公开(公告)号：US20150113195A1

公开(公告)日：2015-04-23

申请号：US14518035

申请日：2014-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seijin KIM

IPC: G06F13/40

CPC classification number: G06F13/4027 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2924/12044 ,  Y02D10/14 ,  Y02D10/151 ,  H01L2924/00

Abstract: An electronic device includes: a communication module; an input module; a display; an interface; at least one sensor; a memory; and a processor module. The processor module includes at least one of: at least one dummy chip including at least one Through Silicon Via (TSV); at least one memory bridge including at least one TSV; at least one memory connected to the at least one dummy chip and the at least one memory bridge and that can exchange an electric signal through the at least one dummy chip and the at least one memory bridge; or at least one processor. The at least one processor may be configured to exchange an electric signal through the at least one memory bridge, and to transmit an electric signal to at least one of the communication module, input module, display, interface, at least one sensor, or first memory. The at least one processor may exchange information via a circuit path that includes at least one of the memory bridge and a portion of the at least one memory, when transmitting the electric signal.

Abstract translation: 电子设备包括：通信模块; 一个输入模块; 一个显示器 界面; 至少一个传感器; 记忆 和处理器模块。 所述处理器模块包括以下至少一个：至少一个包括至少一个通硅通路（TSV）的虚设芯片; 至少一个包括至少一个TSV的存储器桥; 至少一个存储器，连接到所述至少一个虚拟芯片和所述至少一个存储器桥，并且可以通过所述至少一个虚拟芯片和所述至少一个存储器桥交换电信号; 或至少一个处理器。 所述至少一个处理器可以被配置为通过所述至少一个存储器桥交换电信号，并且将电信号发送到所述通信模块，输入模块，显示器，接口，至少一个传感器或第一 记忆。 当发送电信号时，至少一个处理器可以经由包括存储器桥和至少一个存储器的一部分中的至少一个的电路路径交换信息。

公开(公告)号：US20150149688A1

公开(公告)日：2015-05-28

申请号：US14554369

申请日：2014-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghwan YUN ,  Seijin KIM

IPC: G06F3/06

CPC classification number: G06F3/0632 ,  G06F3/0605 ,  G06F3/0679

Abstract: A method of managing a memory by an electronic device is provided. The method includes configuring a swap data amount per unit time, identifying an actual use amount of swap data, and comparing the identified actual use amount of the swap data with the configured swap data amount per unit time.

Abstract translation: 提供了一种通过电子设备管理存储器的方法。 该方法包括配置每单位时间的交换数据量，识别交换数据的实际使用量，以及将所识别的交换数据的实际使用量与每单位时间内配置的交换数据量进行比较。

公开(公告)号：US20160018990A1

公开(公告)日：2016-01-21

申请号：US14799974

申请日：2015-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghwan YUN ,  Seijin KIM

IPC: G06F3/06 ,  G06F1/32

CPC classification number: G06F3/061 ,  G06F1/3293 ,  G06F3/0631 ,  G06F3/0655 ,  G06F3/0679 ,  G06F3/0685 ,  G06F13/1694 ,  G06F2206/1014

Abstract: A method for managing a memory of an electronic device is provided. The method includes the operations of analyzing data to be stored, determining a memory to store a part or all of the data based on a type of a first memory, a type of a second memory, and a preset policy, and storing a part or all of the data in the determined memory.

Abstract translation: 提供了一种用于管理电子设备的存储器的方法。 该方法包括分析要存储的数据的操作，基于第一存储器的类型，第二存储器的类型和预设策略来确定存储部分或全部数据的存储器，以及存储部分或 确定的内存中的所有数据。

公开(公告)号：US20150108657A1

公开(公告)日：2015-04-23

申请号：US14514955

申请日：2014-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seijin KIM

IPC: H01L23/522 ,  H01L23/00

CPC classification number: H01L24/16 ,  H01L23/147 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/5385 ,  H01L25/065 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/81815 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06548 ,  H01L2225/06562 ,  H01L2225/06572 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/37001 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A semiconductor device and electronic device comprising the same includes at least one dummy chip having at least one Through Silicon Via (TSV), and at least one active chip connected to the at least one dummy chip. The at least one active chip exchanges an electrical signal through the at least one TSV. The at least one active chip may be a memory chip and a non-memory chip in a vertically stacked (3D) configuration, connected through an electrical path that includes the TSV of the dummy chip. Embodiments may include multiple memory chips and dummy chips.

Abstract translation: 一种半导体器件和包括该半导体器件的电子器件包括至少一个具有至少一个硅通孔（TSV）的虚设芯片和至少一个连接至该至少一个虚设芯片的有源芯片。 所述至少一个有源芯片通过所述至少一个TSV交换电信号。 至少一个有源芯片可以是垂直（3D）配置的存储器芯片和非存储器芯片，其通过包括虚拟芯片的TSV的电路连接。 实施例可以包括多个存储器芯片和虚拟芯片。