公开(公告)号：US10553273B2

公开(公告)日：2020-02-04

申请号：US16032822

申请日：2018-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Woo Ryu ,  Kyungryun Kim ,  Soo Hwan Kim ,  Huikap Yang

IPC: G11C7/00 ,  G11C11/4091 ,  G11C7/06 ,  G11C7/18 ,  G11C8/08 ,  G11C11/4097 ,  G11C11/4093

Abstract: A semiconductor memory device includes a cell array that includes a first row block and a second row block, a bit line sense amplifier block that senses data stored in the first row block or the second row block, a local sense amplifier that latches the sensed data transferred from the bit line sense amplifier block, and a switch that connects the local sense amplifier with a selected one of a first global data line and a second global data line in response to a select signal. The second row block may be placed at an edge of the cell array, and the switch connects the local sense amplifier with the first global data line when the first row block is activated and connects the local sense amplifier with the second global data line when the second row block is activated.

公开(公告)号：US09940046B2

公开(公告)日：2018-04-10

申请号：US15278078

申请日：2016-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chankyung Kim ,  Mijo Kim ,  Yonggyu Chu ,  Seungbum Ko ,  Soo Hwan Kim

IPC: G06F3/06 ,  G11C11/16 ,  G11C11/4093 ,  G11C29/52 ,  G06F11/07

CPC classification number: G06F3/0619 ,  G06F3/0656 ,  G06F3/0659 ,  G06F3/0673 ,  G06F3/0679 ,  G06F11/0727 ,  G06F11/0751 ,  G06F11/079 ,  G06F11/0793 ,  G11C5/147 ,  G11C7/1063 ,  G11C7/1066 ,  G11C7/109 ,  G11C7/1093 ,  G11C7/16 ,  G11C7/20 ,  G11C7/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1693 ,  G11C11/4072 ,  G11C11/4074 ,  G11C11/4076 ,  G11C11/4093 ,  G11C29/52 ,  G11C2029/0409 ,  G11C2029/4402

Abstract: A semiconductor memory device which stores operation environment information such as use time data, operating temperature data, or operating voltage data includes an internal circuit configured to perform a function set in the semiconductor memory device, and an operation environment information storing circuit configured to sense information about an operation environment of the semiconductor memory device when the semiconductor memory device operates, store the operation environment information in non-volatile memory cells, and provide the operation environment information stored in the non-volatile memory cells to an outside based on a request of reading out information.