a method of performing a photolithography process while revising the overlay correction data. The method of revising the overlay correction data includes forming a plurality of overlay keys on a first set of wafers using first overlay correction data, measuring first overlay keys formed on first overlay coordinates in a first shot area of a first wafer among the first set of wafers, generating first overlay error data, and revising primarily the first overlay correction data using the first overlay error data, measuring second overlay keys formed on second overlay coordinates in a second shot area of a second wafer among the first set of wafers, generating second overlay error data, and revising secondarily the primarily revised first overlay correction data using the second overlay error data, and measuring third overlay keys formed on third overlay coordinates in a third shot area of a third wafer among the first set of wafers, generating third overlay error data, revising tertiarily the secondarily revised first overlay correction data, and generating second overlay correction data. The first overlay coordinates, the second overlay coordinates, and the third overlay coordinates are mutually exclusive.